JP2018182320A - 3次元半導体メモリ装置及びその製造方法 - Google Patents
3次元半導体メモリ装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】 本発明は半導体装置及びその製造方法に係り、さらに詳細には、基板上に縦方向に交互に積層された絶縁膜及び電極を含む積層構造体と、前記基板と前記積層構造体との間に介在された水平半導体パターンと、前記積層構造体を貫通して前記水平半導体パターンに連結される垂直半導体パターンと、前記積層構造体の一側に提供される共通ソースプラグと、を含む。前記積層構造体、前記水平半導体パターン、及び前記共通ソースプラグは第1方向に延在され、前記水平半導体パターンは前記第1方向に延在される第1側壁を有し、前記第1側壁は前記共通ソースプラグに向かって突出された突出部を有する。
【選択図】 図3
Description
110 下部絶縁パターン
111 第1連結半導体パターン
113 第2連結半導体パターン
120 バッファ絶縁膜
130 下部膜
140 第1層間絶縁膜
150 第2層間絶縁膜
CH チャンネルホール
CSP 共通ソースプラグ
CSR 共通ソース領域
EL 電極
IL 絶縁膜
PD 導電パッド
ST 積層構造体
VS 垂直構造体
Claims (21)
- 基板上に縦方向に交互に積層された絶縁膜及び電極を含む積層構造体と、
前記基板と前記積層構造体との間に介在された水平半導体パターンと、
前記積層構造体を貫通して前記水平半導体パターンに連結される垂直半導体パターンと、
前記積層構造体の一側に提供される共通ソースプラグと、を含み、
前記積層構造体、前記水平半導体パターン、及び前記共通ソースプラグは、第1方向に延在され、
前記水平半導体パターンは、前記第1方向に延在される第1側壁を有し、
前記第1側壁は、前記共通ソースプラグに向かって突出された突出部を有する、
3次元半導体メモリ装置。 - 前記垂直半導体パターンのうちの第1垂直半導体パターンは、前記突出部のうちの第1突出部と隣接し、
平面的な観点で、前記第1突出部の第1地点と前記第1垂直半導体パターンの中心との間の距離は、第1長さであり、
平面的な観点で、前記第1突出部の第2地点と前記第1垂直半導体パターンの中心との間の距離は、第2長さであり、
前記第1長さと前記第2長さとは、互いに実質的に同一である、
請求項1に記載の3次元半導体メモリ装置。 - 前記垂直半導体パターンのうちの第2垂直半導体パターンは、前記第1垂直半導体パターンと隣接し、
前記第1垂直半導体パターンの中心と前記第2垂直半導体パターンの中心との間の距離は、第3長さであり、
前記第3長さは、前記第1長さの2倍より小さい、
請求項2に記載の3次元半導体メモリ装置。 - 平面的な観点で、前記第1垂直半導体パターンの中心と積層構造体の一側壁との間の最短距離は、第4長さであり、
前記第4長さは、前記第1長さより大きい、
請求項3に記載の3次元半導体メモリ装置。 - 前記垂直半導体パターンは、第1行及び第2行を構成し、
前記第1行及び前記第2行の各々は、前記第1方向に一列に配列された前記垂直半導体パターンを含み、
前記第1行の前記垂直半導体パターンは、前記突出部と各々隣接する、
請求項1乃至4のいずれか一項に記載の3次元半導体メモリ装置。 - 前記第1側壁は、前記突出部の間で定義された陥没部を有し、
前記陥没部は、前記第2行の前記垂直半導体パターンに向かって各々延在される、
請求項5に記載の3次元半導体メモリ装置。 - 前記水平半導体パターンは、前記第1側壁に対向する第2側壁を有し、
前記第2側壁は、突出部を有する、
請求項1乃至6のいずれか一項に記載の3次元半導体メモリ装置。 - 前記水平半導体パターンは、前記第1側壁に対向する第2側壁を有し、
平面的な観点で、前記第2側壁は、前記第1方向に延在される直線形態を有する、
請求項1乃至6のいずれか一項に記載の3次元半導体メモリ装置。 - 前記電極と前記垂直半導体パターンとの間にデータ格納要素が構成される、請求項1乃至8のいずれか一項に記載の3次元半導体メモリ装置。
- 前記水平半導体パターン及び前記垂直半導体パターンは、同一である半導体物質を含む、請求項1乃至9のいずれか一項に記載の3次元半導体メモリ装置。
- 前記基板と前記水平半導体パターンとの間に介在された連結半導体パターンをさらに含み、
