JP6823270B2 - 半導体装置及び半導体集積回路 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 60
- 239000000758 substrate Substances 0.000 claims description 10
- 230000010355 oscillation Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 238000006880 cross-coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 20
- 230000020169 heat generation Effects 0.000 description 15
- 238000002955 isolation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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Description
Claims (12)
- 基板に形成され、互いに対向した第1の端部及び第2の端部を有する素子分離領域と、
前記基板に形成され、前記第1の端部から前記第2の端部に向かって延在する凸状の半導体領域と、
それぞれ、前記素子分離領域の前記第1の端部及び前記第2の端部に隣接して、前記凸状の半導体領域の両端部の両側面及び上面に形成され、電気的にフローティングである一対のダミーゲート電極と、
前記凸状の半導体領域の第1の部分の両側面及び上面に形成されたゲート電極であって、前記一対のダミーゲート電極の間に形成され、複数の第1のトランジスタを構成する複数の第1のゲート電極と、
前記第1の部分とは異なる前記凸状の半導体領域の第2の部分の両側面及び上面に形成されたゲート電極であって、前記複数の第1のゲート電極と同一の層に、前記一対のダミーゲート電極の間、かつ、前記複数の第1のゲート電極の間に、前記第1のゲート電極と並列に形成され、第2のトランジスタを構成する少なくとも1つの第2のゲート電極と、
を有し、
前記複数の第1のトランジスタは、それぞれFinFETであり、前記第1のゲート電極に入力される信号に応じて駆動され、
前記第2のトランジスタは、前記第2のゲート電極に前記第2のトランジスタをオフ状態とするゲート電圧が印加される
ことを特徴とする半導体装置。 - 前記第2のゲート電極には、前記ゲート電圧として、前記第2のトランジスタのバックゲートと同じ電圧が印加されることを特徴とする請求項1記載の半導体装置。
- 前記複数の第1のゲート電極の各々の間に、前記第2のゲート電極が形成されていることを特徴とする請求項1又は2記載の半導体装置。
- 隣接する2つの前記第1のゲート電極を1組とし、前記第1のゲート電極の組の各々の間に、前記第2のゲート電極が形成されていることを特徴とする請求項1又は2記載の半導体装置。
- 前記第1のゲート電極及び前記第2のゲート電極の両側の前記凸状の半導体領域に形成されたソース領域及びドレイン領域をさらに有し、
前記複数の第1のトランジスタ及び前記第2のトランジスタは前記ソース領域及びドレイン領域を有する
ことを特徴とする請求項1〜4の何れか1項に記載の半導体装置。 - 半導体装置に形成され、複数のトランジスタを含む第1の回路を有し、
前記半導体装置は、
基板に形成され、互いに対向した第1の端部及び第2の端部を有する素子分離領域と、
前記基板に形成され、前記第1の端部から前記第2の端部に向かって延在する凸状の半導体領域と、
それぞれ、前記素子分離領域の前記第1の端部及び前記第2の端部に隣接して、前記凸状の半導体領域の両端部の両側面及び上面に形成され、電気的にフローティングである一対のダミーゲート電極と、
前記凸状の半導体領域の第1の部分の両側面及び上面に形成されたゲート電極であって、前記一対のダミーゲート電極の間に形成され、複数の第1のトランジスタの構成要素となる複数の第1のゲート電極と、
前記第1の部分とは異なる前記凸状の半導体領域の第2の部分の両側面及び上面に形成されたゲート電極であって、前記複数の第1のゲート電極と同一の層に、前記一対のダミーゲート電極の間、かつ、前記複数の第1のゲート電極の間に、前記第1のゲート電極と並列に形成され、第2のトランジスタを構成する少なくとも1つの第2のゲート電極と、
を有し、
前記複数の第1のトランジスタは、それぞれFinFETであり、前記第1のゲート電極に入力される信号に応じて駆動され、
前記第2のトランジスタは、前記第2のゲート電極に前記第2のトランジスタをオフ状態とするゲート電圧が印加される
ことを特徴とする半導体集積回路。 - 前記第1の回路は、
前記複数の第1のトランジスタにより構成されクロスカップリングされたインバータと、
前記インバータの出力ノード間に接続されたインダクタと、
前記インバータの出力ノード間に、前記インダクタと並列に接続された容量とを有する発振回路であることを特徴とする請求項6記載の半導体集積回路。 - 前記第1の回路は、
前記複数の第1のトランジスタの1つである第3のトランジスタと、
前記複数の第1のトランジスタの別の1つであり、前記第3のトランジスタとカレントミラー接続された第4のトランジスタとを有するバイアス回路であることを特徴とする請求項6記載の半導体集積回路。 - 前記第2のゲート電極には、前記ゲート電圧として、前記第2のトランジスタのバックゲートと同じ電圧が印加されることを特徴とする請求項6〜8の何れか1項に記載の半導体集積回路。
- 前記複数の第1のゲート電極の各々の間に、前記第2のゲート電極が形成されていることを特徴とする請求項6〜9の何れか1項に記載の半導体集積回路。
- 隣接する2つの前記第1のゲート電極を1組とし、前記第1のゲート電極の組の各々の間に、前記第2のゲート電極が形成されていることを特徴とする請求項6〜9の何れか1項に記載の半導体集積回路。
- 前記半導体装置は前記第1のゲート電極及び前記第2のゲート電極の両側の前記凸状の半導体領域に形成されたソース領域及びドレイン領域をさらに有し、
前記複数の第1のトランジスタ及び前記第2のトランジスタは前記ソース領域及びドレイン領域を有する
ことを特徴とする請求項6〜11の何れか1項に記載の半導体集積回路。
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US11557590B2 (en) * | 2020-02-19 | 2023-01-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor gate profile optimization |
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Publication number | Publication date |
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CN109417033A (zh) | 2019-03-01 |
EP3477686A1 (en) | 2019-05-01 |
US10971494B2 (en) | 2021-04-06 |
CN109417033B (zh) | 2022-03-18 |
US20210091082A1 (en) | 2021-03-25 |
US11362092B2 (en) | 2022-06-14 |
JPWO2018003001A1 (ja) | 2019-04-18 |
US20190131303A1 (en) | 2019-05-02 |
EP3477686A4 (en) | 2019-06-19 |
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