SG10202011563TA - Method of manufacturing semiconductor device, substrate processing apparatus, and program - Google Patents

Method of manufacturing semiconductor device, substrate processing apparatus, and program

Info

Publication number
SG10202011563TA
SG10202011563TA SG10202011563TA SG10202011563TA SG10202011563TA SG 10202011563T A SG10202011563T A SG 10202011563TA SG 10202011563T A SG10202011563T A SG 10202011563TA SG 10202011563T A SG10202011563T A SG 10202011563TA SG 10202011563T A SG10202011563T A SG 10202011563TA
Authority
SG
Singapore
Prior art keywords
program
semiconductor device
processing apparatus
substrate processing
manufacturing semiconductor
Prior art date
Application number
SG10202011563TA
Inventor
Motomu Degai
Kimihiko Nakatani
Takashi Nakagawa
Takayuki Waseda
Yoshitomo Hashimoto
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG10202011563TA publication Critical patent/SG10202011563TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Element Separation (AREA)
SG10202011563TA 2019-11-22 2020-11-20 Method of manufacturing semiconductor device, substrate processing apparatus, and program SG10202011563TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019211137A JP7114554B2 (en) 2019-11-22 2019-11-22 Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program

Publications (1)

Publication Number Publication Date
SG10202011563TA true SG10202011563TA (en) 2021-06-29

Family

ID=75923268

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202011563TA SG10202011563TA (en) 2019-11-22 2020-11-20 Method of manufacturing semiconductor device, substrate processing apparatus, and program

Country Status (6)

Country Link
US (3) US11315800B2 (en)
JP (1) JP7114554B2 (en)
KR (2) KR102567010B1 (en)
CN (1) CN112838003A (en)
SG (1) SG10202011563TA (en)
TW (2) TWI796256B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11699593B2 (en) 2020-07-16 2023-07-11 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7313402B2 (en) * 2021-06-29 2023-07-24 株式会社Kokusai Electric Semiconductor device manufacturing method, substrate processing apparatus, program and etching method
JP2023184336A (en) * 2022-06-17 2023-12-28 株式会社Kokusai Electric Substrate processing method, method of manufacturing semiconductor device, substrate processing device, and program

Family Cites Families (17)

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JP3548512B2 (en) * 2000-09-28 2004-07-28 日本電気株式会社 Method for manufacturing semiconductor device
US6391803B1 (en) * 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
KR20100071961A (en) 2007-09-19 2010-06-29 가부시키가이샤 히다치 고쿠사이 덴키 Cleaning method and substrate processing apparatus
JP5036849B2 (en) * 2009-08-27 2012-09-26 株式会社日立国際電気 Semiconductor device manufacturing method, cleaning method, and substrate processing apparatus
US9362163B2 (en) * 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
WO2016100873A1 (en) * 2014-12-18 2016-06-23 The Regents Of The University Of Colorado, A Body Corporate Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9881807B2 (en) * 2015-03-30 2018-01-30 Tokyo Electron Limited Method for atomic layer etching
US9502238B2 (en) * 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US9620376B2 (en) * 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US9735024B2 (en) * 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
JP6770825B2 (en) 2016-04-27 2020-10-21 東京エレクトロン株式会社 Substrate processing method and substrate processing equipment
WO2017213842A2 (en) * 2016-05-23 2017-12-14 The Regents Of The University Of Colorado, A Body Corporate Enhancement of thermal atomic layer etching
JP6817752B2 (en) * 2016-09-09 2021-01-20 株式会社日立ハイテク Etching method and etching equipment
TWI757545B (en) * 2017-09-15 2022-03-11 日商關東電化工業股份有限公司 Atomic Layer Etching Using Acid Halides
US20190131130A1 (en) * 2017-10-31 2019-05-02 Lam Research Corporation Etching metal oxide substrates using ale and selective deposition
JP6843087B2 (en) 2018-03-12 2021-03-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing methods, substrate processing devices and programs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11699593B2 (en) 2020-07-16 2023-07-11 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

Also Published As

Publication number Publication date
JP2021082774A (en) 2021-05-27
JP7114554B2 (en) 2022-08-08
KR102567010B1 (en) 2023-08-16
US20210159088A1 (en) 2021-05-27
KR20210063249A (en) 2021-06-01
TW202137311A (en) 2021-10-01
US20220199421A1 (en) 2022-06-23
TWI796256B (en) 2023-03-11
TW202249098A (en) 2022-12-16
US11894239B2 (en) 2024-02-06
US20240136200A1 (en) 2024-04-25
TWI772960B (en) 2022-08-01
US11315800B2 (en) 2022-04-26
CN112838003A (en) 2021-05-25
KR20230123908A (en) 2023-08-24

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