JP7295162B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7295162B2 JP7295162B2 JP2021094585A JP2021094585A JP7295162B2 JP 7295162 B2 JP7295162 B2 JP 7295162B2 JP 2021094585 A JP2021094585 A JP 2021094585A JP 2021094585 A JP2021094585 A JP 2021094585A JP 7295162 B2 JP7295162 B2 JP 7295162B2
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- 239000004065 semiconductor Substances 0.000 title claims description 172
- 239000000758 substrate Substances 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
特許文献1 特開2006-210547号公報
Claims (11)
- 半導体基板の上方に形成されゲート電圧が印加されるゲートパッドと、
前記半導体基板の上方に形成され、上面視において前記ゲートパッドを挟むように配置される第1パッド部および第2パッド部と、
前記半導体基板と、前記ゲートパッド、前記第1パッド部および前記第2パッド部との間に配置される絶縁膜と、
前記ゲートパッドの直下から前記第1パッド部の直下まで、第1方向に延びるポリシリコンを含んだ第1抵抗部と、
前記ゲートパッドの直下から前記第2パッド部の直下まで、第1方向とは反対側の第2方向に延びるポリシリコンを含んだ第2抵抗部と、
前記絶縁膜に設けられ、前記ゲートパッド、前記第1パッド部および前記第2パッド部を、前記第1抵抗部および前記第2抵抗部にそれぞれ接続するコンタクトホールと、
前記第1パッド部から前記第1方向に延びる金属配線である第1直線部と、
前記第2パッド部から前記第2方向に延びる金属配線である第2直線部と、
を備え、
前記第1パッド部は、前記第1直線部よりも幅が大きくなっており
前記第2パッド部は、前記第2直線部よりも幅が大きくなっている
半導体装置。 - 前記第2抵抗部は、前記第1抵抗部よりも抵抗値が大きい
請求項1に記載の半導体装置。 - 前記半導体基板は、第1導電型のドリフト領域と、
前記半導体基板の上面と前記ドリフト領域との間に形成された第2導電型のベース領域と、
前記半導体基板の上面と前記ベース領域との間に形成された第1導電型のエミッタ領域と、
前記半導体基板の上面から所定の深さまで形成されたゲートトレンチ部と
を有する請求項1または2に記載の半導体装置。 - 前記ゲートトレンチ部は、トレンチと、前記トレンチの内壁を覆うゲート絶縁膜と、ゲート絶縁膜に囲まれたゲート導電部
とを有する請求項3に記載の半導体装置。 - 前記ゲートトレンチ部は、前記第1方向および前記第2方向に平行に伸びる直線部分を含んでいる
請求項3または4に記載の半導体装置。 - 前記ゲートトレンチ部が伸びる方向において、前記エミッタ領域が離散的に配置されている
請求項5に記載の半導体装置。 - 前記ゲートトレンチ部の端部は、前記第1直線部または前記第2直線部とつながった金属配線と接続されている
請求項3から6のいずれか1項に記載の半導体装置。 - 前記半導体基板の上方に形成され、前記第1方向および前記第2方向に平行であって前記半導体基板の上面に垂直な断面において前記金属配線に挟まれているエミッタ電極と、
前記エミッタ電極の下方に形成されたバリアメタルと、
前記エミッタ電極を前記半導体基板に接続するコンタクトホールと、
前記コンタクトホール内に設けられるタングステンを含んだプラグと、
を更に備える請求項7に記載の半導体装置。 - 前記ゲートトレンチ部は、前記エミッタ領域に接している第1ゲートトレンチ部と、前記エミッタ領域に接していない第2ゲートトレンチ部と
を有する請求項3から8のいずれか1項に記載の半導体装置。 - 前記エミッタ領域は、前記第1ゲートトレンチ部の両側で、前記第1ゲートトレンチ部に接している
請求項9に記載の半導体装置。 - 前記半導体基板は、前記ゲートトレンチ部の端部を囲む第2導電型のウェル領域
を更に有する請求項3から10のいずれか1項に記載の半導体装置。
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JP2021094585A JP7295162B2 (ja) | 2017-01-17 | 2021-06-04 | 半導体装置 |
JP2023002721A JP7494953B2 (ja) | 2023-01-11 | 半導体モジュール |
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JP2017006254A JP6950186B2 (ja) | 2017-01-17 | 2017-01-17 | 半導体装置 |
JP2021094585A JP7295162B2 (ja) | 2017-01-17 | 2021-06-04 | 半導体装置 |
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JP6929804B2 (ja) * | 2017-09-20 | 2021-09-01 | 株式会社東芝 | 半導体装置 |
JP7484093B2 (ja) * | 2019-06-24 | 2024-05-16 | 富士電機株式会社 | 半導体装置 |
JP7248189B2 (ja) * | 2020-02-14 | 2023-03-29 | 富士電機株式会社 | 半導体回路装置 |
WO2021200543A1 (ja) * | 2020-03-30 | 2021-10-07 | 住友電気工業株式会社 | トランジスタおよび半導体装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3222355B2 (ja) | 1995-05-22 | 2001-10-29 | ダイハツ工業株式会社 | エアクリーナ |
