JP7516883B2 - 半導体装置、半導体モジュールおよび半導体装置の製造方法 - Google Patents

半導体装置、半導体モジュールおよび半導体装置の製造方法 Download PDF

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JP7516883B2
JP7516883B2 JP2020098220A JP2020098220A JP7516883B2 JP 7516883 B2 JP7516883 B2 JP 7516883B2 JP 2020098220 A JP2020098220 A JP 2020098220A JP 2020098220 A JP2020098220 A JP 2020098220A JP 7516883 B2 JP7516883 B2 JP 7516883B2
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semiconductor element
sealing material
semiconductor device
electrode pad
semiconductor
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JP2021190670A (ja
JP2021190670A5 (https=
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青吾 大澤
康嗣 大倉
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Denso Corp
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Denso Corp
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Priority to JP2020098220A priority Critical patent/JP7516883B2/ja
Priority to CN202180040056.8A priority patent/CN115699296B/zh
Priority to PCT/JP2021/019433 priority patent/WO2021246204A1/ja
Publication of JP2021190670A publication Critical patent/JP2021190670A/ja
Publication of JP2021190670A5 publication Critical patent/JP2021190670A5/ja
Priority to US18/059,748 priority patent/US12482714B2/en
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Publication of JP7516883B2 publication Critical patent/JP7516883B2/ja
Priority to US19/285,712 priority patent/US20250357230A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/041—Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H—ELECTRICITY
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
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    • H10W74/00—Encapsulations, e.g. protective coatings
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    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/652—Cross-sectional shapes
    • H10W70/6528—Cross-sectional shapes of the portions that connect to chips, wafers or package parts
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2020098220A 2020-06-05 2020-06-05 半導体装置、半導体モジュールおよび半導体装置の製造方法 Active JP7516883B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020098220A JP7516883B2 (ja) 2020-06-05 2020-06-05 半導体装置、半導体モジュールおよび半導体装置の製造方法
CN202180040056.8A CN115699296B (zh) 2020-06-05 2021-05-21 半导体装置、半导体模组及半导体装置的制造方法
PCT/JP2021/019433 WO2021246204A1 (ja) 2020-06-05 2021-05-21 半導体装置、半導体モジュールおよび半導体装置の製造方法
US18/059,748 US12482714B2 (en) 2020-06-05 2022-11-29 Semiconductor device, semiconductor module, and method for manufacturing semiconductor device
US19/285,712 US20250357230A1 (en) 2020-06-05 2025-07-30 Semiconductor device, semiconductor module, and method for manufacturing semiconductor device

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Application Number Priority Date Filing Date Title
JP2020098220A JP7516883B2 (ja) 2020-06-05 2020-06-05 半導体装置、半導体モジュールおよび半導体装置の製造方法

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JP2021190670A JP2021190670A (ja) 2021-12-13
JP2021190670A5 JP2021190670A5 (https=) 2022-05-19
JP7516883B2 true JP7516883B2 (ja) 2024-07-17

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US (2) US12482714B2 (https=)
JP (1) JP7516883B2 (https=)
CN (1) CN115699296B (https=)
WO (1) WO2021246204A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116982153A (zh) * 2021-03-17 2023-10-31 三菱电机株式会社 半导体装置以及半导体装置的制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287651A (ja) 2009-06-10 2010-12-24 Nissan Motor Co Ltd 半導体装置
JP2011181879A (ja) 2010-02-04 2011-09-15 Denso Corp 半導体装置およびその製造方法
JP2013172105A (ja) 2012-02-22 2013-09-02 Toyota Motor Corp 半導体モジュール
JP2014157927A (ja) 2013-02-15 2014-08-28 Denso Corp 半導体装置及びその製造方法
US20200176348A1 (en) 2018-11-30 2020-06-04 Delta Electronics Int'l (Singapore) Pte Ltd Package structure and power module using same
WO2020189508A1 (ja) 2019-03-19 2020-09-24 株式会社デンソー 半導体モジュールおよびこれに用いられる半導体装置

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US6306680B1 (en) 1999-02-22 2001-10-23 General Electric Company Power overlay chip scale packages for discrete power devices
JP2001007257A (ja) * 1999-06-24 2001-01-12 Matsushita Electronics Industry Corp 半導体装置および半導体装置の製造方法
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
JP2004349361A (ja) * 2003-05-21 2004-12-09 Casio Comput Co Ltd 半導体装置およびその製造方法
US8237259B2 (en) 2007-06-13 2012-08-07 Infineon Technologies Ag Embedded chip package
JP5437943B2 (ja) * 2010-07-26 2014-03-12 日立オートモティブシステムズ株式会社 パワー半導体ユニット、パワーモジュールおよびそれらの製造方法
CN102842556B (zh) * 2011-06-21 2015-04-22 万国半导体(开曼)股份有限公司 双面外露的半导体器件及其制作方法
JP6267102B2 (ja) * 2014-12-10 2018-01-24 トヨタ自動車株式会社 半導体装置および半導体装置の製造方法
JP6684996B2 (ja) * 2015-07-29 2020-04-22 パナソニックＩｐマネジメント株式会社 半導体装置
KR102008278B1 (ko) * 2017-12-07 2019-08-07 현대오트론 주식회사 파워칩 통합 모듈과 이의 제조 방법 및 양면 냉각형 파워 모듈 패키지
JP6925506B2 (ja) * 2018-03-14 2021-08-25 三菱電機株式会社 半導体パワーモジュールおよび電力変換装置
JP7190729B2 (ja) * 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP2020077857A (ja) * 2018-09-28 2020-05-21 太陽誘電株式会社 モジュールおよびその製造方法
JP7260278B2 (ja) 2018-10-19 2023-04-18 現代自動車株式会社 半導体サブアセンブリー及び半導体パワーモジュール
JP2020088107A (ja) * 2018-11-21 2020-06-04 トヨタ自動車株式会社 半導体モジュール
US12334408B2 (en) * 2020-03-19 2025-06-17 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
CN117836928A (zh) * 2021-08-18 2024-04-05 三菱电机株式会社 半导体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287651A (ja) 2009-06-10 2010-12-24 Nissan Motor Co Ltd 半導体装置
JP2011181879A (ja) 2010-02-04 2011-09-15 Denso Corp 半導体装置およびその製造方法
JP2013172105A (ja) 2012-02-22 2013-09-02 Toyota Motor Corp 半導体モジュール
JP2014157927A (ja) 2013-02-15 2014-08-28 Denso Corp 半導体装置及びその製造方法
US20200176348A1 (en) 2018-11-30 2020-06-04 Delta Electronics Int'l (Singapore) Pte Ltd Package structure and power module using same
WO2020189508A1 (ja) 2019-03-19 2020-09-24 株式会社デンソー 半導体モジュールおよびこれに用いられる半導体装置

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WO2021246204A1 (ja) 2021-12-09
JP2021190670A (ja) 2021-12-13
CN115699296A (zh) 2023-02-03
US20250357230A1 (en) 2025-11-20
CN115699296B (zh) 2026-04-21
US20230093554A1 (en) 2023-03-23
US12482714B2 (en) 2025-11-25

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