CN102263104B - Mos结构的esd保护器件 - Google Patents
Mos结构的esd保护器件 Download PDFInfo
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- CN102263104B CN102263104B CN 201110162466 CN201110162466A CN102263104B CN 102263104 B CN102263104 B CN 102263104B CN 201110162466 CN201110162466 CN 201110162466 CN 201110162466 A CN201110162466 A CN 201110162466A CN 102263104 B CN102263104 B CN 102263104B
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CN 201110162466 CN102263104B (zh) | 2011-06-16 | 2011-06-16 | Mos结构的esd保护器件 |
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CN 201110162466 CN102263104B (zh) | 2011-06-16 | 2011-06-16 | Mos结构的esd保护器件 |
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CN102263104A CN102263104A (zh) | 2011-11-30 |
CN102263104B true CN102263104B (zh) | 2013-04-17 |
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CN 201110162466 Active CN102263104B (zh) | 2011-06-16 | 2011-06-16 | Mos结构的esd保护器件 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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GB201202519D0 (en) | 2012-02-13 | 2012-03-28 | Oxford Nanopore Tech Ltd | Apparatus for supporting an array of layers of amphiphilic molecules and method of forming an array of layers of amphiphilic molecules |
JP6033054B2 (ja) * | 2012-11-22 | 2016-11-30 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
JP6099985B2 (ja) * | 2013-01-18 | 2017-03-22 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
JP2014154595A (ja) * | 2013-02-05 | 2014-08-25 | Seiko Instruments Inc | 半導体装置 |
CN104143549B (zh) * | 2013-05-10 | 2017-07-18 | 熠芯(珠海)微电子研究院有限公司 | 一种静电释放保护电路版图及集成电路 |
WO2018003001A1 (ja) * | 2016-06-28 | 2018-01-04 | 株式会社ソシオネクスト | 半導体装置及び半導体集積回路 |
GB201611770D0 (en) | 2016-07-06 | 2016-08-17 | Oxford Nanopore Tech | Microfluidic device |
CN108321117A (zh) * | 2017-12-15 | 2018-07-24 | 西安科技大学 | 基于mos管的tsv转接板及其制备方法 |
AU2020239385A1 (en) | 2019-03-12 | 2021-08-26 | Oxford Nanopore Technologies Plc | Nanopore sensing device and methods of operation and of forming it |
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US6472286B1 (en) * | 2000-08-09 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Bipolar ESD protection structure |
US6724603B2 (en) * | 2002-08-09 | 2004-04-20 | Motorola, Inc. | Electrostatic discharge protection circuitry and method of operation |
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Owner name: BEIJING UNIV. Effective date: 20141102 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20141102 |
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Effective date of registration: 20141102 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |