JP7207859B2 - 3次元半導体メモリ装置及びその製造方法 - Google Patents
3次元半導体メモリ装置及びその製造方法 Download PDFInfo
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
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Description
110 下部絶縁パターン
111 第1連結半導体パターン
113 第2連結半導体パターン
120 バッファ絶縁膜
130 下部膜
140 第1層間絶縁膜
150 第2層間絶縁膜
CH チャンネルホール
CSP 共通ソースプラグ
CSR 共通ソース領域
EL 電極
IL 絶縁膜
PD 導電パッド
ST 積層構造体
VS 垂直構造体
Claims (7)
- 基板上に縦方向に交互に積層された絶縁膜及び電極を含む積層構造体と、
前記基板と前記積層構造体との間に介在された水平半導体パターンと、
前記積層構造体を貫通して前記水平半導体パターンに連結される複数の垂直半導体パターンと、
前記積層構造体の一側に提供される共通ソースプラグと、を含み、
前記積層構造体、前記水平半導体パターン、及び前記共通ソースプラグは、第1方向に延在され、
前記水平半導体パターンは、前記第1方向に延在される第1側壁を有し、
前記第1側壁は、前記共通ソースプラグに向かって突出された複数の突出部を有し、
前記水平半導体パターンは、前記第1側壁に対向する第2側壁を有し、
平面的な観点で、前記第2側壁は、前記第1方向に延在される直線形態を有する、
3次元半導体メモリ装置。 - 前記複数の垂直半導体パターンのうちの第1垂直半導体パターンは、前記複数の突出部のうちの第1突出部と隣接し、
平面的な観点で、前記第1突出部の第1地点と前記第1垂直半導体パターンの中心との間の距離は、第1長さであり、
平面的な観点で、前記第1突出部の第2地点と前記第1垂直半導体パターンの中心との間の距離は、第2長さであり、
前記第1長さと前記第2長さとは、互いに実質的に同一である、
請求項1に記載の3次元半導体メモリ装置。 - 前記複数の垂直半導体パターンのうちの第2垂直半導体パターンは、前記第1垂直半導体パターンと隣接し、
前記第1垂直半導体パターンの中心と前記第2垂直半導体パターンの中心との間の距離は、第3長さであり、
前記第3長さは、前記第1長さの2倍より小さい、
請求項2に記載の3次元半導体メモリ装置。 - 前記複数の垂直半導体パターンは、第1行及び第2行を構成し、
前記第1行は、前記第1方向に一列に配列された複数の第1の垂直半導体パターンを含み、前記第2行は、前記第1方向に一列に配列された複数の第2の垂直半導体パターンを含み、
前記第1行の前記複数の第1の垂直半導体パターンは、前記複数の突出部と各々隣接する、
請求項1乃至3のいずれか一項に記載の3次元半導体メモリ装置。 - 前記第1側壁は、前記複数の突出部の間で定義された複数の陥没部を有し、
前記複数の陥没部は、前記第2行の前記複数の第2の垂直半導体パターンに向かって各々延在される、
請求項4に記載の3次元半導体メモリ装置。 - 前記電極と前記複数の垂直半導体パターンとの間に複数のデータ格納要素が構成される、請求項1乃至5のいずれか一項に記載の3次元半導体メモリ装置。
- 前記水平半導体パターン及び前記複数の垂直半導体パターンは、同一である半導体物質を含む、請求項1乃至6のいずれか一項に記載の3次元半導体メモリ装置。
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KR1020170046229A KR102332346B1 (ko) | 2017-04-10 | 2017-04-10 | 3차원 반도체 메모리 장치 및 그의 제조 방법 |
KR10-2017-0046229 | 2017-04-10 |
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JP2018182320A JP2018182320A (ja) | 2018-11-15 |
JP2018182320A5 JP2018182320A5 (ja) | 2021-04-22 |
JP7207859B2 true JP7207859B2 (ja) | 2023-01-18 |
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US (1) | US10396088B2 (ja) |
JP (1) | JP7207859B2 (ja) |
KR (1) | KR102332346B1 (ja) |
CN (1) | CN108695339B (ja) |
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JP2020017572A (ja) * | 2018-07-23 | 2020-01-30 | キオクシア株式会社 | 半導体メモリ及び半導体メモリの製造方法 |
WO2020177048A1 (en) * | 2019-03-04 | 2020-09-10 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices |
WO2020177049A1 (en) | 2019-03-04 | 2020-09-10 | Yangtze Memory Technologies Co., Ltd. | Methods for forming three-dimensional memory devices |
KR20200124828A (ko) * | 2019-04-25 | 2020-11-04 | 삼성전자주식회사 | 수직형 반도체 소자 |
KR102644013B1 (ko) * | 2019-06-27 | 2024-03-05 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 신규 3d nand 메모리 디바이스 및 그 형성 방법 |
EP3966867A4 (en) * | 2020-01-17 | 2022-10-12 | Yangtze Memory Technologies Co., Ltd. | THREE-DIMENSIONAL STORAGE DEVICES AND METHOD OF MANUFACTURE THEREOF |
CN111223872B (zh) * | 2020-01-17 | 2023-04-07 | 长江存储科技有限责任公司 | 一种3d nand存储器及其制造方法 |
TWI743836B (zh) * | 2020-04-30 | 2021-10-21 | 大陸商長江存儲科技有限責任公司 | 立體記憶體元件及其製作方法 |
KR20210136455A (ko) * | 2020-05-07 | 2021-11-17 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
KR20210155266A (ko) * | 2020-06-15 | 2021-12-22 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
CN111785730B (zh) * | 2020-06-18 | 2021-06-08 | 长江存储科技有限责任公司 | 三维存储器及制备方法、电子设备 |
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