CN117806133A - 两面曝光装置及两面曝光方法 - Google Patents

两面曝光装置及两面曝光方法 Download PDF

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Publication number
CN117806133A
CN117806133A CN202410085232.5A CN202410085232A CN117806133A CN 117806133 A CN117806133 A CN 117806133A CN 202410085232 A CN202410085232 A CN 202410085232A CN 117806133 A CN117806133 A CN 117806133A
Authority
CN
China
Prior art keywords
substrate
calibration
opening
camera
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410085232.5A
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English (en)
Chinese (zh)
Inventor
名古屋淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aditech Engineering Co ltd
Original Assignee
Aditech Engineering Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aditech Engineering Co ltd filed Critical Aditech Engineering Co ltd
Publication of CN117806133A publication Critical patent/CN117806133A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202410085232.5A 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法 Pending CN117806133A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-210649 2017-10-31
JP2017210649A JP7378910B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法
CN201811283713.8A CN109725500B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201811283713.8A Division CN109725500B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

Publications (1)

Publication Number Publication Date
CN117806133A true CN117806133A (zh) 2024-04-02

Family

ID=66295470

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202410085232.5A Pending CN117806133A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
CN201811283713.8A Active CN109725500B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201811283713.8A Active CN109725500B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法

Country Status (4)

Country Link
JP (2) JP7378910B2 (enExample)
KR (2) KR102671167B1 (enExample)
CN (2) CN117806133A (enExample)
TW (1) TWI781240B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
TWI728410B (zh) 2019-07-18 2021-05-21 欣興電子股份有限公司 電路板結構及其製作方法
CN112291940A (zh) * 2019-07-24 2021-01-29 欣兴电子股份有限公司 电路板结构及其制作方法
JP2021033018A (ja) * 2019-08-22 2021-03-01 大日本印刷株式会社 露光方法及び露光方法を備える蒸着マスク製造方法並びに露光装置
CN111086906A (zh) * 2019-11-26 2020-05-01 矽电半导体设备(深圳)股份有限公司 分选膜放置芯粒的位置校正方法及芯粒分选方法
CN116068862A (zh) * 2022-11-21 2023-05-05 迪盛(武汉)微电子科技有限公司 一种曝光设备的拉料补偿方法、装置及存储介质
CN116360225B (zh) * 2023-03-17 2024-02-06 广东科视光学技术股份有限公司 一种双面pcb板曝光机及其在线自动对位装置
JP2025031076A (ja) * 2023-08-25 2025-03-07 キヤノントッキ株式会社 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法

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JP2815724B2 (ja) * 1991-05-21 1998-10-27 ウシオ電機株式会社 フィルム露光装置におけるフィルムとレチクルの位置合わせ方法
JP2994991B2 (ja) * 1995-09-19 1999-12-27 ウシオ電機株式会社 マスクとワークの位置合わせ方法および装置
JP3201233B2 (ja) * 1995-10-20 2001-08-20 ウシオ電機株式会社 裏面にアライメント・マークが設けられたワークの投影露光方法
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Also Published As

Publication number Publication date
JP2023014352A (ja) 2023-01-26
TW201935137A (zh) 2019-09-01
KR20240078646A (ko) 2024-06-04
KR102834815B1 (ko) 2025-07-17
KR20190049561A (ko) 2019-05-09
JP7389885B2 (ja) 2023-11-30
JP2019082610A (ja) 2019-05-30
TWI781240B (zh) 2022-10-21
KR102671167B1 (ko) 2024-05-31
JP7378910B2 (ja) 2023-11-14
CN109725500B (zh) 2024-01-19
CN109725500A (zh) 2019-05-07

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