SG10202007254WA - Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing program - Google Patents

Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing program

Info

Publication number
SG10202007254WA
SG10202007254WA SG10202007254WA SG10202007254WA SG10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA SG 10202007254W A SG10202007254W A SG 10202007254WA
Authority
SG
Singapore
Prior art keywords
substrate processing
semiconductor device
manufacturing semiconductor
processing apparatus
processing program
Prior art date
Application number
SG10202007254WA
Inventor
Yachi Masamichi
Nakada Takayuki
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG10202007254WA publication Critical patent/SG10202007254WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
SG10202007254WA 2019-08-06 2020-07-29 Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing program SG10202007254WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019144877 2019-08-06
JP2020117977A JP7055173B2 (en) 2019-08-06 2020-07-08 Substrate processing equipment, semiconductor device manufacturing method and substrate processing program

Publications (1)

Publication Number Publication Date
SG10202007254WA true SG10202007254WA (en) 2021-03-30

Family

ID=74662512

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202007254WA SG10202007254WA (en) 2019-08-06 2020-07-29 Substrate processing apparatus, method of manufacturing semiconductor device and substrate processing program

Country Status (4)

Country Link
JP (1) JP7055173B2 (en)
KR (1) KR20210018075A (en)
SG (1) SG10202007254WA (en)
TW (1) TWI797469B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7357660B2 (en) * 2021-07-09 2023-10-06 株式会社Kokusai Electric Substrate processing equipment, semiconductor device manufacturing method and program

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3355238B2 (en) * 1993-11-16 2002-12-09 株式会社日立国際電気 Semiconductor film forming equipment
JP3567070B2 (en) * 1997-12-27 2004-09-15 東京エレクトロン株式会社 Heat treatment apparatus and heat treatment method
US5948169A (en) * 1998-03-11 1999-09-07 Vanguard International Semiconductor Corporation Apparatus for preventing particle deposition in a capacitance diaphragm gauge
JP4521889B2 (en) * 1998-04-23 2010-08-11 株式会社日立国際電気 Substrate processing equipment
JP2001257197A (en) * 2000-03-10 2001-09-21 Hitachi Ltd Manufacturing method and manufacturing device for semiconductor device
JP3872952B2 (en) * 2000-10-27 2007-01-24 東京エレクトロン株式会社 Heat treatment apparatus and heat treatment method
JP4244674B2 (en) * 2002-11-08 2009-03-25 東京エレクトロン株式会社 Processing apparatus and processing method
JP4675388B2 (en) * 2008-03-06 2011-04-20 東京エレクトロン株式会社 Processing device for workpiece
JP2012054393A (en) * 2010-09-01 2012-03-15 Hitachi Kokusai Electric Inc Substrate processing apparatus and semiconductor manufacturing method
KR101750633B1 (en) * 2012-07-30 2017-06-23 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium
KR20150120470A (en) * 2013-03-25 2015-10-27 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing device, method for manufacturing semiconductor device, and method for processing substrate
JP2015183985A (en) * 2014-03-26 2015-10-22 株式会社Ｓｃｒｅｅｎホールディングス substrate processing apparatus and substrate processing method
JP6910798B2 (en) * 2016-03-15 2021-07-28 株式会社Ｓｃｒｅｅｎホールディングス Vacuum drying method and vacuum drying device
JP2019036654A (en) * 2017-08-18 2019-03-07 株式会社Ｓｃｒｅｅｎホールディングス Decompression drying device, substrate processing apparatus, and decompression drying method
JP6613276B2 (en) * 2017-09-22 2019-11-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, program, recording medium, and substrate processing apparatus
JP6808690B2 (en) * 2018-07-25 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス Vacuum drying device, substrate processing device and vacuum drying method

Also Published As

Publication number Publication date
JP2021027339A (en) 2021-02-22
TW202111251A (en) 2021-03-16
TWI797469B (en) 2023-04-01
KR20210018075A (en) 2021-02-17
JP7055173B2 (en) 2022-04-15

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