DE3672024D1 - Verfahren zur herstellung von bildmustern mittels eines elektronenstrahls hoher stromdichte. - Google Patents

Verfahren zur herstellung von bildmustern mittels eines elektronenstrahls hoher stromdichte.

Info

Publication number
DE3672024D1
DE3672024D1 DE8686109388T DE3672024T DE3672024D1 DE 3672024 D1 DE3672024 D1 DE 3672024D1 DE 8686109388 T DE8686109388 T DE 8686109388T DE 3672024 T DE3672024 T DE 3672024T DE 3672024 D1 DE3672024 D1 DE 3672024D1
Authority
DE
Germany
Prior art keywords
electron beam
high current
image patterns
producing image
current electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686109388T
Other languages
English (en)
Inventor
Koichi Kobayashi
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3672024D1 publication Critical patent/DE3672024D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8686109388T 1985-07-09 1986-07-09 Verfahren zur herstellung von bildmustern mittels eines elektronenstrahls hoher stromdichte. Expired - Fee Related DE3672024D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60150473A JPH0628231B2 (ja) 1985-07-09 1985-07-09 電子ビ−ム露光方法

Publications (1)

Publication Number Publication Date
DE3672024D1 true DE3672024D1 (de) 1990-07-19

Family

ID=15497669

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686109388T Expired - Fee Related DE3672024D1 (de) 1985-07-09 1986-07-09 Verfahren zur herstellung von bildmustern mittels eines elektronenstrahls hoher stromdichte.

Country Status (5)

Country Link
US (1) US4735881A (de)
EP (1) EP0208308B1 (de)
JP (1) JPH0628231B2 (de)
KR (1) KR900001650B1 (de)
DE (1) DE3672024D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446649A (en) * 1992-12-31 1995-08-29 International Business Machines Corporation Data-hiding and skew scan for unioning of shapes in electron beam lithography post-processing
US5849437A (en) * 1994-03-25 1998-12-15 Fujitsu Limited Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
JP3512945B2 (ja) 1996-04-26 2004-03-31 株式会社東芝 パターン形成方法及びパターン形成装置
DE10126185B4 (de) * 2001-05-30 2007-07-19 Robert Bosch Gmbh Prüfkörper für optoelektronische Bildanalysesysteme
US7941780B2 (en) * 2008-04-18 2011-05-10 International Business Machines Corporation Intersect area based ground rule for semiconductor design
JP2011199279A (ja) * 2010-03-18 2011-10-06 Ims Nanofabrication Ag ターゲット上へのマルチビーム露光のための方法
EP2757571B1 (de) * 2013-01-17 2017-09-20 IMS Nanofabrication AG Hochspannungsisolationsvorrichtung für eine optische Vorrichtung mit geladenen Partikeln
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (de) 2013-07-25 2016-05-04 IMS Nanofabrication AG Verfahren zur Ladungsteilchen-Mehrstrahlbelichtung
EP2913838B1 (de) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Kompensation defekter Beamlets in einem Ladungsträger-Mehrstrahlbelichtungswerkzeug
US9443699B2 (en) 2014-04-25 2016-09-13 Ims Nanofabrication Ag Multi-beam tool for cutting patterns
EP2950325B1 (de) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Kompensation von dosisinhomogenität mittels überlappender belichtungsorte
JP6890373B2 (ja) 2014-07-10 2021-06-18 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (de) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bidirektionales mehrstrahliges schreiben mit doppeldurchgang
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4295048A (en) * 1980-04-28 1981-10-13 Cleland Marshall R Method and system for scanning a beam of charged particles to control irradiation dosage
EP0043863B1 (de) * 1980-07-10 1984-05-16 International Business Machines Corporation Verfahren zur Kompensation des Proximity Effekts bei Elektronenstrahl-Projektionsanlagen
JPS5776834A (en) * 1980-10-30 1982-05-14 Fujitsu Ltd Method of electron beam exposure
JPS5826169A (ja) * 1981-08-10 1983-02-16 日本鋼管株式会社 鋼製サイロの構築方法
JPS59121837A (ja) * 1982-12-22 1984-07-14 Fujitsu Ltd 電子ビ−ム露光方法
DE3370699D1 (en) * 1983-05-25 1987-05-07 Ibm Deutschland Process for pattern transfer onto a light-sensitive layer

Also Published As

Publication number Publication date
KR900001650B1 (ko) 1990-03-17
JPS6211229A (ja) 1987-01-20
US4735881A (en) 1988-04-05
JPH0628231B2 (ja) 1994-04-13
EP0208308A2 (de) 1987-01-14
EP0208308B1 (de) 1990-06-13
EP0208308A3 (en) 1988-09-07
KR870001647A (ko) 1987-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee