JP7279846B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7279846B2
JP7279846B2 JP2022501951A JP2022501951A JP7279846B2 JP 7279846 B2 JP7279846 B2 JP 7279846B2 JP 2022501951 A JP2022501951 A JP 2022501951A JP 2022501951 A JP2022501951 A JP 2022501951A JP 7279846 B2 JP7279846 B2 JP 7279846B2
Authority
JP
Japan
Prior art keywords
region
concentration
semiconductor substrate
oxygen
peak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022501951A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021166980A1 (https=
JPWO2021166980A5 (https=
Inventor
源宜 窪内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of JPWO2021166980A1 publication Critical patent/JPWO2021166980A1/ja
Publication of JPWO2021166980A5 publication Critical patent/JPWO2021166980A5/ja
Application granted granted Critical
Publication of JP7279846B2 publication Critical patent/JP7279846B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022501951A 2020-02-18 2021-02-17 半導体装置 Active JP7279846B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020025326 2020-02-18
JP2020025326 2020-02-18
PCT/JP2021/006016 WO2021166980A1 (ja) 2020-02-18 2021-02-17 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021166980A1 JPWO2021166980A1 (https=) 2021-08-26
JPWO2021166980A5 JPWO2021166980A5 (https=) 2022-04-19
JP7279846B2 true JP7279846B2 (ja) 2023-05-23

Family

ID=77392157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022501951A Active JP7279846B2 (ja) 2020-02-18 2021-02-17 半導体装置

Country Status (5)

Country Link
US (1) US12087827B2 (https=)
JP (1) JP7279846B2 (https=)
CN (1) CN114175270A (https=)
DE (1) DE112021000055T5 (https=)
WO (1) WO2021166980A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112022002851T5 (de) * 2022-02-17 2024-03-14 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren für dessen herstellung
JP7827170B2 (ja) * 2022-12-08 2026-03-10 富士電機株式会社 半導体装置および半導体装置の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222550A (ja) 2010-04-02 2011-11-04 Toyota Central R&D Labs Inc Ｐｉｎダイオード
JP2015090953A (ja) 2013-11-07 2015-05-11 富士電機株式会社 Ｍｏｓ型半導体装置の製造方法
WO2016204227A1 (ja) 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2017047276A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2018034250A1 (ja) 2016-08-19 2018-02-22 ローム株式会社 半導体装置および半導体装置の製造方法
WO2019117248A1 (ja) 2017-12-14 2019-06-20 富士電機株式会社 半導体装置
WO2019181852A1 (ja) 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4096722B2 (ja) 2002-12-06 2008-06-04 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
EP1979934B1 (de) 2006-01-20 2010-04-21 Infineon Technologies Austria AG Verfahren zur behandlung eines sauerstoff enthaltenden halbleiterwafers und halbleiterbauelement
JP5261927B2 (ja) * 2006-12-11 2013-08-14 パナソニック株式会社 半導体装置
JP2008177296A (ja) * 2007-01-17 2008-07-31 Toyota Central R&D Labs Inc 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法
DE102011113549B4 (de) 2011-09-15 2019-10-17 Infineon Technologies Ag Ein Halbleiterbauelement mit einer Feldstoppzone in einem Halbleiterkörper und ein Verfahren zur Herstellung einer Feldstoppzone in einem Halbleiterkörper
DE102013216195B4 (de) 2013-08-14 2015-10-29 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
US9312135B2 (en) 2014-03-19 2016-04-12 Infineon Technologies Ag Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects
DE102014114683B4 (de) 2014-10-09 2016-08-04 Infineon Technologies Ag Verfahren zur herstellung eines halbleiter-wafers mit einer niedrigen konzentration von interstitiellem sauerstoff
DE102014116666B4 (de) 2014-11-14 2022-04-21 Infineon Technologies Ag Ein Verfahren zum Bilden eines Halbleiterbauelements
JP6268117B2 (ja) 2015-03-27 2018-01-24 株式会社日立製作所 半導体装置およびその製造方法、並びに電力変換システム
DE102016112139B3 (de) 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
DE102016118012A1 (de) 2016-09-23 2018-03-29 Infineon Technologies Ag Halbleiterbauelement und Verfahren zum Bilden eines Halbleiterbauelements
JP6678549B2 (ja) 2016-09-27 2020-04-08 株式会社 日立パワーデバイス 半導体装置およびその製造方法、並びに電力変換システム
DE102016120771B3 (de) 2016-10-31 2018-03-08 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen und Halbleitervorrichtung, die wasserstoff-korrelierte Donatoren enthält
DE102017117753A1 (de) * 2017-08-04 2019-02-07 Infineon Technologies Austria Ag Verfahren zur herstellung von halbleitervorrichtungen mitsuperjunction-strukturen
DE112019001123B4 (de) 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222550A (ja) 2010-04-02 2011-11-04 Toyota Central R&D Labs Inc Ｐｉｎダイオード
JP2015090953A (ja) 2013-11-07 2015-05-11 富士電機株式会社 Ｍｏｓ型半導体装置の製造方法
WO2016204227A1 (ja) 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2017047276A1 (ja) 2015-09-16 2017-03-23 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2018034250A1 (ja) 2016-08-19 2018-02-22 ローム株式会社 半導体装置および半導体装置の製造方法
WO2019117248A1 (ja) 2017-12-14 2019-06-20 富士電機株式会社 半導体装置
WO2019181852A1 (ja) 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
DE112021000055T5 (de) 2022-06-30
US12087827B2 (en) 2024-09-10
WO2021166980A1 (ja) 2021-08-26
JPWO2021166980A1 (https=) 2021-08-26
CN114175270A (zh) 2022-03-11
US20220149159A1 (en) 2022-05-12

Similar Documents

Publication Publication Date Title
US11824095B2 (en) Semiconductor device and semiconductor device manufacturing method
US11742249B2 (en) Semiconductor device and fabrication method for semiconductor device
JP6989061B2 (ja) 半導体装置および製造方法
JP7476996B2 (ja) 半導体装置
JP7279846B2 (ja) 半導体装置
US12593478B2 (en) Semiconductor device
JP2023179647A (ja) 半導体装置および半導体装置の製造方法
JP7452632B2 (ja) 半導体装置および半導体装置の製造方法
JPWO2020217683A1 (ja) 半導体装置および製造方法
WO2023145805A1 (ja) 半導体装置および製造方法
JP7683287B2 (ja) 半導体装置および製造方法
JP2023119676A (ja) 半導体装置
JP2025184002A (ja) 半導体装置
CN119631592A (zh) 半导体装置
WO2021125147A1 (ja) 半導体装置および半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230411

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230424

R150 Certificate of patent or registration of utility model

Ref document number: 7279846

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150