JP2014022505A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2014022505A JP2014022505A JP2012158667A JP2012158667A JP2014022505A JP 2014022505 A JP2014022505 A JP 2014022505A JP 2012158667 A JP2012158667 A JP 2012158667A JP 2012158667 A JP2012158667 A JP 2012158667A JP 2014022505 A JP2014022505 A JP 2014022505A
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- film
- semiconductor device
- electrode pad
- bonding wire
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Abstract
【解決手段】再配線層W1を、半導体基板SB側から順に形成したCu膜C1、Ni膜N1およびPd膜P1により構成し、最上面のPd膜P1を電極パッドとして使用し、CuからなるボンディングワイヤBWをPd膜P1の上面に接続する。ここで、Pd膜P1の膜厚はNi膜N1よりも小さくし、Ni膜N1の膜厚はCu膜C1よりも小さくし、Cu膜C1、Ni膜N1およびPd膜P1は平面視において同一のパターン形状で形成する。
【選択図】図3
Description
C1、C2 Cu膜
CP 半導体チップ
CPa 半導体チップ
DP ダイパッド
LD リード
M1 電極パッド
MP ポリイミド層
MO モールド
N1〜N3 Ni膜
P1 Pd膜
PG ICパッケージ
PR1、PR2 フォトレジスト膜
PV パッシベーション膜
S1 第1シード膜
S2 第2シード膜
SB 半導体基板
SE シード膜
W1 再配線層
W2 再配線層
WP 電極パッド
Claims (10)
- 半導体基板上に形成されたCu膜と、
前記Cu膜の上面に接して形成されたNi膜と、
前記Ni膜の上面に接して形成された、前記Ni膜よりも膜厚が小さいPd膜と、
を有し、
前記Pd膜の上面にボンディングワイヤが直接接続されている、半導体装置。 - 前記Cu膜、前記Ni膜および前記Pd膜は、平面視において同一のパターン形状を有している、請求項1記載の半導体装置。
- 前記ボンディングワイヤはCuを含む、請求項1記載の半導体装置。
- 前記Ni膜は前記Cu膜よりも膜厚が小さい、請求項1記載の半導体装置。
- 前記半導体装置は樹脂により封止されている、請求項1記載の半導体装置。
- (a)電極パッドが上面に露出している半導体基板を用意する工程と、
(b)前記半導体基板上に露出した前記電極パッドの上面に接するシード膜を形成する工程と、
(c)前記シード膜上に、レジストパターンを形成する工程と、
(d)前記レジストパターンから露出する前記シード膜上に、めっき法を用いてCu膜、Ni膜およびPd膜を順に連続して形成する工程と、
(e)前記(d)工程の後、前記レジストパターンを除去する工程と、
(f)前記Pd膜の上面に、ボンディングワイヤを直接接続する工程と、
を有する、半導体装置の製造方法。 - 前記Pd膜は前記Ni膜よりも膜厚が小さい、請求項6記載の半導体装置の製造方法。
- 前記Cu膜、前記Ni膜および前記Pd膜は、平面視において同一のパターン形状を有している、請求項6記載の半導体装置の製造方法。
- 前記ボンディングワイヤはCuを含む、請求項6記載の半導体装置の製造方法。
- 前記Ni膜は前記Cu膜よりも膜厚が小さい、請求項6記載の半導体装置の製造方法。
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US13/924,938 US9343395B2 (en) | 2012-07-17 | 2013-06-24 | Semiconductor device and manufacturing method of same |
US15/139,825 US9704805B2 (en) | 2012-07-17 | 2016-04-27 | Semiconductor device and manufacturing method of same |
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Cited By (6)
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JP2016018976A (ja) * | 2014-07-11 | 2016-02-01 | ローム株式会社 | 電子装置 |
JP2016152328A (ja) * | 2015-02-18 | 2016-08-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2016219749A (ja) * | 2015-05-26 | 2016-12-22 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US9679858B2 (en) | 2015-08-26 | 2017-06-13 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing same |
JP2018061018A (ja) * | 2016-09-28 | 2018-04-12 | ローム株式会社 | 半導体装置 |
US11545454B2 (en) | 2016-09-28 | 2023-01-03 | Rohm Co., Ltd. | Semiconductor device |
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JP6238121B2 (ja) * | 2013-10-01 | 2017-11-29 | ローム株式会社 | 半導体装置 |
US10083924B2 (en) * | 2014-11-13 | 2018-09-25 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
IT201700061101A1 (it) * | 2017-06-05 | 2018-12-05 | St Microelectronics Srl | Dispositivo a semiconduttore e corrispondente metodo di fabbricazione di dispositivi a semiconduttore |
JP2019114575A (ja) * | 2017-12-20 | 2019-07-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
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US20160240484A1 (en) | 2016-08-18 |
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