JPWO2021166980A5 - - Google Patents
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- Publication number
- JPWO2021166980A5 JPWO2021166980A5 JP2022501951A JP2022501951A JPWO2021166980A5 JP WO2021166980 A5 JPWO2021166980 A5 JP WO2021166980A5 JP 2022501951 A JP2022501951 A JP 2022501951A JP 2022501951 A JP2022501951 A JP 2022501951A JP WO2021166980 A5 JPWO2021166980 A5 JP WO2021166980A5
- Authority
- JP
- Japan
- Prior art keywords
- type dopant
- semiconductor substrate
- injected
- annealing
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020025326 | 2020-02-18 | ||
| JP2020025326 | 2020-02-18 | ||
| PCT/JP2021/006016 WO2021166980A1 (ja) | 2020-02-18 | 2021-02-17 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021166980A1 JPWO2021166980A1 (https=) | 2021-08-26 |
| JPWO2021166980A5 true JPWO2021166980A5 (https=) | 2022-04-19 |
| JP7279846B2 JP7279846B2 (ja) | 2023-05-23 |
Family
ID=77392157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022501951A Active JP7279846B2 (ja) | 2020-02-18 | 2021-02-17 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12087827B2 (https=) |
| JP (1) | JP7279846B2 (https=) |
| CN (1) | CN114175270A (https=) |
| DE (1) | DE112021000055T5 (https=) |
| WO (1) | WO2021166980A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112022002851T5 (de) * | 2022-02-17 | 2024-03-14 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren für dessen herstellung |
| WO2024122541A1 (ja) * | 2022-12-08 | 2024-06-13 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4096722B2 (ja) | 2002-12-06 | 2008-06-04 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
| JP5104314B2 (ja) | 2005-11-14 | 2012-12-19 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| DE502007003501D1 (de) | 2006-01-20 | 2010-06-02 | Infineon Technologies Austria | Nden halbleiterwafers und halbleiterbauelement |
| JP5261927B2 (ja) * | 2006-12-11 | 2013-08-14 | パナソニック株式会社 | 半導体装置 |
| JP2008177296A (ja) * | 2007-01-17 | 2008-07-31 | Toyota Central R&D Labs Inc | 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法 |
| JP5523901B2 (ja) | 2010-04-02 | 2014-06-18 | 株式会社豊田中央研究所 | Ｐｉｎダイオード |
| DE102011113549B4 (de) | 2011-09-15 | 2019-10-17 | Infineon Technologies Ag | Ein Halbleiterbauelement mit einer Feldstoppzone in einem Halbleiterkörper und ein Verfahren zur Herstellung einer Feldstoppzone in einem Halbleiterkörper |
| DE102013216195B4 (de) | 2013-08-14 | 2015-10-29 | Infineon Technologies Ag | Verfahren zur Nachdotierung einer Halbleiterscheibe |
| JP6268948B2 (ja) | 2013-11-07 | 2018-01-31 | 富士電機株式会社 | Ｍｏｓ型半導体装置の製造方法 |
| US9312135B2 (en) | 2014-03-19 | 2016-04-12 | Infineon Technologies Ag | Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects |
| DE102014114683B4 (de) | 2014-10-09 | 2016-08-04 | Infineon Technologies Ag | Verfahren zur herstellung eines halbleiter-wafers mit einer niedrigen konzentration von interstitiellem sauerstoff |
| DE102014116666B4 (de) | 2014-11-14 | 2022-04-21 | Infineon Technologies Ag | Ein Verfahren zum Bilden eines Halbleiterbauelements |
| JP6268117B2 (ja) | 2015-03-27 | 2018-01-24 | 株式会社日立製作所 | 半導体装置およびその製造方法、並びに電力変換システム |
| WO2016204227A1 (ja) | 2015-06-17 | 2016-12-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6428945B2 (ja) | 2015-09-16 | 2018-11-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE102016112139B3 (de) | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
| US10923562B2 (en) | 2016-08-19 | 2021-02-16 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing semicondcutor device |
| DE102016118012A1 (de) | 2016-09-23 | 2018-03-29 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren zum Bilden eines Halbleiterbauelements |
| JP6678549B2 (ja) | 2016-09-27 | 2020-04-08 | 株式会社 日立パワーデバイス | 半導体装置およびその製造方法、並びに電力変換システム |
| DE102016120771B3 (de) | 2016-10-31 | 2018-03-08 | Infineon Technologies Ag | Verfahren zum Herstellen von Halbleitervorrichtungen und Halbleitervorrichtung, die wasserstoff-korrelierte Donatoren enthält |
| DE102017117753A1 (de) * | 2017-08-04 | 2019-02-07 | Infineon Technologies Austria Ag | Verfahren zur herstellung von halbleitervorrichtungen mitsuperjunction-strukturen |
| WO2019117248A1 (ja) * | 2017-12-14 | 2019-06-20 | 富士電機株式会社 | 半導体装置 |
| DE112019000094T5 (de) | 2018-03-19 | 2020-09-24 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung |
| DE112019008041B4 (de) | 2018-10-18 | 2026-02-05 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren davon |
-
2021
- 2021-02-17 JP JP2022501951A patent/JP7279846B2/ja active Active
- 2021-02-17 WO PCT/JP2021/006016 patent/WO2021166980A1/ja not_active Ceased
- 2021-02-17 DE DE112021000055.1T patent/DE112021000055T5/de active Pending
- 2021-02-17 CN CN202180004693.XA patent/CN114175270A/zh active Pending
-
2022
- 2022-01-23 US US17/581,973 patent/US12087827B2/en active Active
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