JP7079599B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP7079599B2
JP7079599B2 JP2017230694A JP2017230694A JP7079599B2 JP 7079599 B2 JP7079599 B2 JP 7079599B2 JP 2017230694 A JP2017230694 A JP 2017230694A JP 2017230694 A JP2017230694 A JP 2017230694A JP 7079599 B2 JP7079599 B2 JP 7079599B2
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JP
Japan
Prior art keywords
light emitting
emitting device
layer
conductive layer
reflective layer
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Active
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JP2017230694A
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English (en)
Japanese (ja)
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JP2018093197A5 (enExample
JP2018093197A (ja
Inventor
ライ，ルン－クアヌ
チョン，チン－タイ
レンヌ，イィ－ホア
シェ，ミヌ－シュン
リュウ，チュヌ－フン
リアオ，シィ－アヌ
シュ，ミン－チ
リアオ，ユ－チェヌ
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Epistar Corp
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Epistar Corp
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Publication of JP2018093197A5 publication Critical patent/JP2018093197A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0051—Diffusing sheet or layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
JP2017230694A 2016-12-01 2017-11-30 発光装置 Active JP7079599B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW105139601A TWI713239B (zh) 2016-12-01 2016-12-01 發光裝置
TW105139601 2016-12-01

Publications (3)

Publication Number Publication Date
JP2018093197A JP2018093197A (ja) 2018-06-14
JP2018093197A5 JP2018093197A5 (enExample) 2021-01-21
JP7079599B2 true JP7079599B2 (ja) 2022-06-02

Family

ID=62164214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017230694A Active JP7079599B2 (ja) 2016-12-01 2017-11-30 発光装置

Country Status (6)

Country Link
US (2) US10230033B2 (enExample)
JP (1) JP7079599B2 (enExample)
KR (1) KR102506250B1 (enExample)
CN (1) CN108133997B (enExample)
DE (1) DE102017128441B4 (enExample)
TW (1) TWI713239B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6576581B1 (ja) * 2018-03-29 2019-09-18 ルーメンス カンパニー リミテッド サイドビューｌｅｄパッケージ及びサイドビューｌｅｄモジュール
JP7193735B2 (ja) * 2018-09-26 2022-12-21 日亜化学工業株式会社 発光装置の製造方法及び発光装置
JP7186358B2 (ja) * 2018-11-15 2022-12-09 日亜化学工業株式会社 発光装置の製造方法、発光装置及び光源装置
JP6978697B2 (ja) 2018-11-15 2021-12-08 日亜化学工業株式会社 発光装置の製造方法
US11158774B2 (en) 2018-12-14 2021-10-26 Nichia Corporation Light-emitting device, light-emitting module, and method of manufacturing light-emitting device
JP7223938B2 (ja) * 2019-02-12 2023-02-17 日亜化学工業株式会社 発光装置の製造方法
JP7158647B2 (ja) * 2019-02-28 2022-10-24 日亜化学工業株式会社 発光装置の製造方法
JP7385111B2 (ja) * 2019-09-26 2023-11-22 日亜化学工業株式会社 発光装置の製造方法及び発光装置
TWI798573B (zh) 2020-08-05 2023-04-11 群光電能科技股份有限公司 發光鍵盤
US11894496B2 (en) * 2021-02-18 2024-02-06 Creeled, Inc. Solid-state light emitting device with improved color emission
JP7368749B2 (ja) * 2021-07-26 2023-10-25 日亜化学工業株式会社 発光装置の製造方法

Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2004039778A (ja) 2002-07-02 2004-02-05 Matsushita Electric Ind Co Ltd 照明用発光素子
JP2004146815A (ja) 2002-09-30 2004-05-20 Sanyo Electric Co Ltd 発光素子
JP2006156462A (ja) 2004-11-25 2006-06-15 Citizen Electronics Co Ltd 表面実装型発光ダイオード
JP2010021259A (ja) 2008-07-09 2010-01-28 Toshiba Corp 光半導体装置
US20120012880A1 (en) 2011-05-30 2012-01-19 Lee Gun Kyo Light emitting device module and lighting system including the same
JP2013201273A (ja) 2012-03-23 2013-10-03 Toshiba Corp 半導体発光素子及びその製造方法
WO2014087938A1 (ja) 2012-12-03 2014-06-12 シチズンホールディングス株式会社 Ｌｅｄモジュール
JP2016115729A (ja) 2014-12-11 2016-06-23 日亜化学工業株式会社 発光装置の製造法

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DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
US7718451B2 (en) * 2003-02-28 2010-05-18 Osram Opto Semiconductor Gmbh Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
US9000461B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
JP2008187030A (ja) * 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
CN102144307B (zh) 2008-07-03 2013-05-22 三星电子株式会社 发光二极管封装件和具有该发光二极管封装件的背光单元
TW201036504A (en) * 2009-03-18 2010-10-01 Everlight Electronics Co Ltd Photoelectric transmitting or receiving device and manufacturing method thereof
JP5936810B2 (ja) * 2009-09-11 2016-06-22 ローム株式会社 発光装置
JP5775002B2 (ja) * 2010-01-29 2015-09-09 シチズン電子株式会社 発光装置の製造方法
DE102010025320B4 (de) * 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US8901578B2 (en) * 2011-05-10 2014-12-02 Rohm Co., Ltd. LED module having LED chips as light source
JP2014067740A (ja) * 2012-09-24 2014-04-17 Stanley Electric Co Ltd 光半導体装置
DE102014110719A1 (de) 2014-07-29 2016-02-04 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements
KR102248642B1 (ko) * 2014-08-13 2021-05-06 엘지디스플레이 주식회사 엘이디 패키지
KR20160041108A (ko) * 2014-10-06 2016-04-18 삼성전자주식회사 반도체 발광장치
DE102014118349B4 (de) 2014-12-10 2023-07-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen
JP6444754B2 (ja) * 2015-02-05 2018-12-26 日亜化学工業株式会社 発光装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004039778A (ja) 2002-07-02 2004-02-05 Matsushita Electric Ind Co Ltd 照明用発光素子
JP2004146815A (ja) 2002-09-30 2004-05-20 Sanyo Electric Co Ltd 発光素子
JP2006156462A (ja) 2004-11-25 2006-06-15 Citizen Electronics Co Ltd 表面実装型発光ダイオード
JP2010021259A (ja) 2008-07-09 2010-01-28 Toshiba Corp 光半導体装置
US20120012880A1 (en) 2011-05-30 2012-01-19 Lee Gun Kyo Light emitting device module and lighting system including the same
JP2013201273A (ja) 2012-03-23 2013-10-03 Toshiba Corp 半導体発光素子及びその製造方法
WO2014087938A1 (ja) 2012-12-03 2014-06-12 シチズンホールディングス株式会社 Ｌｅｄモジュール
JP2016115729A (ja) 2014-12-11 2016-06-23 日亜化学工業株式会社 発光装置の製造法

Also Published As

Publication number Publication date
US10714666B2 (en) 2020-07-14
DE102017128441B4 (de) 2024-02-22
JP2018093197A (ja) 2018-06-14
TW201822383A (zh) 2018-06-16
US20180159004A1 (en) 2018-06-07
CN108133997B (zh) 2021-10-22
DE102017128441A1 (de) 2018-06-07
TWI713239B (zh) 2020-12-11
US20190207069A1 (en) 2019-07-04
US10230033B2 (en) 2019-03-12
KR20200067977A (ko) 2020-06-15
KR102506250B1 (ko) 2023-03-03
CN108133997A (zh) 2018-06-08

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