JP6684996B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6684996B2 JP6684996B2 JP2017530999A JP2017530999A JP6684996B2 JP 6684996 B2 JP6684996 B2 JP 6684996B2 JP 2017530999 A JP2017530999 A JP 2017530999A JP 2017530999 A JP2017530999 A JP 2017530999A JP 6684996 B2 JP6684996 B2 JP 6684996B2
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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- H01L23/495—Lead-frames or other flat leads
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- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- H01L2224/37001—Core members of the connector
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- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図1は本開示の実施の形態1における半導体装置の構成を示す側面図である。半導体装置11は、金属層14と半導体素子15とバスバー16とバスバー17とを有する。
次に本開示の実施の形態2について図3を用いて説明する。
次に本開示の実施の形態3について図4を用いて説明する。
2 絶縁層
3 ヒートシンク
4,5 絶縁体
7 半導体素子
6,8,16,17 バスバー
9,10 端部
11 半導体装置
12 放熱体
13 絶縁層
13C 上面
13D 下面
14 金属層
14C 実装面
15 半導体素子
15C 上面
15D 実装面
15J,16J,17J,17JJ,18J,19J 接合部
16A,17A 一端
16B,17B 他端
18,19,20 接続端子
21 出力部
22 基板
23 窒化物半導体層
24 水平バスバー
25 垂直バスバー
A,B 伝熱経路
Claims (5)
- 導電体である金属層と、
前記金属層の第1の面に実装される半導体素子と、
前記半導体素子に設けられた第1の接続端子と、
前記半導体素子に設けられた第2の接続端子と、
前記半導体素子に設けられた第3の接続端子と、
前記第1の接続端子に一端が接合された第1のバスバーと、
前記第1のバスバーの通電方向における断面積よりも大きな通電方向の断面積を有して前記第2の接続端子に一端が接合された第2のバスバーと、
を備え、
前記半導体素子の第1の面は前記金属層の前記第1の面と接合され、
前記第1の面とは反対面である前記半導体素子の第2の面に、前記第1の接続端子、前記第2の接続端子、および、前記第3の接続端子が配置され、
前記第1のバスバーの他端は外部のデバイスへ接続される出力部であり、
前記第2のバスバーの他端が前記金属層に接合され、
前記半導体素子の前記第1の面と前記第2のバスバーとは同電位である、
半導体装置。 - 前記金属層の第2の面に設けられた絶縁層と、
前記絶縁層に放熱体と、をさらに備え、
前記絶縁層の第1の面は金属層と接し、
前記絶縁層の第2の面は放熱体と接する、
請求項1に記載の半導体装置。 - 前記半導体素子は、窒化ガリウム系トランジスタで構成され、
前記第1の接続端子はドレイン端子であり、
前記第2の接続端子はソース端子であり、
前記第3の接続端子はゲート端子である、
請求項1に記載の半導体装置。 - 前記金属層は、配線パターンが形成されたリードフレームである、
請求項1に記載の半導体装置。 - 前記第2のバスバーは、それぞれが直線状に延伸する複数の導体が接続されて形成されている、
請求項1に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015149111 | 2015-07-29 | ||
JP2015149111 | 2015-07-29 | ||
PCT/JP2016/003180 WO2017017901A1 (ja) | 2015-07-29 | 2016-07-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017017901A1 JPWO2017017901A1 (ja) | 2018-04-05 |
JP6684996B2 true JP6684996B2 (ja) | 2020-04-22 |
Family
ID=57884239
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017530999A Active JP6684996B2 (ja) | 2015-07-29 | 2016-07-04 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10211144B2 (ja) |
EP (1) | EP3331006A4 (ja) |
JP (1) | JP6684996B2 (ja) |
CN (1) | CN107851631B (ja) |
WO (1) | WO2017017901A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112166652A (zh) * | 2018-05-29 | 2021-01-01 | 京瓷株式会社 | 电子元件搭载用基板、电子装置以及电子模块 |
DE112019005011T5 (de) * | 2018-10-02 | 2021-06-24 | Rohm Co., Ltd. | Halbleiterbauteil und verfahren zur herstellung eines halbleiterbauteils |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000156439A (ja) * | 1998-11-20 | 2000-06-06 | Mitsubishi Electric Corp | パワー半導体モジュール |
