JP6439620B2 - 電子源のクリーニング方法及び電子ビーム描画装置 - Google Patents
電子源のクリーニング方法及び電子ビーム描画装置 Download PDFInfo
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- JP6439620B2 JP6439620B2 JP2015148735A JP2015148735A JP6439620B2 JP 6439620 B2 JP6439620 B2 JP 6439620B2 JP 2015148735 A JP2015148735 A JP 2015148735A JP 2015148735 A JP2015148735 A JP 2015148735A JP 6439620 B2 JP6439620 B2 JP 6439620B2
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- 238000010849 ion bombardment Methods 0.000 claims description 11
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- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electron Sources, Ion Sources (AREA)
Description
40 電子ビーム
58 電子銃制御部
60 電子銃室
62 カソード
64 電子源
66 電極
68 ウェネルト
69 アノード
70 ガス供給管
72 バルブ
74 ガス排気管
76 ポンプ
80 バイアス電圧電源
82 加速電圧電源
84 電流計
Claims (3)
- 電子ビーム描画装置の電子銃に設けられた電子源のクリーニング方法であって、
電子銃室内に不活性ガスを供給する工程と、
前記電子源から電子を放出して前記不活性ガスをイオン化し、生成されたイオンのイオン衝撃により前記電子源に付着した不純物を除去する工程と、
前記電子銃の電子ビーム放射特性の変化に基づいて前記不活性ガスの供給を停止する工程と、
を備え、
エミッション電流が一定となるように、前記電子銃のウェネルトに印加されるバイアス電圧を制御し、前記バイアス電圧の変動量が所定の基準値以下となった場合に前記不活性ガスの供給を停止することを特徴とする電子源のクリーニング方法。 - 電子源を含むカソードと、
接地されたアノードと、
前記カソードと前記アノードとの間に配置されたウェネルトと、
前記カソードと前記アノードとの間に加速電圧を印加する加速電圧電源と、
前記加速電圧電源の陰極と前記ウェネルトとの間に電気的に接続されるように配置され、前記ウェネルトにバイアス電圧を印加するバイアス電圧電源と、
エミッション電流を検出する電流計と、
電子銃室に不活性ガスを供給するガス供給部と、
前記電子源から電子を放出させて、前記ガス供給部から供給された前記不活性ガスをイオン化し、生成されたイオンのイオン衝撃により前記電子源に付着した不純物を除去すると共に、前記エミッション電流が一定となるように前記バイアス電圧を制御し、前記バイアス電圧の変動量が所定の基準値以下となった場合に前記不活性ガスの供給を停止する制御部と、
前記電子源から放出された電子を前記加速電圧により加速した電子ビームを用いて、試料にパターンを描画する描画部と、
を備える電子ビーム描画装置。 - 前記描画部は、前記電子ビームの照射を受けてマルチビームを形成する複数の開口部が形成されたアパーチャ部材を有することを特徴とする請求項2に記載の電子ビーム描画装置。
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JP2015148735A JP6439620B2 (ja) | 2015-07-28 | 2015-07-28 | 電子源のクリーニング方法及び電子ビーム描画装置 |
US15/211,124 US10134559B2 (en) | 2015-07-28 | 2016-07-15 | Method of cleaning electron source and electron beam writing apparatus |
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JP6439620B2 true JP6439620B2 (ja) | 2018-12-19 |
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Families Citing this family (10)
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JP6779847B2 (ja) * | 2017-09-11 | 2020-11-04 | 株式会社ニューフレアテクノロジー | 荷電粒子装置、荷電粒子描画装置および荷電粒子ビーム制御方法 |
US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
US10840054B2 (en) * | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
EP3518268B1 (en) * | 2018-01-30 | 2024-09-25 | IMS Nanofabrication GmbH | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
CN111266368B (zh) * | 2020-01-20 | 2020-09-22 | 哈尔滨工业大学 | 一种聚焦离子束清理透射电子显微镜光阑的方法 |
KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
US11380519B1 (en) * | 2020-11-05 | 2022-07-05 | Carl Zeiss Microscopy Gmbh | Operating a particle beam generator for a particle beam device |
EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
US11830699B2 (en) | 2021-07-06 | 2023-11-28 | Kla Corporation | Cold-field-emitter electron gun with self-cleaning extractor using reversed e-beam current |
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JPS598946B2 (ja) | 1979-03-30 | 1984-02-28 | 日本電子株式会社 | 電界放出型電子銃におけるクリ−ニング装置 |
JPH01132036A (ja) | 1987-11-18 | 1989-05-24 | Toshiba Corp | 電界放射形電子銃 |
JP3100209B2 (ja) * | 1991-12-20 | 2000-10-16 | 三菱重工業株式会社 | 真空蒸着用偏向電子銃装置 |
JP3730263B2 (ja) * | 1992-05-27 | 2005-12-21 | ケーエルエー・インストルメンツ・コーポレーション | 荷電粒子ビームを用いた自動基板検査の装置及び方法 |
JP3466744B2 (ja) * | 1993-12-29 | 2003-11-17 | 株式会社東芝 | 洗浄機能付き荷電ビーム装置および荷電ビーム装置の洗浄方法 |
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US20170032926A1 (en) | 2017-02-02 |
US10134559B2 (en) | 2018-11-20 |
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