JP6999615B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6999615B2 JP6999615B2 JP2019141869A JP2019141869A JP6999615B2 JP 6999615 B2 JP6999615 B2 JP 6999615B2 JP 2019141869 A JP2019141869 A JP 2019141869A JP 2019141869 A JP2019141869 A JP 2019141869A JP 6999615 B2 JP6999615 B2 JP 6999615B2
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- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- component
- optical
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Description
4 透明支持部品
6、106、107 光学部品
1061 内表面
1062 外表面
8、12 光学層
10 反射層
1201 第一光学層
1202 第二光学層
1203 第三光学層
14 フォトレジスト
520 放熱装置
521 放熱部
522 支持部
5221 第一部分
5222 第二部分
5223 第三部分
20 載置板
201 発光積層
21 基板
212 第一型半導体層
213 活性層
214 第二型半導体層
215 第一電極層
216 第二電極層
217 阻止層
22 側面
24 出射面
26 接合面
30 波長変換層
40 載置板
42 側壁
44、68 頂部面
46 底面
480、482 斜面
60 隔離層
62 側辺
64、66 斜辺
71 第一仮設載置板
72 第二仮設載置板
80、82、84、86、88 切断線
801、811 成長基板
802 溝
100、200、300、400、500、600、700、800、900、1000、1000R、1000G、1000B、1000P 発光装置
122 第一絶縁層
124 第二絶縁層
126 第三絶縁層
142 第一電極
143 隙間
144 第二電極
146 中間層
1420、1440、1480 導電粘着材料
1481 基材
1482 導電粘着膜
601 第一区域
602、604 第二区域
6021、6022、6023、6024、6025、6026、6027、6028、6029、6030、6031、6032、6033、6034 第二サブ区域
W、WL、WD 幅
D 深さ
A 陥没方向
θ 頂部角度
Claims (10)
- 発光装置であって、
第一上表面を有する半導体発光部品;
前記半導体発光部品の上に位置し、且つ第二上表面を有する光学部品であって、前記第二上表面は、複数の平面区域と、前記複数の平面区域の間に位置して前記複数の平面区域を互いに分離する凹入区域とを含む、光学部品;及び
前記凹入区域の上に位置する光学層を含み、
前記凹入区域は、第一サブ区域及び第二サブ区域を含み、前記第一サブ区域と前記第二サブ区域の幅は異なり、かつ完全にオーバーラップせず、
前記第一サブ区域及び前記第二サブ区域は、それぞれ、前記第二上表面のうちの一方側から他方側に延伸している、発光装置。 - 請求項1に記載の発光装置であって、
前記光学層は、ピーク波長が400~600nmにある光線に対して、80%よりも大きい反射率を有する、発光装置。 - 請求項1に記載の発光装置であって、
前記複数の平面区域の面積がすべて異なる、発光装置。 - 請求項1に記載の発光装置であって、
前記複数の平面区域の面積がすべて同じである、発光装置。 - 請求項1に記載の発光装置であって、
前記半導体発光部品と前記光学部品との間に形成されている透明部品をさらに含む、発光装置。 - 請求項5に記載の発光装置であって、
前記透明部品は、波長変換材料を含む、発光装置。 - 請求項5に記載の発光装置であって、
前記透明部品は、前記複数の平面区域に平行な第三上表面を有する、発光装置。 - 請求項1に記載の発光装置であって、
前記複数の平面区域は、同じでない形状を有し、該同じでない形状は同じでない数の内角を有する、発光装置。 - 請求項1に記載の発光装置であって、
上面図において、前記光学層の最大幅が前記半導体発光部品の最大幅よりも大きい、発光装置。 - 請求項1に記載の発光装置であって、
前記光学層は、前記凹入区域の一部のみを覆う、発光装置。
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102242660B1 (ko) * | 2013-09-11 | 2021-04-21 | 엘지디스플레이 주식회사 | 발광 다이오드 소자 및 이를 포함하는 백라이트 유닛과 이의 제조 방법 |
JP6438648B2 (ja) * | 2013-11-15 | 2018-12-19 | 日亜化学工業株式会社 | 半導体発光装置およびその製造方法 |
US10297731B2 (en) * | 2014-11-26 | 2019-05-21 | Bridgelux, Inc. | Light emitting diode constructions and methods for making the same |
JP2017054933A (ja) * | 2015-09-09 | 2017-03-16 | 株式会社東芝 | 発光装置及びその製造方法 |
JP7266961B2 (ja) * | 2015-12-31 | 2023-05-01 | 晶元光電股▲ふん▼有限公司 | 発光装置 |
TWI583028B (zh) * | 2016-02-05 | 2017-05-11 | 行家光電股份有限公司 | 具有光形調整結構之發光裝置及其製造方法 |
