CN102263104A - Mos结构的esd保护器件 - Google Patents
Mos结构的esd保护器件 Download PDFInfo
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- CN102263104A CN102263104A CN2011101624668A CN201110162466A CN102263104A CN 102263104 A CN102263104 A CN 102263104A CN 2011101624668 A CN2011101624668 A CN 2011101624668A CN 201110162466 A CN201110162466 A CN 201110162466A CN 102263104 A CN102263104 A CN 102263104A
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- protection device
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CN 201110162466 CN102263104B (zh) | 2011-06-16 | 2011-06-16 | Mos结构的esd保护器件 |
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CN 201110162466 CN102263104B (zh) | 2011-06-16 | 2011-06-16 | Mos结构的esd保护器件 |
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CN102263104A true CN102263104A (zh) | 2011-11-30 |
CN102263104B CN102263104B (zh) | 2013-04-17 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103839925A (zh) * | 2012-11-22 | 2014-06-04 | 精工电子有限公司 | 半导体装置 |
CN103972274A (zh) * | 2013-02-05 | 2014-08-06 | 精工电子有限公司 | 半导体装置 |
CN104143549A (zh) * | 2013-05-10 | 2014-11-12 | 炬力集成电路设计有限公司 | 一种静电释放保护电路版图及集成电路 |
CN104937701A (zh) * | 2013-01-18 | 2015-09-23 | 精工电子有限公司 | 半导体装置 |
CN108321117A (zh) * | 2017-12-15 | 2018-07-24 | 西安科技大学 | 基于mos管的tsv转接板及其制备方法 |
CN109417033A (zh) * | 2016-06-28 | 2019-03-01 | 株式会社索思未来 | 半导体装置以及半导体集成电路 |
US11561216B2 (en) | 2012-02-13 | 2023-01-24 | Oxford Nanopore Technologies Plc | Apparatus for supporting an array of layers of amphiphilic molecules and method of forming an array of layers of amphiphilic molecules |
US11596940B2 (en) | 2016-07-06 | 2023-03-07 | Oxford Nanopore Technologies Plc | Microfluidic device |
US11789006B2 (en) | 2019-03-12 | 2023-10-17 | Oxford Nanopore Technologies Plc | Nanopore sensing device, components and method of operation |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6472286B1 (en) * | 2000-08-09 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Bipolar ESD protection structure |
CN1628385A (zh) * | 2002-08-09 | 2005-06-15 | 自由度半导体公司 | 静电放电保护电路及工作方法 |
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2011
- 2011-06-16 CN CN 201110162466 patent/CN102263104B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6472286B1 (en) * | 2000-08-09 | 2002-10-29 | Taiwan Semiconductor Manufacturing Company | Bipolar ESD protection structure |
CN1628385A (zh) * | 2002-08-09 | 2005-06-15 | 自由度半导体公司 | 静电放电保护电路及工作方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11913936B2 (en) | 2012-02-13 | 2024-02-27 | Oxford Nanopore Technologies Plc | Apparatus for supporting an array of layers of amphiphilic molecules and method of forming an array of layers of amphiphilic molecules |
US11561216B2 (en) | 2012-02-13 | 2023-01-24 | Oxford Nanopore Technologies Plc | Apparatus for supporting an array of layers of amphiphilic molecules and method of forming an array of layers of amphiphilic molecules |
CN103839925B (zh) * | 2012-11-22 | 2018-01-02 | 精工半导体有限公司 | 半导体装置 |
CN103839925A (zh) * | 2012-11-22 | 2014-06-04 | 精工电子有限公司 | 半导体装置 |
CN104937701A (zh) * | 2013-01-18 | 2015-09-23 | 精工电子有限公司 | 半导体装置 |
CN103972274A (zh) * | 2013-02-05 | 2014-08-06 | 精工电子有限公司 | 半导体装置 |
CN104143549B (zh) * | 2013-05-10 | 2017-07-18 | 熠芯(珠海)微电子研究院有限公司 | 一种静电释放保护电路版图及集成电路 |
CN104143549A (zh) * | 2013-05-10 | 2014-11-12 | 炬力集成电路设计有限公司 | 一种静电释放保护电路版图及集成电路 |
CN109417033A (zh) * | 2016-06-28 | 2019-03-01 | 株式会社索思未来 | 半导体装置以及半导体集成电路 |
CN109417033B (zh) * | 2016-06-28 | 2022-03-18 | 株式会社索思未来 | 半导体装置以及半导体集成电路 |
US11596940B2 (en) | 2016-07-06 | 2023-03-07 | Oxford Nanopore Technologies Plc | Microfluidic device |
CN108321117A (zh) * | 2017-12-15 | 2018-07-24 | 西安科技大学 | 基于mos管的tsv转接板及其制备方法 |
US11789006B2 (en) | 2019-03-12 | 2023-10-17 | Oxford Nanopore Technologies Plc | Nanopore sensing device, components and method of operation |
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Publication number | Publication date |
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CN102263104B (zh) | 2013-04-17 |
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