JP7233604B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP7233604B2
JP7233604B2 JP2022510662A JP2022510662A JP7233604B2 JP 7233604 B2 JP7233604 B2 JP 7233604B2 JP 2022510662 A JP2022510662 A JP 2022510662A JP 2022510662 A JP2022510662 A JP 2022510662A JP 7233604 B2 JP7233604 B2 JP 7233604B2
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Prior art keywords
solder
insulating substrate
semiconductor element
electrode plate
main terminal
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JP2022510662A
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Japanese (ja)
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JPWO2021193823A1 (https=
JPWO2021193823A5 (https=
Inventor
純司 藤野
道雄 小川
智香 川添
文雄 和田
悟 石川
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
JP2022510662A 2020-03-26 2021-03-25 半導体装置およびその製造方法 Active JP7233604B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020056429 2020-03-26
JP2020056429 2020-03-26
PCT/JP2021/012535 WO2021193823A1 (ja) 2020-03-26 2021-03-25 半導体装置およびその製造方法

Publications (3)

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JPWO2021193823A1 JPWO2021193823A1 (https=) 2021-09-30
JPWO2021193823A5 JPWO2021193823A5 (https=) 2022-09-21
JP7233604B2 true JP7233604B2 (ja) 2023-03-06

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US (1) US20230118890A1 (https=)
JP (1) JP7233604B2 (https=)
CN (1) CN115315805B (https=)
WO (1) WO2021193823A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202326927A (zh) 2021-10-15 2023-07-01 日商東京威力科創股份有限公司 基板處理裝置
CN114334920A (zh) * 2021-12-31 2022-04-12 佛山市国星光电股份有限公司 分立器件、功率模块和散热系统
CN115070157B (zh) * 2022-05-27 2024-06-04 浙江萃锦半导体有限公司 一种有利于改善热阻的底板结构
WO2024247052A1 (ja) * 2023-05-29 2024-12-05 三菱電機株式会社 電力変換装置およびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200865A (ja) 1999-01-06 2000-07-18 Shibafu Engineering Kk 絶縁基板及び半導体装置
JP2003209199A (ja) 2002-01-15 2003-07-25 Kyocera Corp 半導体素子搭載用基板
JP2012160548A (ja) 2011-01-31 2012-08-23 Toyota Central R&D Labs Inc 絶縁基板とその絶縁基板を有するパワーモジュール
JP2016115900A (ja) 2014-12-18 2016-06-23 三菱電機株式会社 半導体モジュールおよび半導体装置
WO2018146933A1 (ja) 2017-02-13 2018-08-16 富士電機株式会社 半導体装置及び半導体装置の製造方法

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JP3333409B2 (ja) * 1996-11-26 2002-10-15 株式会社日立製作所 半導体モジュール
JP2005347684A (ja) * 2004-06-07 2005-12-15 Nissan Motor Co Ltd 半導体装置
TWI246756B (en) * 2004-06-28 2006-01-01 Siliconware Precision Industries Co Ltd Semiconductor package having exposed heat sink and heat sink therein
JP4777681B2 (ja) * 2005-04-08 2011-09-21 Ｏｋｉセミコンダクタ株式会社 陽極接合装置、陽極接合方法及び加速度センサの製造方法
JP2007258435A (ja) * 2006-03-23 2007-10-04 Mitsubishi Electric Corp 半導体装置
JP2014011236A (ja) * 2012-06-28 2014-01-20 Honda Motor Co Ltd 半導体装置、並びに、半導体装置の製造装置及び製造方法
JP6124810B2 (ja) * 2014-01-16 2017-05-10 三菱電機株式会社 パワーモジュール
US10636723B2 (en) * 2014-08-06 2020-04-28 Denka Company Limited Heat dissipation component and method for manufacturing same
JP6356550B2 (ja) * 2014-09-10 2018-07-11 三菱電機株式会社 半導体装置およびその製造方法
JP6498566B2 (ja) * 2015-08-24 2019-04-10 京セラ株式会社 パワー半導体モジュール及びその製造方法
JP6462529B2 (ja) * 2015-08-24 2019-01-30 京セラ株式会社 パワー半導体モジュールの製造方法及びパワー半導体モジュール
CN110574159B (zh) * 2017-05-11 2023-04-04 三菱电机株式会社 功率模块、电力变换装置以及功率模块的制造方法
JP7047900B2 (ja) * 2018-04-06 2022-04-05 三菱電機株式会社 半導体装置および電力変換装置ならびに半導体装置の製造方法
JP2019054296A (ja) * 2019-01-10 2019-04-04 京セラ株式会社 パワー半導体モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200865A (ja) 1999-01-06 2000-07-18 Shibafu Engineering Kk 絶縁基板及び半導体装置
JP2003209199A (ja) 2002-01-15 2003-07-25 Kyocera Corp 半導体素子搭載用基板
JP2012160548A (ja) 2011-01-31 2012-08-23 Toyota Central R&D Labs Inc 絶縁基板とその絶縁基板を有するパワーモジュール
JP2016115900A (ja) 2014-12-18 2016-06-23 三菱電機株式会社 半導体モジュールおよび半導体装置
WO2018146933A1 (ja) 2017-02-13 2018-08-16 富士電機株式会社 半導体装置及び半導体装置の製造方法

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CN115315805B (zh) 2025-01-10
CN115315805A (zh) 2022-11-08
JPWO2021193823A1 (https=) 2021-09-30
WO2021193823A1 (ja) 2021-09-30
US20230118890A1 (en) 2023-04-20

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