JP7036198B2 - 半導体装置、半導体ウエハおよび半導体装置の製造方法 - Google Patents
半導体装置、半導体ウエハおよび半導体装置の製造方法 Download PDFInfo
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Description
本願の発明に係る半導体装置の製造方法では、マスクの上からプロトンを照射することで、有効領域にライフタイム制御層を形成し、無効領域のうち例えば測定層に結晶欠陥層を形成する。測定層に結晶欠陥層が設けられると、測定層の抵抗値または電流値が変動する。このため、複数の測定用電極を用いて測定層の抵抗値または電流値を測定することで、容易にライフタイム制御層の深さを判定できる。
図1は、実施の形態1に係る半導体装置100の断面図である。半導体装置100は、半導体基板10と、半導体基板10の上面に設けられた上面電極層40と、半導体基板10の裏面に設けられた裏面電極層46とを備える。半導体基板10は、主電流が流れる有効領域10cと、有効領域10cを囲む無効領域10dとを有する。
図5は、実施の形態2に係る半導体装置200の断面図である。半導体装置200では、無効領域210dの構造が実施の形態1と異なる。これ以外は実施の形態1と同様である。なお、図5では便宜上、製造工程で用いられる遮蔽板80とマスク282が図示されている。
図6は、実施の形態3に係る半導体装置300の断面図である。本実施の形態では測定層330の構造が実施の形態1と異なる。これ以外は実施の形態1と同様である。測定層330は、第1測定層331と第2測定層332とを含む。無効領域310dにはドリフト層16の上面側にp型の導電層328dが設けられる。第1測定層331は、両端に設けられた導電層328dと、ドリフト層16のうち導電層328dに挟まれた部分16aとを含む。同様に、第2測定層332は、両端に設けられた導電層328dと、ドリフト層16のうち導電層328dに挟まれた部分16aとを含む。
Claims (14)
- 主電流が流れる有効領域と、前記有効領域を囲む無効領域と、を有する半導体基板と、
前記半導体基板の上面に設けられた上面電極層と、
前記半導体基板の裏面に設けられた裏面電極層と、
を備え、
前記半導体基板は、
前記有効領域に設けられ、周囲よりも結晶欠陥密度が高いライフタイム制御層と、
前記無効領域の上面側に設けられた測定層と、
前記無効領域に設けられ、周囲よりも結晶欠陥密度が高い結晶欠陥層と、
を備え、
前記上面電極層は、前記測定層の上に設けられた複数の測定用電極を備え、
前記測定層は、少なくとも前記複数の測定用電極が設けられる部分に導電層を有し、
前記結晶欠陥層は、前記半導体基板の上面と垂直な方向から見て前記複数の測定用電極の間に設けられることを特徴とする半導体装置。 - 前記結晶欠陥層は、前記ライフタイム制御層よりも上方に設けられることを特徴とする請求項1に記載の半導体装置。
- 前記結晶欠陥層は、前記測定層に設けられることを特徴とする請求項1または2に記載の半導体装置。
- 前記測定層は、第1測定層と、第2測定層と、を含み、
前記結晶欠陥層は前記第1測定層に設けられ、前記第2測定層には設けられないことを特徴とする請求項1または2に記載の半導体装置。 - 前記測定層は、第1測定層と、第2測定層と、を含み、
前記結晶欠陥層は、前記第1測定層に設けられた第1結晶欠陥層と、前記第2測定層の直下に設けられた第2結晶欠陥層と、を含むことを特徴とする請求項1または2に記載の半導体装置。 - 前記測定層は、第1測定層と、第2測定層と、第3測定層と、を含み、
前記結晶欠陥層は、前記第1測定層に設けられた第1結晶欠陥層と、前記第2測定層の直下に設けられた第2結晶欠陥層と、を含むことを特徴とする請求項1または2に記載の半導体装置。 - 前記導電層は、第1導電型の半導体層の上面側に形成され、第2導電型であり、
前記測定層は、両端に設けられた前記導電層と、前記半導体層のうち前記導電層に挟まれた部分と、を含むことを特徴とする請求項1から6の何れか1項に記載の半導体装置。 - 前記半導体基板は、
裏面側に設けられた第1導電型のカソードと、
上面側に設けられた前記第1導電型のドリフト層と、
前記ドリフト層の上面側に設けられた第2導電型のアノードと、
を備え、
前記ライフタイム制御層は前記ドリフト層に設けられることを特徴とする請求項1から7の何れか1項に記載の半導体装置。 - 前記アノードの上面側に設けられた前記第2導電型の拡散層を備え、
前記導電層は、前記拡散層と同じ層であることを特徴とする請求項8に記載の半導体装置。 - 前記半導体基板は、ワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1から9の何れか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料またはダイヤモンドであることを特徴とする請求項10に記載の半導体装置。
- 請求項1~11の何れか1項に記載の半導体装置が複数形成されたことを特徴とする半導体ウエハ。
- 半導体基板に、主電流が流れる有効領域と、前記有効領域を囲み上面側に測定層が形成された無効領域と、を形成し、
前記半導体基板の上面に、前記測定層の上の複数の測定用電極を含む上面電極層を形成し、
前記半導体基板の裏面に裏面電極層を形成し、
前記半導体基板の上面からの高さが、前記有効領域よりも前記測定層の上で高くなるように、前記上面電極層の上にマスクを形成し、
前記マスクの上からプロトンを照射して、前記有効領域にライフタイム制御層を形成し、前記半導体基板の上面と垂直な方向から見て前記複数の測定用電極の間に結晶欠陥層を形成し、
前記マスクを除去し、プロトン照射後の前記複数の測定用電極の間の抵抗値を測定し、
前記測定層には、少なくとも前記複数の測定用電極が設けられる部分に導電層が形成されることを特徴とする半導体装置の製造方法。 - 前記マスクを形成する前に、前記複数の測定用電極の間のプロトン照射前の抵抗値を測定し、
前記複数の測定用電極の間の前記プロトン照射前の抵抗値と前記プロトン照射後の抵抗値を比較することを特徴とする請求項13に記載の半導体装置の製造方法。
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