KR102671167B1 - 양면 노광 장치 및 양면 노광 방법 - Google Patents

양면 노광 장치 및 양면 노광 방법 Download PDF

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Publication number
KR102671167B1
KR102671167B1 KR1020180130944A KR20180130944A KR102671167B1 KR 102671167 B1 KR102671167 B1 KR 102671167B1 KR 1020180130944 A KR1020180130944 A KR 1020180130944A KR 20180130944 A KR20180130944 A KR 20180130944A KR 102671167 B1 KR102671167 B1 KR 102671167B1
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South Korea
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substrate
alignment
camera
transfer
opening
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Korean (ko)
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KR20190049561A (ko
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준 나고야
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가부시키가이샤 아도텟쿠 엔지니아린구
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Priority to KR1020240068419A priority Critical patent/KR102834815B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020180130944A 2017-10-31 2018-10-30 양면 노광 장치 및 양면 노광 방법 Active KR102671167B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020240068419A KR102834815B1 (ko) 2017-10-31 2024-05-27 양면 노광 장치 및 양면 노광 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-210649 2017-10-31
JP2017210649A JP7378910B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法

Related Child Applications (1)

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KR1020240068419A Division KR102834815B1 (ko) 2017-10-31 2024-05-27 양면 노광 장치 및 양면 노광 방법

Publications (2)

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KR20190049561A KR20190049561A (ko) 2019-05-09
KR102671167B1 true KR102671167B1 (ko) 2024-05-31

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KR1020180130944A Active KR102671167B1 (ko) 2017-10-31 2018-10-30 양면 노광 장치 및 양면 노광 방법
KR1020240068419A Active KR102834815B1 (ko) 2017-10-31 2024-05-27 양면 노광 장치 및 양면 노광 방법

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JP (2) JP7378910B2 (enExample)
KR (2) KR102671167B1 (enExample)
CN (2) CN117806133A (enExample)
TW (1) TWI781240B (enExample)

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* Cited by examiner, † Cited by third party
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JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
TWI728410B (zh) 2019-07-18 2021-05-21 欣興電子股份有限公司 電路板結構及其製作方法
CN112291940A (zh) * 2019-07-24 2021-01-29 欣兴电子股份有限公司 电路板结构及其制作方法
JP2021033018A (ja) * 2019-08-22 2021-03-01 大日本印刷株式会社 露光方法及び露光方法を備える蒸着マスク製造方法並びに露光装置
CN111086906A (zh) * 2019-11-26 2020-05-01 矽电半导体设备(深圳)股份有限公司 分选膜放置芯粒的位置校正方法及芯粒分选方法
CN116068862A (zh) * 2022-11-21 2023-05-05 迪盛(武汉)微电子科技有限公司 一种曝光设备的拉料补偿方法、装置及存储介质
CN116360225B (zh) * 2023-03-17 2024-02-06 广东科视光学技术股份有限公司 一种双面pcb板曝光机及其在线自动对位装置
JP2025031076A (ja) * 2023-08-25 2025-03-07 キヤノントッキ株式会社 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
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JP2000305274A (ja) * 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP2007121425A (ja) * 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011227363A (ja) * 2010-04-22 2011-11-10 Nitto Denko Corp アライメントマークの検出方法および配線回路基板の製造方法
JP2012243987A (ja) * 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

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JP2815724B2 (ja) * 1991-05-21 1998-10-27 ウシオ電機株式会社 フィルム露光装置におけるフィルムとレチクルの位置合わせ方法
JP2994991B2 (ja) * 1995-09-19 1999-12-27 ウシオ電機株式会社 マスクとワークの位置合わせ方法および装置
JP3201233B2 (ja) * 1995-10-20 2001-08-20 ウシオ電機株式会社 裏面にアライメント・マークが設けられたワークの投影露光方法
JPH1022201A (ja) * 1996-07-04 1998-01-23 Nikon Corp アライメントマーク検出装置
JPH10163136A (ja) * 1996-12-04 1998-06-19 Unisia Jecs Corp シリコンウエハの加工方法
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP3376961B2 (ja) 1999-06-08 2003-02-17 ウシオ電機株式会社 マスクを移動させて位置合わせを行う露光装置
JP4250448B2 (ja) * 2003-04-25 2009-04-08 日立ビアメカニクス株式会社 両面露光方法
JP2004341279A (ja) * 2003-05-16 2004-12-02 Dainippon Printing Co Ltd カラーフィルタの製造装置、カラーフィルタの製造方法、及びカラーフィルタ
WO2006022205A1 (ja) * 2004-08-25 2006-03-02 Kabushiki Kaisha Toshiba 画像表示装置及びその製造方法
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JP5360571B2 (ja) * 2009-08-12 2013-12-04 株式会社ニコン 位置検査方法及び装置、露光方法及び装置、並びにインライン検査システム
TW201224678A (en) * 2010-11-04 2012-06-16 Orc Mfg Co Ltd Exposure device
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JP6002898B2 (ja) * 2011-08-10 2016-10-05 株式会社ブイ・テクノロジー 露光装置用のアライメント装置
JP6127834B2 (ja) * 2013-08-27 2017-05-17 トヨタ自動車株式会社 アライメント方法及びパターニング用マスク

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000305274A (ja) * 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP2007121425A (ja) * 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011227363A (ja) * 2010-04-22 2011-11-10 Nitto Denko Corp アライメントマークの検出方法および配線回路基板の製造方法
JP2012243987A (ja) * 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2023014352A (ja) 2023-01-26
TW201935137A (zh) 2019-09-01
KR20240078646A (ko) 2024-06-04
KR102834815B1 (ko) 2025-07-17
KR20190049561A (ko) 2019-05-09
CN117806133A (zh) 2024-04-02
JP7389885B2 (ja) 2023-11-30
JP2019082610A (ja) 2019-05-30
TWI781240B (zh) 2022-10-21
JP7378910B2 (ja) 2023-11-14
CN109725500B (zh) 2024-01-19
CN109725500A (zh) 2019-05-07

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