US9859470B2 (en) * | 2016-03-10 | 2018-01-02 | Epistar Corporation | Light-emitting device with adjusting element |
US20170345983A1 (en) * | 2016-05-26 | 2017-11-30 | Epistar Corporation | Light-emitting device and light-emitting apparatus comprising the same |
TWI790984B (zh) * | 2017-01-26 | 2023-01-21 | 晶元光電股份有限公司 | 發光元件 |
JP7077202B2 (ja) * | 2017-10-26 | 2022-05-30 | 晶元光電股▲ふん▼有限公司 | 発光装置 |
JP6870592B2 (ja) * | 2017-11-24 | 2021-05-12 | 豊田合成株式会社 | 発光装置 |
TWI805564B (zh) | 2018-01-25 | 2023-06-21 | 晶元光電股份有限公司 | 晶粒轉移方法及其裝置 |
KR20190098709A (ko) * | 2018-02-14 | 2019-08-22 | 에피스타 코포레이션 | 발광 장치, 그 제조 방법 및 디스플레이 모듈 |
CN108321288A (zh) * | 2018-04-04 | 2018-07-24 | 聚灿光电科技(宿迁)有限公司 | Led光源及其制造方法 |
JP6806218B2 (ja) | 2018-10-31 | 2021-01-06 | 日亜化学工業株式会社 | 発光装置、発光モジュール、発光装置及び発光モジュールの製造方法 |
CN115128862A (zh) * | 2021-03-26 | 2022-09-30 | 群创光电股份有限公司 | 背光模块以及显示装置 |
CN114093998B (zh) * | 2022-01-21 | 2022-04-19 | 季华实验室 | 一种发光二极管、显示面板、显示装置及制备方法 |
TWI824688B (zh) | 2022-08-31 | 2023-12-01 | 晶呈科技股份有限公司 | 晶粒封裝體的接合與轉移方法 |
KR20240101136A (ko) * | 2022-12-23 | 2024-07-02 | 삼성전자주식회사 | 발광 다이오드 패키지 |
JP7515052B1 (ja) | 2023-01-31 | 2024-07-12 | 日亜化学工業株式会社 | 発光装置 |
EP4411845A1 (en) * | 2023-01-31 | 2024-08-07 | Nichia Corporation | Light-emitting device |
JP7515053B1 (ja) | 2023-01-31 | 2024-07-12 | 日亜化学工業株式会社 | 面状光源 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005353875A (ja) | 2004-06-11 | 2005-12-22 | Citizen Electronics Co Ltd | 発光ダイオード |
WO2009093497A1 (ja) | 2008-01-22 | 2009-07-30 | Alps Electric Co., Ltd. | 光反射体を用いたledパッケージ |
WO2009107661A1 (ja) | 2008-02-27 | 2009-09-03 | アルプス電気株式会社 | 発光体及びこれを用いた半導体発光装置 |
JP2012227537A (ja) | 2012-06-19 | 2012-11-15 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
JP2013042095A (ja) | 2011-08-19 | 2013-02-28 | Citizen Electronics Co Ltd | 半導体発光装置 |
JP2013118244A (ja) | 2011-12-02 | 2013-06-13 | Citizen Holdings Co Ltd | 半導体発光装置及びそれを用いた照明装置 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3193838B2 (ja) * | 1994-11-14 | 2001-07-30 | シャープ株式会社 | 光半導体装置 |
JP2001257381A (ja) | 2000-03-13 | 2001-09-21 | Sharp Corp | 発光ダイオードおよびその製造方法並びに照明装置 |
CN1147937C (zh) * | 2000-09-29 | 2004-04-28 | 北京大学 | 一种制备基于氮化镓发光二极管的方法 |
US20070126016A1 (en) * | 2005-05-12 | 2007-06-07 | Epistar Corporation | Light emitting device and manufacture method thereof |
US9000461B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic element and manufacturing method thereof |
US8999736B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
US7745832B2 (en) * | 2004-09-24 | 2010-06-29 | Epistar Corporation | Semiconductor light-emitting element assembly with a composite substrate |
