DE102017128441B4 - Lichtemittierende Vorrichtung - Google Patents

Lichtemittierende Vorrichtung Download PDF

Info

Publication number
DE102017128441B4
DE102017128441B4 DE102017128441.9A DE102017128441A DE102017128441B4 DE 102017128441 B4 DE102017128441 B4 DE 102017128441B4 DE 102017128441 A DE102017128441 A DE 102017128441A DE 102017128441 B4 DE102017128441 B4 DE 102017128441B4
Authority
DE
Germany
Prior art keywords
layer
light
light emitting
emitting device
wavelength conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102017128441.9A
Other languages
German (de)
English (en)
Other versions
DE102017128441A1 (de
Inventor
Lung-Kuan Lai
Ching-Tai Cheng
Yih-Hua Renn
Min-Hsun Hsieh
Chun-Hung Liu
Shih-An LIAO
Ming-Chi Hsu
Yu-Chen Liao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of DE102017128441A1 publication Critical patent/DE102017128441A1/de
Application granted granted Critical
Publication of DE102017128441B4 publication Critical patent/DE102017128441B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073Light emitting diode [LED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/814Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8314Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033Means for improving the coupling-out of light from the light guide
    • G02B6/005Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0051Diffusing sheet or layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/032Manufacture or treatment of electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/034Manufacture or treatment of coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
DE102017128441.9A 2016-12-01 2017-11-30 Lichtemittierende Vorrichtung Active DE102017128441B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW105139601A TWI713239B (zh) 2016-12-01 2016-12-01 發光裝置
TW105139601 2016-12-01

Publications (2)

Publication Number Publication Date
DE102017128441A1 DE102017128441A1 (de) 2018-06-07
DE102017128441B4 true DE102017128441B4 (de) 2024-02-22

Family

ID=62164214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102017128441.9A Active DE102017128441B4 (de) 2016-12-01 2017-11-30 Lichtemittierende Vorrichtung

Country Status (6)

Country Link
US (2) US10230033B2 (enExample)
JP (1) JP7079599B2 (enExample)
KR (1) KR102506250B1 (enExample)
CN (1) CN108133997B (enExample)
DE (1) DE102017128441B4 (enExample)
TW (1) TWI713239B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6576581B1 (ja) * 2018-03-29 2019-09-18 ルーメンス カンパニー リミテッド サイドビューledパッケージ及びサイドビューledモジュール
JP7193735B2 (ja) * 2018-09-26 2022-12-21 日亜化学工業株式会社 発光装置の製造方法及び発光装置
JP6978697B2 (ja) 2018-11-15 2021-12-08 日亜化学工業株式会社 発光装置の製造方法
JP7186358B2 (ja) * 2018-11-15 2022-12-09 日亜化学工業株式会社 発光装置の製造方法、発光装置及び光源装置
US11158774B2 (en) 2018-12-14 2021-10-26 Nichia Corporation Light-emitting device, light-emitting module, and method of manufacturing light-emitting device
JP7223938B2 (ja) * 2019-02-12 2023-02-17 日亜化学工業株式会社 発光装置の製造方法
JP7158647B2 (ja) * 2019-02-28 2022-10-24 日亜化学工業株式会社 発光装置の製造方法
JP7385111B2 (ja) * 2019-09-26 2023-11-22 日亜化学工業株式会社 発光装置の製造方法及び発光装置
TWI798573B (zh) 2020-08-05 2023-04-11 群光電能科技股份有限公司 發光鍵盤
US11894496B2 (en) 2021-02-18 2024-02-06 Creeled, Inc. Solid-state light emitting device with improved color emission
JP7368749B2 (ja) * 2021-07-26 2023-10-25 日亜化学工業株式会社 発光装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110062473A1 (en) 2009-09-11 2011-03-17 Rohm Co., Ltd. Light emitting device
US20120286301A1 (en) 2011-05-10 2012-11-15 Rohm Co., Ltd. Led module
DE102014110719A1 (de) 2014-07-29 2016-02-04 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements
DE102014118349A1 (de) 2014-12-10 2016-06-16 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP2004039778A (ja) 2002-07-02 2004-02-05 Matsushita Electric Ind Co Ltd 照明用発光素子
JP2004146815A (ja) 2002-09-30 2004-05-20 Sanyo Electric Co Ltd 発光素子
US7718451B2 (en) * 2003-02-28 2010-05-18 Osram Opto Semiconductor Gmbh Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body
US9000461B2 (en) 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic element and manufacturing method thereof
JP4673610B2 (ja) 2004-11-25 2011-04-20 シチズン電子株式会社 表面実装型発光ダイオード
JP2008187030A (ja) * 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
US9022632B2 (en) 2008-07-03 2015-05-05 Samsung Electronics Co., Ltd. LED package and a backlight unit unit comprising said LED package
JP2010021259A (ja) 2008-07-09 2010-01-28 Toshiba Corp 光半導体装置
TW201036504A (en) * 2009-03-18 2010-10-01 Everlight Electronics Co Ltd Photoelectric transmitting or receiving device and manufacturing method thereof
DE112011100376B4 (de) 2010-01-29 2024-06-27 Citizen Electronics Co., Ltd. Verfahren zur herstellung einer licht aussendenden vorrichtung
DE102010025320B4 (de) 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR101785645B1 (ko) 2011-05-30 2017-10-16 엘지이노텍 주식회사 발광소자 모듈 및 이를 포함하는 조명 시스템
JP5684751B2 (ja) 2012-03-23 2015-03-18 株式会社東芝 半導体発光素子及びその製造方法
JP2014067740A (ja) 2012-09-24 2014-04-17 Stanley Electric Co Ltd 光半導体装置
US9810381B2 (en) 2012-12-03 2017-11-07 Citizen Watch Co., Ltd. LED module
KR102248642B1 (ko) * 2014-08-13 2021-05-06 엘지디스플레이 주식회사 엘이디 패키지
KR20160041108A (ko) * 2014-10-06 2016-04-18 삼성전자주식회사 반도체 발광장치
JP6515515B2 (ja) 2014-12-11 2019-05-22 日亜化学工業株式会社 発光装置の製造法
JP6444754B2 (ja) * 2015-02-05 2018-12-26 日亜化学工業株式会社 発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110062473A1 (en) 2009-09-11 2011-03-17 Rohm Co., Ltd. Light emitting device
US20120286301A1 (en) 2011-05-10 2012-11-15 Rohm Co., Ltd. Led module
DE102014110719A1 (de) 2014-07-29 2016-02-04 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements
DE102014118349A1 (de) 2014-12-10 2016-06-16 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen

