CN108133997B - 发光装置 - Google Patents

发光装置 Download PDF

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Publication number
CN108133997B
CN108133997B CN201711236835.7A CN201711236835A CN108133997B CN 108133997 B CN108133997 B CN 108133997B CN 201711236835 A CN201711236835 A CN 201711236835A CN 108133997 B CN108133997 B CN 108133997B
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China
Prior art keywords
light
layer
emitting device
light emitting
reflective layer
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CN201711236835.7A
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Chinese (zh)
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CN108133997A (zh
Inventor
赖隆宽
郑景太
任益华
谢明勋
刘俊宏
廖世安
许明祺
廖宇宸
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Fucai Optoelectronics Co., Ltd.
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0051—Diffusing sheet or layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
CN201711236835.7A 2016-12-01 2017-11-30 发光装置 Active CN108133997B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW105139601A TWI713239B (zh) 2016-12-01 2016-12-01 發光裝置
TW105139601 2016-12-01

Publications (2)

Publication Number Publication Date
CN108133997A CN108133997A (zh) 2018-06-08
CN108133997B true CN108133997B (zh) 2021-10-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711236835.7A Active CN108133997B (zh) 2016-12-01 2017-11-30 发光装置

Country Status (6)

Country Link
US (2) US10230033B2 (enExample)
JP (1) JP7079599B2 (enExample)
KR (1) KR102506250B1 (enExample)
CN (1) CN108133997B (enExample)
DE (1) DE102017128441B4 (enExample)
TW (1) TWI713239B (enExample)

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JP6576581B1 (ja) * 2018-03-29 2019-09-18 ルーメンス カンパニー リミテッド サイドビューｌｅｄパッケージ及びサイドビューｌｅｄモジュール
JP7193735B2 (ja) * 2018-09-26 2022-12-21 日亜化学工業株式会社 発光装置の製造方法及び発光装置
JP7186358B2 (ja) * 2018-11-15 2022-12-09 日亜化学工業株式会社 発光装置の製造方法、発光装置及び光源装置
JP6978697B2 (ja) 2018-11-15 2021-12-08 日亜化学工業株式会社 発光装置の製造方法
US11158774B2 (en) 2018-12-14 2021-10-26 Nichia Corporation Light-emitting device, light-emitting module, and method of manufacturing light-emitting device
JP7223938B2 (ja) * 2019-02-12 2023-02-17 日亜化学工業株式会社 発光装置の製造方法
JP7158647B2 (ja) * 2019-02-28 2022-10-24 日亜化学工業株式会社 発光装置の製造方法
JP7385111B2 (ja) * 2019-09-26 2023-11-22 日亜化学工業株式会社 発光装置の製造方法及び発光装置
TWI798573B (zh) 2020-08-05 2023-04-11 群光電能科技股份有限公司 發光鍵盤
US11894496B2 (en) * 2021-02-18 2024-02-06 Creeled, Inc. Solid-state light emitting device with improved color emission
JP7368749B2 (ja) * 2021-07-26 2023-10-25 日亜化学工業株式会社 発光装置の製造方法

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JP2004039778A (ja) * 2002-07-02 2004-02-05 Matsushita Electric Ind Co Ltd 照明用発光素子
JP2004146815A (ja) * 2002-09-30 2004-05-20 Sanyo Electric Co Ltd 発光素子
US7718451B2 (en) * 2003-02-28 2010-05-18 Osram Opto Semiconductor Gmbh Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
US9000461B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
JP4673610B2 (ja) * 2004-11-25 2011-04-20 シチズン電子株式会社 表面実装型発光ダイオード
JP2008187030A (ja) * 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
CN102144307B (zh) 2008-07-03 2013-05-22 三星电子株式会社 发光二极管封装件和具有该发光二极管封装件的背光单元
JP2010021259A (ja) * 2008-07-09 2010-01-28 Toshiba Corp 光半導体装置
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JP5936810B2 (ja) * 2009-09-11 2016-06-22 ローム株式会社 発光装置
JP5775002B2 (ja) * 2010-01-29 2015-09-09 シチズン電子株式会社 発光装置の製造方法
DE102010025320B4 (de) * 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
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KR101785645B1 (ko) * 2011-05-30 2017-10-16 엘지이노텍 주식회사 발광소자 모듈 및 이를 포함하는 조명 시스템
JP5684751B2 (ja) * 2012-03-23 2015-03-18 株式会社東芝 半導体発光素子及びその製造方法
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DE102014118349B4 (de) 2014-12-10 2023-07-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen
JP6515515B2 (ja) * 2014-12-11 2019-05-22 日亜化学工業株式会社 発光装置の製造法
JP6444754B2 (ja) * 2015-02-05 2018-12-26 日亜化学工業株式会社 発光装置

Also Published As

Publication number Publication date
US10714666B2 (en) 2020-07-14
DE102017128441B4 (de) 2024-02-22
JP2018093197A (ja) 2018-06-14
TW201822383A (zh) 2018-06-16
US20180159004A1 (en) 2018-06-07
DE102017128441A1 (de) 2018-06-07
TWI713239B (zh) 2020-12-11
US20190207069A1 (en) 2019-07-04
US10230033B2 (en) 2019-03-12
KR20200067977A (ko) 2020-06-15
KR102506250B1 (ko) 2023-03-03
CN108133997A (zh) 2018-06-08
JP7079599B2 (ja) 2022-06-02

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Address after: Hsinchu City, Taiwan, China

Patentee after: Fucai Optoelectronics Co., Ltd.

Country or region after: Taiwan, China

Address before: Hsinchu City, Taiwan, China

Patentee before: EPISTAR Corp.

Country or region before: Taiwan, China