JP7358079B2 - 撮像装置、撮像システムおよび半導体チップ - Google Patents

撮像装置、撮像システムおよび半導体チップ Download PDF

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Publication number
JP7358079B2
JP7358079B2 JP2019107924A JP2019107924A JP7358079B2 JP 7358079 B2 JP7358079 B2 JP 7358079B2 JP 2019107924 A JP2019107924 A JP 2019107924A JP 2019107924 A JP2019107924 A JP 2019107924A JP 7358079 B2 JP7358079 B2 JP 7358079B2
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transistor
analog
signal
circuit
imaging device
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JP2020202480A (ja
JP2020202480A5 (enExample
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洋史 戸塚
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Canon Inc
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Canon Inc
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Priority to JP2019107924A priority Critical patent/JP7358079B2/ja
Priority to US16/890,280 priority patent/US11405570B2/en
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Publication of JP2020202480A5 publication Critical patent/JP2020202480A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analogue/Digital Conversion (AREA)
  • Manipulation Of Pulses (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2019107924A 2019-06-10 2019-06-10 撮像装置、撮像システムおよび半導体チップ Active JP7358079B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019107924A JP7358079B2 (ja) 2019-06-10 2019-06-10 撮像装置、撮像システムおよび半導体チップ
US16/890,280 US11405570B2 (en) 2019-06-10 2020-06-02 Imaging device, imaging system, and semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019107924A JP7358079B2 (ja) 2019-06-10 2019-06-10 撮像装置、撮像システムおよび半導体チップ

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JP2020202480A JP2020202480A (ja) 2020-12-17
JP2020202480A5 JP2020202480A5 (enExample) 2022-06-16
JP7358079B2 true JP7358079B2 (ja) 2023-10-10

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US (1) US11405570B2 (enExample)
JP (1) JP7358079B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7328146B2 (ja) 2017-09-06 2023-08-16 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP6704944B2 (ja) * 2018-02-09 2020-06-03 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7603261B2 (ja) 2019-08-01 2024-12-20 パナソニックＩｐマネジメント株式会社 撮像装置および撮像装置の駆動方法
WO2021261229A1 (ja) * 2020-06-23 2021-12-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置、および電子機器
JP7822951B2 (ja) * 2020-11-12 2026-03-03 ソニーセミコンダクタソリューションズ株式会社 撮像装置
KR20220077735A (ko) * 2020-12-02 2022-06-09 삼성전자주식회사 이미지 센서 및 이미지 센서의 픽셀 어레이
JP7531390B2 (ja) * 2020-12-24 2024-08-09 ルネサスエレクトロニクス株式会社 固体撮像装置、ａｄ変換回路および電流補償回路
JP7277429B2 (ja) 2020-12-24 2023-05-19 キヤノン株式会社 光電変換装置、光電変換システム、移動体、半導体基板
JP7719615B2 (ja) * 2021-03-18 2025-08-06 キヤノン株式会社 光電変換装置および電子機器
JP7851099B2 (ja) * 2021-10-15 2026-04-24 キヤノン株式会社 撮像装置及びその制御方法
JP7838953B2 (ja) * 2021-12-17 2026-04-01 キヤノン株式会社 光電変換装置及び撮像システム
WO2023131993A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、移動体、半導体基板

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JP2010034616A (ja) 2008-07-24 2010-02-12 Panasonic Corp 固体撮像装置、カメラ
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WO2016194653A1 (ja) 2015-06-05 2016-12-08 ソニー株式会社 撮像素子、電子機器、並びに、製造装置および方法
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JP2018174493A (ja) 2017-03-31 2018-11-08 キヤノン株式会社 撮像装置、撮像システム、移動体

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JP4981623B2 (ja) 2007-11-01 2012-07-25 キヤノン株式会社 固体撮像装置とその駆動方法、カメラ及び複写機
JP5004775B2 (ja) 2007-12-04 2012-08-22 キヤノン株式会社 撮像装置及び撮像システム
JP5224942B2 (ja) 2008-06-30 2013-07-03 キヤノン株式会社 固体撮像装置
JP5374082B2 (ja) 2008-07-09 2013-12-25 キヤノン株式会社 撮像装置及び撮像システム
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JP6548391B2 (ja) 2014-03-31 2019-07-24 キヤノン株式会社 光電変換装置および撮像システム
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JP2018113637A (ja) * 2017-01-13 2018-07-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP7057635B2 (ja) 2017-08-15 2022-04-20 キヤノン株式会社 撮像装置、カメラおよび輸送機器
JP7046551B2 (ja) 2017-10-03 2022-04-04 キヤノン株式会社 固体撮像装置及び撮像システム
JP7286309B2 (ja) 2018-12-18 2023-06-05 キヤノン株式会社 光電変換装置、光電変換システムおよび信号処理装置

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JP2009124514A (ja) 2007-11-15 2009-06-04 Sony Corp 固体撮像素子、およびカメラシステム
JP2010034616A (ja) 2008-07-24 2010-02-12 Panasonic Corp 固体撮像装置、カメラ
JP2014519703A (ja) 2011-05-12 2014-08-14 オリーブ・メディカル・コーポレーション 垂直相互接続を用いたハイブリッド積層画像センサのためのサブ列パラレルデジタイザのシステムおよび方法
WO2016194653A1 (ja) 2015-06-05 2016-12-08 ソニー株式会社 撮像素子、電子機器、並びに、製造装置および方法
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JP2018174493A (ja) 2017-03-31 2018-11-08 キヤノン株式会社 撮像装置、撮像システム、移動体

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US11405570B2 (en) 2022-08-02
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