DE3583423D1 - Verfahren zur erzeugung eines gewuenschten musters auf einem ziel mittels elektronenstrahlbelichtung desselben. - Google Patents

Verfahren zur erzeugung eines gewuenschten musters auf einem ziel mittels elektronenstrahlbelichtung desselben.

Info

Publication number
DE3583423D1
DE3583423D1 DE8585307196T DE3583423T DE3583423D1 DE 3583423 D1 DE3583423 D1 DE 3583423D1 DE 8585307196 T DE8585307196 T DE 8585307196T DE 3583423 T DE3583423 T DE 3583423T DE 3583423 D1 DE3583423 D1 DE 3583423D1
Authority
DE
Germany
Prior art keywords
target
generating
electron beam
desired pattern
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585307196T
Other languages
English (en)
Inventor
Mamoru C O Patent Div Nakasuji
Izumi Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Shibaura Machine Co Ltd
Original Assignee
Toshiba Corp
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21196584A external-priority patent/JPS6189630A/ja
Priority claimed from JP60194115A external-priority patent/JPH07111942B2/ja
Application filed by Toshiba Corp, Toshiba Machine Co Ltd filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3583423D1 publication Critical patent/DE3583423D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
DE8585307196T 1984-10-09 1985-10-08 Verfahren zur erzeugung eines gewuenschten musters auf einem ziel mittels elektronenstrahlbelichtung desselben. Expired - Lifetime DE3583423D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21196584A JPS6189630A (ja) 1984-10-09 1984-10-09 電子ビ−ム露光方法
JP60194115A JPH07111942B2 (ja) 1985-09-03 1985-09-03 電子ビ−ム露光方法

Publications (1)

Publication Number Publication Date
DE3583423D1 true DE3583423D1 (de) 1991-08-14

Family

ID=26508316

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585307196T Expired - Lifetime DE3583423D1 (de) 1984-10-09 1985-10-08 Verfahren zur erzeugung eines gewuenschten musters auf einem ziel mittels elektronenstrahlbelichtung desselben.

Country Status (3)

Country Link
US (1) US4743766A (de)
EP (1) EP0178156B1 (de)
DE (1) DE3583423D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63199421A (ja) * 1987-02-16 1988-08-17 Toshiba Corp 荷電ビ−ム描画方法
JP2614884B2 (ja) * 1988-02-04 1997-05-28 富士通株式会社 電子ビーム露光方法及びその装置
JP2834797B2 (ja) * 1989-10-25 1998-12-14 株式会社リコー 薄膜形成装置
DE4132068A1 (de) * 1991-09-26 1993-04-22 Raith Gmbh Optimierte lithographie fuer die integrierte optik
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
BE1007552A3 (nl) * 1993-09-27 1995-08-01 Philips Electronics Nv E-beam lithografie met achtergrondbelichting in naburig gebied.
US5532496A (en) * 1994-12-14 1996-07-02 International Business Machines Corporation Proximity effect compensation in scattering-mask lithographic projection systems and apparatus therefore
JP2004534360A (ja) * 2001-06-15 2004-11-11 株式会社荏原製作所 電子線装置及びその電子線装置を用いたデバイスの製造方法
US7053387B2 (en) * 2002-08-19 2006-05-30 Konica Corporation Pattern drawing method by scanning beam and pattern drawing apparatus
US7897008B2 (en) * 2006-10-27 2011-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for regional plasma control
US8387674B2 (en) 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder
JP5063320B2 (ja) * 2007-12-11 2012-10-31 株式会社ニューフレアテクノロジー 描画装置及び描画データの変換方法
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)
US9658538B2 (en) * 2014-12-19 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. System and technique for rasterizing circuit layout data
EP3070528B1 (de) * 2015-03-17 2017-11-01 IMS Nanofabrication AG Mehrstrahliges schreiben von musterbereichen relaxierter kritischer dimensionen
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (de) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bidirektionales mehrstrahliges schreiben mit doppeldurchgang
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (de) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Musterdatenverarbeitung für programmierbare direktschreibgeräte

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2755399A1 (de) * 1976-12-14 1978-06-22 Ernst Prof Dipl Phys Froeschle Elektronenstrahlbelichtungsverfahren mit kompensation des proximityeffekts
US4264711A (en) * 1979-12-10 1981-04-28 Burroughs Corporation Method of compensating for proximity effects in electron-beam lithography
US4463265A (en) * 1982-06-17 1984-07-31 Hewlett-Packard Company Electron beam proximity effect correction by reverse field pattern exposure

Also Published As

Publication number Publication date
EP0178156B1 (de) 1991-07-10
US4743766A (en) 1988-05-10
EP0178156A2 (de) 1986-04-16
EP0178156A3 (en) 1987-05-27

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Legal Events

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