JP3235368B2 (ja) | 1994-10-17 | 2001-12-04 | 富士ゼロックス株式会社 | レーザドップラー速度測定装置 |
WO2015050262A1 (ja) | 2013-10-04 | 2015-04-09 | 富士電機株式会社 | 半導体装置 |
JP2015213141A (ja) | 2014-04-17 | 2015-11-26 | 富士電機株式会社 | 縦型半導体装置およびその製造方法 |
JP2016058466A (ja) | 2014-09-08 | 2016-04-21 | 三菱電機株式会社 | 炭化珪素半導体装置 |
WO2016125490A1 (ja) | 2015-02-03 | 2016-08-11 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP2016201563A (ja) | 2016-07-26 | 2016-12-01 | ルネサスエレクトロニクス株式会社 | 狭アクティブセルie型トレンチゲートigbt |
JP2016219774A (ja) | 2015-05-15 | 2016-12-22 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3116356B2 (ja) * | 1990-01-26 | 2000-12-11 | ソニー株式会社 | 半導体装置 |
JPH03235368A (ja) * | 1990-02-10 | 1991-10-21 | Toshiba Corp | 半導体装置 |
JP3278496B2 (ja) * | 1993-06-14 | 2002-04-30 | 株式会社東芝 | 半導体装置およびその駆動方法 |
JP2001168333A (ja) | 1999-09-30 | 2001-06-22 | Toshiba Corp | トレンチゲート付き半導体装置 |
JP4706381B2 (ja) | 2004-10-22 | 2011-06-22 | 株式会社デンソー | 半導体装置 |
JP4857566B2 (ja) | 2005-01-27 | 2012-01-18 | 富士電機株式会社 | 絶縁ゲート型半導体装置とその製造方法 |
JP5251066B2 (ja) * | 2007-10-15 | 2013-07-31 | 富士電機株式会社 | 半導体装置 |
JP5439968B2 (ja) * | 2009-06-18 | 2014-03-12 | 富士電機株式会社 | 半導体装置 |
US8809911B2 (en) | 2010-11-30 | 2014-08-19 | Fuji Electric Co., Ltd. | Semiconductor device |
JP5609939B2 (ja) * | 2011-09-27 | 2014-10-22 | 株式会社デンソー | 半導体装置 |
JP5742672B2 (ja) * | 2011-11-02 | 2015-07-01 | 株式会社デンソー | 半導体装置 |
JP2013239697A (ja) * | 2012-04-16 | 2013-11-28 | Fuji Electric Co Ltd | 半導体装置 |
JP6064371B2 (ja) * | 2012-05-30 | 2017-01-25 | 株式会社デンソー | 半導体装置 |
DE102014119543B4 (de) * | 2014-12-23 | 2018-10-11 | Infineon Technologies Ag | Halbleitervorrichtung mit transistorzellen und anreicherungszellen sowie leistungsmodul |
DE102016117264B4 (de) * | 2016-09-14 | 2020-10-08 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Steuerbarkeit von dU/dt |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3235368B2 (ja) | 1994-10-17 | 2001-12-04 | 富士ゼロックス株式会社 | レーザドップラー速度測定装置 |
JP3222355B2 (ja) | 1995-05-22 | 2001-10-29 | ダイハツ工業株式会社 | エアクリーナ |
WO2015050262A1 (ja) | 2013-10-04 | 2015-04-09 | 富士電機株式会社 | 半導体装置 |
JP2015213141A (ja) | 2014-04-17 | 2015-11-26 | 富士電機株式会社 | 縦型半導体装置およびその製造方法 |
JP2016058466A (ja) | 2014-09-08 | 2016-04-21 | 三菱電機株式会社 | 炭化珪素半導体装置 |
WO2016125490A1 (ja) | 2015-02-03 | 2016-08-11 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP2016219774A (ja) | 2015-05-15 | 2016-12-22 | 富士電機株式会社 | 半導体装置 |
JP2016201563A (ja) | 2016-07-26 | 2016-12-01 | ルネサスエレクトロニクス株式会社 | 狭アクティブセルie型トレンチゲートigbt |
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JP2018117025A (ja) | 2018-07-26 |
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US20180204910A1 (en) | 2018-07-19 |
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