前記連結半導体パターンは、前記水平半導体パターンを前記基板と電気的に連結し、
前記共通ソースプラグは、前記連結半導体パターンに接続され、
前記連結半導体パターンは、前記第1方向と交差する第2方向に延在される、
請求項1乃至10のいずれか一項に記載の3次元半導体メモリ装置。 - 基板上で第1方向に延在される積層構造体であり、互いに離隔されて縦方向に積層された電極を含む積層構造体と、
前記基板と前記積層構造体との間に介在され、前記第1方向に延在される水平半導体パターンと、
前記積層構造体を貫通して前記水平半導体パターンに連結される垂直半導体パターンと、を含み、
前記水平半導体パターンは、前記第1方向に延在される第1側壁を有し、
平面的な観点で、前記第1側壁は起伏形態を有する、
3次元半導体メモリ装置。 - 前記第1側壁は、前記第1方向と交差する第2方向に突出された突出部を有する、請求項12に記載の3次元半導体メモリ装置。
- 前記垂直半導体パターンは、第1行及び第2行を構成し、
前記第1行及び前記第2行の各々は、前記第1方向に一列に配列された前記垂直半導体パターンを含み、
前記第1行の前記垂直半導体パターンは、前記突出部と各々隣接する、
請求項13に記載の3次元半導体メモリ装置。 - 前記水平半導体パターンは、前記積層構造体と縦方向で重畳され、
前記水平半導体パターンの前記第1方向と交差する第2方向への最大幅は、前記積層構造体の前記第1方向と交差する第2方向への最大幅より小さい、
請求項12乃至14のいずれか一項に記載の3次元半導体メモリ装置。 - 前記積層構造体は、複数に提供されて、前記第1方向と交差する第2方向に沿って配列され、
前記3次元半導体メモリ装置は、前記積層構造体の間に介在された共通ソースプラグをさらに含む、
請求項12乃至15のいずれか一項に記載の3次元半導体メモリ装置。 - 基板上に下部膜を形成することと、
前記下部膜上に、縦方向に交互に積層された絶縁膜及び第1犠牲膜を含むモールド構造体を形成することと、
前記モールド構造体を貫通し、第1方向に沿って配列されるチャンネルホールを形成することと、
前記チャンネルホールを通じて前記下部膜を選択的にウェットエッチングして、リセス領域を形成することと、
前記チャンネルホール及び前記リセス領域を半導体物質で満たして、前記チャンネルホールを満たす垂直半導体パターン及び前記リセス領域を満たす水平半導体パターンを形成することと、を含み、
前記水平半導体パターンは、前記第1方向に延在される第1側壁を有し、
前記第1側壁は、前記第1方向と交差する第2方向に突出された突出部を有する、
3次元半導体メモリ装置の製造方法。 - 前記ウェットエッチングは、前記チャンネルホールの間の前記下部膜が全て除去される時まで遂行され、
前記リセス領域は、前記チャンネルホールと連通される、
請求項17に記載の3次元半導体メモリ装置の製造方法。 - 前記モールド構造体をパターニングして、第1方向に延在される垂直トレンチを形成することと、
前記垂直トレンチによって露出された第1犠牲膜を電極で置換することと、をさらに含み、
前記垂直トレンチの底は、前記水平半導体パターンの底面よりさらに低いように形成され、
前記垂直トレンチは、前記水平半導体パターンと離隔されるように形成される、
請求項17又は18に記載の3次元半導体メモリ装置の製造方法。 - 前記基板と前記下部膜との間に介在された第2犠牲膜を形成することと、
前記第2犠牲膜をパターニングして、前記第2方向に延在される犠牲パターンを形成することと、
前記垂直トレンチによって露出された前記犠牲パターンを選択的に除去して、空いた空間を形成することと、
前記空いた空間を満たす連結半導体パターンを形成することと、をさらに含む請求項19に記載の3次元半導体メモリ装置の製造方法。 - 前記下部膜上に不純物をドーピングして、前記第1方向に延在されるダミー不純物領域を形成することをさらに含み、
前記下部膜をエッチングする時、前記ダミー不純物領域は、エッチング停止膜として作用し、
前記水平半導体パターンは、前記第1側壁とは反対側の、前記ダミー不純物領域と対向する第2側壁を有し、
平面的な観点で、前記第2側壁は、前記第1方向に延在される直線形態を有する、
請求項17乃至20のいずれか一項に記載の3次元半導体メモリ装置の製造方法。
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