JP7378910B2 - 両面露光装置及び両面露光方法 - Google Patents

両面露光装置及び両面露光方法 Download PDF

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Publication number
JP7378910B2
JP7378910B2 JP2017210649A JP2017210649A JP7378910B2 JP 7378910 B2 JP7378910 B2 JP 7378910B2 JP 2017210649 A JP2017210649 A JP 2017210649A JP 2017210649 A JP2017210649 A JP 2017210649A JP 7378910 B2 JP7378910 B2 JP 7378910B2
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Japan
Prior art keywords
substrate
alignment
board
camera
mask
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JP2017210649A
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English (en)
Japanese (ja)
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JP2019082610A (ja
JP2019082610A5 (enExample
Inventor
淳 名古屋
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Adtec Engineering Co Ltd
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Adtec Engineering Co Ltd
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Application filed by Adtec Engineering Co Ltd filed Critical Adtec Engineering Co Ltd
Priority to JP2017210649A priority Critical patent/JP7378910B2/ja
Priority to TW107138140A priority patent/TWI781240B/zh
Priority to KR1020180130944A priority patent/KR102671167B1/ko
Priority to CN202410085232.5A priority patent/CN117806133A/zh
Priority to CN201811283713.8A priority patent/CN109725500B/zh
Publication of JP2019082610A publication Critical patent/JP2019082610A/ja
Publication of JP2019082610A5 publication Critical patent/JP2019082610A5/ja
Priority to JP2022193810A priority patent/JP7389885B2/ja
Application granted granted Critical
Publication of JP7378910B2 publication Critical patent/JP7378910B2/ja
Priority to KR1020240068419A priority patent/KR102834815B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2017210649A 2017-10-31 2017-10-31 両面露光装置及び両面露光方法 Active JP7378910B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2017210649A JP7378910B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法
TW107138140A TWI781240B (zh) 2017-10-31 2018-10-29 兩面曝光裝置及兩面曝光方法
KR1020180130944A KR102671167B1 (ko) 2017-10-31 2018-10-30 양면 노광 장치 및 양면 노광 방법
CN201811283713.8A CN109725500B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
CN202410085232.5A CN117806133A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
JP2022193810A JP7389885B2 (ja) 2017-10-31 2022-12-02 両面露光装置及び両面露光方法
KR1020240068419A KR102834815B1 (ko) 2017-10-31 2024-05-27 양면 노광 장치 및 양면 노광 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017210649A JP7378910B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法

Related Child Applications (1)

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JP2022193810A Division JP7389885B2 (ja) 2017-10-31 2022-12-02 両面露光装置及び両面露光方法

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JP2019082610A JP2019082610A (ja) 2019-05-30
JP2019082610A5 JP2019082610A5 (enExample) 2020-09-17
JP7378910B2 true JP7378910B2 (ja) 2023-11-14

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JP2022193810A Active JP7389885B2 (ja) 2017-10-31 2022-12-02 両面露光装置及び両面露光方法

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JP (2) JP7378910B2 (enExample)
KR (2) KR102671167B1 (enExample)
CN (2) CN117806133A (enExample)
TW (1) TWI781240B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
TWI728410B (zh) 2019-07-18 2021-05-21 欣興電子股份有限公司 電路板結構及其製作方法
CN112291940A (zh) * 2019-07-24 2021-01-29 欣兴电子股份有限公司 电路板结构及其制作方法
JP2021033018A (ja) * 2019-08-22 2021-03-01 大日本印刷株式会社 露光方法及び露光方法を備える蒸着マスク製造方法並びに露光装置
CN111086906A (zh) * 2019-11-26 2020-05-01 矽电半导体设备(深圳)股份有限公司 分选膜放置芯粒的位置校正方法及芯粒分选方法
CN116068862A (zh) * 2022-11-21 2023-05-05 迪盛(武汉)微电子科技有限公司 一种曝光设备的拉料补偿方法、装置及存储介质
CN116360225B (zh) * 2023-03-17 2024-02-06 广东科视光学技术股份有限公司 一种双面pcb板曝光机及其在线自动对位装置
JP2025031076A (ja) * 2023-08-25 2025-03-07 キヤノントッキ株式会社 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2000305274A (ja) 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP2000347425A (ja) 1999-06-08 2000-12-15 Ushio Inc マスクを移動させて位置合わせを行う露光装置
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011227363A (ja) 2010-04-22 2011-11-10 Nitto Denko Corp アライメントマークの検出方法および配線回路基板の製造方法
JP2012243987A (ja) 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

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JP2880314B2 (ja) * 1991-03-26 1999-04-05 ウシオ電機株式会社 フィルム搬送機構およびこのフィルム搬送機構を具えた露光装置
JP2815724B2 (ja) * 1991-05-21 1998-10-27 ウシオ電機株式会社 フィルム露光装置におけるフィルムとレチクルの位置合わせ方法
JP2994991B2 (ja) * 1995-09-19 1999-12-27 ウシオ電機株式会社 マスクとワークの位置合わせ方法および装置
JP3201233B2 (ja) * 1995-10-20 2001-08-20 ウシオ電機株式会社 裏面にアライメント・マークが設けられたワークの投影露光方法
JPH1022201A (ja) * 1996-07-04 1998-01-23 Nikon Corp アライメントマーク検出装置
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JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP4250448B2 (ja) * 2003-04-25 2009-04-08 日立ビアメカニクス株式会社 両面露光方法
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JP6002898B2 (ja) * 2011-08-10 2016-10-05 株式会社ブイ・テクノロジー 露光装置用のアライメント装置
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000305274A (ja) 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP2000347425A (ja) 1999-06-08 2000-12-15 Ushio Inc マスクを移動させて位置合わせを行う露光装置
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011227363A (ja) 2010-04-22 2011-11-10 Nitto Denko Corp アライメントマークの検出方法および配線回路基板の製造方法
JP2012243987A (ja) 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2023014352A (ja) 2023-01-26
TW201935137A (zh) 2019-09-01
KR20240078646A (ko) 2024-06-04
KR102834815B1 (ko) 2025-07-17
KR20190049561A (ko) 2019-05-09
CN117806133A (zh) 2024-04-02
JP7389885B2 (ja) 2023-11-30
JP2019082610A (ja) 2019-05-30
TWI781240B (zh) 2022-10-21
KR102671167B1 (ko) 2024-05-31
CN109725500B (zh) 2024-01-19
CN109725500A (zh) 2019-05-07

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