JP2001332664A (ja) * | 2000-05-24 | 2001-11-30 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
EP1388208B1 (en) | 2001-03-28 | 2007-01-10 | Koninklijke Philips Electronics N.V. | Synchronous rectifiers |
JP3850739B2 (ja) * | 2002-02-21 | 2006-11-29 | 三菱電機株式会社 | 半導体装置 |
DE10308095B3 (de) * | 2003-02-24 | 2004-10-14 | Infineon Technologies Ag | Elektronisches Bauteil mit mindestens einem Halbleiterchip auf einem Schaltungsträger und Verfahren zur Herstellung desselben |
JP4120581B2 (ja) * | 2003-12-24 | 2008-07-16 | 株式会社豊田中央研究所 | パワーモジュール |
JP5152619B2 (ja) | 2006-02-09 | 2013-02-27 | ダイヤモンド電機株式会社 | 半導体モジュール及びこれを備える半導体装置、並びに、半導体モジュールの製造方法 |
KR101469770B1 (ko) * | 2007-11-21 | 2014-12-09 | 페어차일드코리아반도체 주식회사 | 전력 소자 패키지 및 그 제조 방법 |
JP4634497B2 (ja) * | 2008-11-25 | 2011-02-16 | 三菱電機株式会社 | 電力用半導体モジュール |
JP2011129607A (ja) | 2009-12-16 | 2011-06-30 | Furukawa Electric Co Ltd:The | GaN系MOS型電界効果トランジスタ |
TWI425907B (zh) | 2010-09-21 | 2014-02-01 | Delta Electronics Inc | 電子元件和散熱裝置之組合結構及其絕緣元件 |
JP2012190936A (ja) * | 2011-03-09 | 2012-10-04 | Sharp Corp | 半導体装置のデバイス実装構造 |
US10211134B2 (en) * | 2011-09-30 | 2019-02-19 | Mediatek Inc. | Semiconductor package |
JP2013143519A (ja) * | 2012-01-12 | 2013-07-22 | Fuji Electric Co Ltd | 接続子および樹脂封止型半導体装置 |
CN202695428U (zh) * | 2012-06-18 | 2013-01-23 | 南京银茂微电子制造有限公司 | 一种igbt功率模块 |
US8722467B2 (en) * | 2012-06-30 | 2014-05-13 | Alpha & Omega Semiconductor, Inc. | Method of using bonding ball array as height keeper and paste holder in semiconductor device package |
JP2014086536A (ja) * | 2012-10-23 | 2014-05-12 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
TWI500135B (zh) * | 2012-12-10 | 2015-09-11 | Ind Tech Res Inst | 堆疊式功率元件模組 |
JP6211829B2 (ja) * | 2013-06-25 | 2017-10-11 | 株式会社東芝 | 半導体装置 |
US10128174B2 (en) * | 2015-07-24 | 2018-11-13 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9780019B2 (en) * | 2015-07-24 | 2017-10-03 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
-
2016
- 2016-07-04 WO PCT/JP2016/003180 patent/WO2017017901A1/ja active Application Filing
- 2016-07-04 JP JP2017530999A patent/JP6684996B2/ja active Active
- 2016-07-04 EP EP16830009.3A patent/EP3331006A4/en not_active Ceased
- 2016-07-04 CN CN201680041214.0A patent/CN107851631B/zh active Active
- 2016-07-04 US US15/580,457 patent/US10211144B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3331006A4 (en) | 2018-08-22 |
EP3331006A1 (en) | 2018-06-06 |
CN107851631A (zh) | 2018-03-27 |
US20180145020A1 (en) | 2018-05-24 |
CN107851631B (zh) | 2021-04-02 |
US10211144B2 (en) | 2019-02-19 |
WO2017017901A1 (ja) | 2017-02-02 |
JPWO2017017901A1 (ja) | 2018-04-05 |
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