Also Published As

Publication number Publication date
CN108133997A (zh) 2018-06-08
US20180159004A1 (en) 2018-06-07
KR20200067977A (ko) 2020-06-15
JP7079599B2 (ja) 2022-06-02
JP2018093197A (ja) 2018-06-14
US20190207069A1 (en) 2019-07-04
KR102506250B1 (ko) 2023-03-03
US10230033B2 (en) 2019-03-12
CN108133997B (zh) 2021-10-22
US10714666B2 (en) 2020-07-14
DE102017128441A1 (de) 2018-06-07
TW201822383A (zh) 2018-06-16
TWI713239B (zh) 2020-12-11

Similar Documents

Publication Publication Date Title
DE102017128441B4 (de) Lichtemittierende Vorrichtung
DE102019112546B4 (de) Herstellungsverfahren für eine lichtemittierende Vorrichtung
DE102014016854B4 (de) Lichtemittierende Vorrichtung und Verfahren zur Herstellung derselben
DE112015006061B4 (de) Lichtemittierende Vorrichtung
DE112011103186T5 (de) Lichtemittierende Diodeneinheit auf Waferebene und Verfahren zu ihrer Herstellung
DE102017102112A1 (de) Lichtemittierendes Element und sein Herstellungsverfahren
DE202018004818U1 (de) Fahrzeugleuchte unter Verwendung eines lichtabstrahlenden Halbleiterbauelements
DE102016109308B4 (de) Strahlungsemittierendes bauelement
DE102012216738A1 (de) Optoelektronisches bauelement
DE102019104268A1 (de) Lichtemittierende Vorrichtung und Herstellungsverfahren dafür
DE102023133332A1 (de) Lichtemittierende vorrichtung
DE102017111706A1 (de) Lichtemissionsvorrichtung
DE202018006380U1 (de) Leuchtdiode, LED Modul und Anzeigevorrichtung damit
DE202018006506U1 (de) Lichtemittierende Vorrichtung und lichtemittierendes Modul mit dieser Vorrichtung
DE102021131630A1 (de) Anzeigevorrichtung und verfahren zu ihrer herstellung
DE102017104144B4 (de) Verfahren zur Herstellung von Leuchtdioden
DE102005040522B4 (de) Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines solchen
DE112018006755B4 (de) Eine Fahrzeuglampe, die eine lichtemittierende Halbleitervorrichtung verwendet
DE102006034151A1 (de) Lichtemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung
DE102020130211A1 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauteils
WO2017194620A1 (de) Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
DE102017129623B4 (de) Licht emittierendes Halbleiterbauelement
DE102023124651A1 (de) Lichtemmissionsvorrichtung, anzeigeeinrichtung mit derselben und verfahren zu ihrer herstellung
DE10044500A1 (de) Licht emittierendes Verbindungshalbleiter-Bauteil und Verfahren zur Herstellung desselben
DE112020003524B4 (de) Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033480000

Ipc: H10H0020850000

R020 Patent grant now final