TW200637033A (en) | 2004-11-22 | 2006-10-16 | Matsushita Electric Ind Co Ltd | Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device |
JP2006202938A (ja) * | 2005-01-20 | 2006-08-03 | Kojiro Kobayashi | 半導体装置及びその製造方法 |
US9018655B2 (en) * | 2005-02-03 | 2015-04-28 | Epistar Corporation | Light emitting apparatus and manufacture method thereof |
CN2826706Y (zh) * | 2005-06-01 | 2006-10-11 | 张龙宝 | 单颗和集群封装的功率led定向光源 |
KR100691179B1 (ko) | 2005-06-01 | 2007-03-09 | 삼성전기주식회사 | 측면 발광형 엘이디 패키지 및 그 제조 방법 |
TWI422666B (zh) | 2005-09-22 | 2014-01-11 | Mitsubishi Chem Corp | 半導體發光裝置用構件及其製造方法,暨使用其之半導體發光裝置 |
CN101506969B (zh) * | 2006-08-22 | 2011-08-31 | 三菱化学株式会社 | 半导体器件用部材、以及半导体器件用部材形成液和半导体器件用部材的制造方法、以及使用该方法制造的半导体器件用部材形成液、荧光体组合物、半导体发光器件、照明装置和图像显示装置 |
JP5213433B2 (ja) * | 2006-12-21 | 2013-06-19 | 富士フイルム株式会社 | 導電膜およびその製造方法 |
CN100585893C (zh) * | 2007-03-26 | 2010-01-27 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
JP2009130301A (ja) * | 2007-11-27 | 2009-06-11 | Sharp Corp | 発光素子および発光素子の製造方法 |
CN101197417B (zh) * | 2008-01-07 | 2010-09-15 | 普光科技(广州)有限公司 | 氮化镓基发光二极管芯片及其制作方法 |
US8309864B2 (en) * | 2008-01-31 | 2012-11-13 | Sanyo Electric Co., Ltd. | Device mounting board and manufacturing method therefor, and semiconductor module |
WO2009098831A1 (ja) * | 2008-02-07 | 2009-08-13 | Murata Manufacturing Co., Ltd. | 電子部品装置の製造方法 |
TW200936953A (en) | 2008-02-29 | 2009-09-01 | Univ Nat Chiao Tung | Structure of LED lens with reflective film |
CN101551077B (zh) * | 2008-04-03 | 2011-11-30 | 财团法人工业技术研究院 | 发光装置与应用其的背光装置及其组装方法 |
WO2010027581A1 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Monochromatic light source |
KR101497953B1 (ko) * | 2008-10-01 | 2015-03-05 | 삼성전자 주식회사 | 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
WO2011033516A1 (en) * | 2009-09-20 | 2011-03-24 | Viagan Ltd. | Wafer level packaging of electronic devices |
CN101740703B (zh) * | 2009-11-30 | 2013-04-17 | 中微光电子(潍坊)有限公司 | 一种led芯片及其制造方法 |
JP2011155060A (ja) * | 2010-01-26 | 2011-08-11 | Citizen Holdings Co Ltd | 発光デバイス |
WO2011093454A1 (ja) * | 2010-01-29 | 2011-08-04 | シチズン電子株式会社 | 発光装置の製造方法及び発光装置 |
CN101782203B (zh) | 2010-02-04 | 2012-02-01 | 广东昭信光电科技有限公司 | 一种包含自由曲面反射器的背光系统 |
CN103003966B (zh) | 2010-05-18 | 2016-08-10 | 首尔半导体株式会社 | 具有波长变换层的发光二级管芯片及其制造方法,以及包括其的封装件及其制造方法 |
KR101653684B1 (ko) * | 2010-05-28 | 2016-09-02 | 삼성전자 주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 및 이들의 제조 방법 |
JP5414627B2 (ja) | 2010-06-07 | 2014-02-12 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
CN102062320A (zh) * | 2010-12-16 | 2011-05-18 | 西安炬光科技有限公司 | 一种带光学整形的led光源模块及其制备方法 |
