JP7055173B2 - 基板処理装置、半導体装置の製造方法及び基板処理プログラム - Google Patents

基板処理装置、半導体装置の製造方法及び基板処理プログラム Download PDF

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JP7055173B2
JP7055173B2 JP2020117977A JP2020117977A JP7055173B2 JP 7055173 B2 JP7055173 B2 JP 7055173B2 JP 2020117977 A JP2020117977 A JP 2020117977A JP 2020117977 A JP2020117977 A JP 2020117977A JP 7055173 B2 JP7055173 B2 JP 7055173B2
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Japan
Prior art keywords
pressure
pipe
processing chamber
processing
valve
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JP2020117977A
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English (en)
Japanese (ja)
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JP2021027339A (ja
Inventor
正導 谷内
高行 中田
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Kokusai Electric Corp
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Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to KR1020200094132A priority Critical patent/KR20210018075A/ko
Priority to SG10202007254WA priority patent/SG10202007254WA/en
Priority to TW109126304A priority patent/TWI797469B/zh
Priority to CN202010780129.4A priority patent/CN112349623A/zh
Priority to US16/985,785 priority patent/US11846025B2/en
Publication of JP2021027339A publication Critical patent/JP2021027339A/ja
Application granted granted Critical
Publication of JP7055173B2 publication Critical patent/JP7055173B2/ja
Priority to KR1020230116999A priority patent/KR20230130596A/ko
Priority to US18/504,420 priority patent/US20240076780A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2020117977A 2019-08-06 2020-07-08 基板処理装置、半導体装置の製造方法及び基板処理プログラム Active JP7055173B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020200094132A KR20210018075A (ko) 2019-08-06 2020-07-29 기판 처리 장치, 반도체 장치의 제조 방법 및 기판 처리 프로그램
SG10202007254WA SG10202007254WA (en) 2019-08-06 2020-07-29 Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing program
TW109126304A TWI797469B (zh) 2019-08-06 2020-08-04 基板處理裝置、半導體裝置之製造方法及基板處理程式
US16/985,785 US11846025B2 (en) 2019-08-06 2020-08-05 Substrate processing apparatus capable of adjusting inner pressure of process chamber thereof and method therefor
CN202010780129.4A CN112349623A (zh) 2019-08-06 2020-08-05 基板处理装置、半导体装置的制造方法和计算机可读取记录介质
KR1020230116999A KR20230130596A (ko) 2019-08-06 2023-09-04 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
US18/504,420 US20240076780A1 (en) 2019-08-06 2023-11-08 Substrate processing apparatus and exhaust system capable of adjusting inner pressure of process chamber thereof, and method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019144877 2019-08-06
JP2019144877 2019-08-06

Publications (2)

Publication Number Publication Date
JP2021027339A JP2021027339A (ja) 2021-02-22
JP7055173B2 true JP7055173B2 (ja) 2022-04-15

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JP2020117977A Active JP7055173B2 (ja) 2019-08-06 2020-07-08 基板処理装置、半導体装置の製造方法及び基板処理プログラム

Country Status (4)

Country Link
JP (1) JP7055173B2 (ko)
KR (1) KR20210018075A (ko)
SG (1) SG10202007254WA (ko)
TW (1) TWI797469B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7357660B2 (ja) * 2021-07-09 2023-10-06 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257197A (ja) 2000-03-10 2001-09-21 Hitachi Ltd 半導体デバイスの製造方法および製造装置
JP2002134492A (ja) 2000-10-27 2002-05-10 Tokyo Electron Ltd 熱処理装置
JP2004206662A (ja) 2002-11-08 2004-07-22 Tokyo Electron Ltd 処理装置及び処理方法
JP2008153695A (ja) 2008-03-06 2008-07-03 Tokyo Electron Ltd 被処理体の処理装置
JP2012054393A (ja) 2010-09-01 2012-03-15 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
WO2014157071A1 (ja) 2013-03-25 2014-10-02 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3355238B2 (ja) * 1993-11-16 2002-12-09 株式会社日立国際電気 半導体成膜装置
JP3567070B2 (ja) * 1997-12-27 2004-09-15 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US5948169A (en) * 1998-03-11 1999-09-07 Vanguard International Semiconductor Corporation Apparatus for preventing particle deposition in a capacitance diaphragm gauge
JP4521889B2 (ja) * 1998-04-23 2010-08-11 株式会社日立国際電気 基板処理装置
JP5792390B2 (ja) * 2012-07-30 2015-10-14 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP2015183985A (ja) * 2014-03-26 2015-10-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6910798B2 (ja) * 2016-03-15 2021-07-28 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥方法および減圧乾燥装置
JP2019036654A (ja) * 2017-08-18 2019-03-07 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法
JP6613276B2 (ja) * 2017-09-22 2019-11-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラム、記録媒体および基板処理装置
JP6808690B2 (ja) * 2018-07-25 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス 減圧乾燥装置、基板処理装置および減圧乾燥方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257197A (ja) 2000-03-10 2001-09-21 Hitachi Ltd 半導体デバイスの製造方法および製造装置
JP2002134492A (ja) 2000-10-27 2002-05-10 Tokyo Electron Ltd 熱処理装置
JP2004206662A (ja) 2002-11-08 2004-07-22 Tokyo Electron Ltd 処理装置及び処理方法
JP2008153695A (ja) 2008-03-06 2008-07-03 Tokyo Electron Ltd 被処理体の処理装置
JP2012054393A (ja) 2010-09-01 2012-03-15 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
WO2014157071A1 (ja) 2013-03-25 2014-10-02 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法

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Publication number Publication date
TW202111251A (zh) 2021-03-16
SG10202007254WA (en) 2021-03-30
TWI797469B (zh) 2023-04-01
JP2021027339A (ja) 2021-02-22
KR20210018075A (ko) 2021-02-17

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