JP7781705B2 - プログラマブル直接描画装置のためのパターンデータ処理 - Google Patents

プログラマブル直接描画装置のためのパターンデータ処理

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Publication number
JP7781705B2
JP7781705B2 JP2022084484A JP2022084484A JP7781705B2 JP 7781705 B2 JP7781705 B2 JP 7781705B2 JP 2022084484 A JP2022084484 A JP 2022084484A JP 2022084484 A JP2022084484 A JP 2022084484A JP 7781705 B2 JP7781705 B2 JP 7781705B2
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JP
Japan
Prior art keywords
data
pattern
charged particle
writing
pattern data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022084484A
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English (en)
Japanese (ja)
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JP2022181200A (ja
JP2022181200A5 (https=
Inventor
プラッツグマー エルマー
シュペングラー クリストフ
ハーベルラー ミヒャエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IMS Nanofabrication GmbH
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IMS Nanofabrication GmbH
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Filing date
Publication date
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Publication of JP2022181200A publication Critical patent/JP2022181200A/ja
Publication of JP2022181200A5 publication Critical patent/JP2022181200A5/ja
Application granted granted Critical
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Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302Controlling tubes by external information, e.g. program control
    • H01J37/3023Program control
    • H01J37/3026Patterning strategy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31761Patterning strategy
    • H01J2237/31762Computer and memory organisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP2022084484A 2021-05-25 2022-05-24 プログラマブル直接描画装置のためのパターンデータ処理 Active JP7781705B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP21175588 2021-05-25
EP21175588.9 2021-05-25

Publications (3)

Publication Number Publication Date
JP2022181200A JP2022181200A (ja) 2022-12-07
JP2022181200A5 JP2022181200A5 (https=) 2024-12-20
JP7781705B2 true JP7781705B2 (ja) 2025-12-08

Family

ID=76098813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022084484A Active JP7781705B2 (ja) 2021-05-25 2022-05-24 プログラマブル直接描画装置のためのパターンデータ処理

Country Status (4)

Country Link
US (1) US12040157B2 (https=)
EP (1) EP4095882A1 (https=)
JP (1) JP7781705B2 (https=)
KR (1) KR20220159285A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
US12500060B2 (en) 2021-07-14 2025-12-16 Ims Nanofabrication Gmbh Electromagnetic lens
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

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