US20120295098A1 (en) * | 2011-05-19 | 2012-11-22 | Trillion Science, Inc. | Fixed-array anisotropic conductive film using surface modified conductive particles |
US8624482B2 (en) | 2011-09-01 | 2014-01-07 | Toshiba Techno Center Inc. | Distributed bragg reflector for reflecting light of multiple wavelengths from an LED |
JP5916334B2 (ja) * | 2011-10-07 | 2016-05-11 | デクセリアルズ株式会社 | 異方性導電接着剤及びその製造方法、発光装置及びその製造方法 |
JP2013115088A (ja) * | 2011-11-25 | 2013-06-10 | Citizen Holdings Co Ltd | 半導体発光装置 |
TWI606618B (zh) | 2012-01-03 | 2017-11-21 | Lg伊諾特股份有限公司 | 發光裝置 |
US20130240934A1 (en) * | 2012-03-14 | 2013-09-19 | Samsung Electronics Co., Ltd. | Light emitting element package and method of manufacturing the same |
JP5943677B2 (ja) | 2012-03-31 | 2016-07-05 | キヤノン株式会社 | 探触子、及びそれを用いた被検体情報取得装置 |
CN103378282A (zh) | 2012-04-27 | 2013-10-30 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
KR101501679B1 (ko) * | 2012-04-30 | 2015-03-11 | 주식회사 포스코엘이디 | 광반도체 기반 조명장치 및 이에 이용되는 광학부재의 제조방법 |
KR20140101220A (ko) * | 2013-02-08 | 2014-08-19 | 삼성전자주식회사 | 조명 장치 |
KR102075982B1 (ko) | 2013-03-15 | 2020-02-12 | 삼성전자주식회사 | 반도체 발광소자 패키지 |
CN203812906U (zh) * | 2014-03-12 | 2014-09-03 | 上海亚浦耳照明电器有限公司 | 一种led芯片封装体 |
-
2014
- 2014-09-26 TW TW103133696A patent/TWI707484B/zh active
- 2014-11-13 KR KR1020140157831A patent/KR102072598B1/ko active IP Right Grant
- 2014-11-13 JP JP2014230596A patent/JP2015095658A/ja active Pending
- 2014-11-14 DE DE102014016854.9A patent/DE102014016854B4/de active Active
- 2014-11-14 CN CN201410653615.4A patent/CN104633493B/zh active Active
- 2014-11-14 US US14/541,680 patent/US11011681B2/en active Active
- 2014-11-14 CN CN201810409331.9A patent/CN108533993A/zh active Pending
-
2019
- 2019-08-01 JP JP2019141869A patent/JP6999615B2/ja active Active
-
2020
- 2020-01-28 KR KR1020200009733A patent/KR102253516B1/ko active IP Right Grant
-
2021
- 2021-05-12 KR KR1020210061228A patent/KR102349834B1/ko active IP Right Grant
- 2021-12-22 JP JP2021207648A patent/JP7277557B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005353875A (ja) | 2004-06-11 | 2005-12-22 | Citizen Electronics Co Ltd | 発光ダイオード |
WO2009093497A1 (ja) | 2008-01-22 | 2009-07-30 | Alps Electric Co., Ltd. | 光反射体を用いたledパッケージ |
WO2009107661A1 (ja) | 2008-02-27 | 2009-09-03 | アルプス電気株式会社 | 発光体及びこれを用いた半導体発光装置 |
JP2013042095A (ja) | 2011-08-19 | 2013-02-28 | Citizen Electronics Co Ltd | 半導体発光装置 |
JP2013118244A (ja) | 2011-12-02 | 2013-06-13 | Citizen Holdings Co Ltd | 半導体発光装置及びそれを用いた照明装置 |
JP2012227537A (ja) | 2012-06-19 | 2012-11-15 | Mitsubishi Electric Corp | Led光源及びそれを用いた発光体 |
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