JP6806252B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6806252B2 JP6806252B2 JP2019528982A JP2019528982A JP6806252B2 JP 6806252 B2 JP6806252 B2 JP 6806252B2 JP 2019528982 A JP2019528982 A JP 2019528982A JP 2019528982 A JP2019528982 A JP 2019528982A JP 6806252 B2 JP6806252 B2 JP 6806252B2
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- Prior art keywords
- conductive film
- film
- semiconductor device
- interlayer insulating
- terminal portions
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 140
- 239000011229 interlayer Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
[特許文献]
[特許文献1] 特開平4−167449号公報
[特許文献2] 特開2002−16065号公報
[特許文献3] 特開平8−17859号公報
Claims (13)
- 半導体基板と、
前記半導体基板の上方に設けられた第1導電膜と、
前記第1導電膜を覆う層間絶縁膜と、
前記層間絶縁膜の上方に設けられた第2導電膜と、
前記第2導電膜に接合されるワイヤと、
前記層間絶縁膜を貫通して前記第1導電膜と前記第2導電膜とを電気的に連結する複数の貫通端子部と、を備え、
前記第1導電膜は、電流が流れる配線膜と、前記ワイヤの接合部を挟んで前記配線膜と反対側に配置されており電流が流れないダミー膜と、を含んでおり、
前記複数の貫通端子部は、前記配線膜と前記第2導電膜とを電気的に連結する一以上の第1貫通端子部と、前記ダミー膜と前記第2導電膜とを電気的に連結する一以上の第2貫通端子部とを少なくとも含む
半導体装置。 - 半導体基板と、
前記半導体基板の上方において、第1導電膜が設けられていない非形成領域を挟んで、少なくとも前記非形成領域の両側に設けられた前記第1導電膜と、
前記非形成領域に設けられた第1部分、前記非形成領域を挟んだ両側において前記第1導電膜の上方に設けられた第2部分、および前記第1部分と前記第2部分とを連結する段差部を含む層間絶縁膜と、
前記層間絶縁膜の上方に設けられた第2導電膜と、
前記層間絶縁膜の前記第2部分を貫通して前記第1導電膜と前記第2導電膜とを電気的に連結する複数の貫通端子部と、
前記層間絶縁膜の前記第1部分の上方において、前記第2導電膜に接合されるワイヤと、を備え、
前記複数の貫通端子部は、前記ワイヤの接合部を挟んで互いに対向する位置に設けられる一以上の第1貫通端子部および一以上の第2貫通端子部を少なくとも含んでおり、
前記第1導電膜は、電流が流れる配線膜と、前記ワイヤの前記接合部を挟んで前記配線膜と反対側に配置されており電流が流れないダミー膜と、を含んでおり、
前記配線膜は前記第1貫通端子部を介して前記第2導電膜と電気的に連結しており、
前記ダミー膜は前記第2貫通端子部を介して前記第2導電膜と電気的に連結しており、
前記配線膜と前記ダミー膜とは電気的に分離されている、
半導体装置。 - 半導体基板と、
前記半導体基板の上方において、第1導電膜が設けられていない非形成領域を挟んで、少なくとも前記非形成領域の両側に設けられた前記第1導電膜と、
前記非形成領域に設けられた第1部分、前記非形成領域を挟んだ両側において前記第1導電膜の上方に設けられた第2部分、および前記第1部分と前記第2部分とを連結する段差部を含む層間絶縁膜と、
前記層間絶縁膜の上方に設けられた第2導電膜と、
前記層間絶縁膜の前記第2部分を貫通して前記第1導電膜と前記第2導電膜とを電気的に連結する複数の貫通端子部と、
前記層間絶縁膜の前記第1部分の上方において、前記第2導電膜に接合されるワイヤと、を備え、
前記複数の貫通端子部は、前記ワイヤの接合部を挟んで互いに対向する位置に設けられる一以上の第1貫通端子部および一以上の第2貫通端子部を少なくとも含んでおり、
前記第2導電膜は、前記半導体基板のおもて面に平行な長手方向に延伸しており、
前記長手方向に沿って前記複数の貫通端子部が配列される領域と、前記長手方向に直交する短手方向に沿って前記複数の貫通端子部が配列される領域とで、配列される前記貫通端子部の密度が異なる
半導体装置。 - 前記短手方向に沿って前記複数の貫通端子部が配置される領域の方が、前記長手方向に沿って前記複数の貫通端子部が配置される領域より、配置される前記貫通端子部の密度が高い
請求項3に記載の半導体装置。 - 半導体基板と、
前記半導体基板の上方において、第1導電膜が設けられていない非形成領域を挟んで、少なくとも前記非形成領域の両側に設けられた前記第1導電膜と、
前記非形成領域に設けられた第1部分、前記非形成領域を挟んだ両側において前記第1導電膜の上方に設けられた第2部分、および前記第1部分と前記第2部分とを連結する段差部を含む層間絶縁膜と、
前記層間絶縁膜の上方に設けられた第2導電膜と、
前記層間絶縁膜の前記第2部分を貫通して前記第1導電膜と前記第2導電膜とを電気的に連結する複数の貫通端子部と、
前記層間絶縁膜の前記第1部分の上方において、前記第2導電膜に接合されるワイヤと、を備え、
前記複数の貫通端子部は、前記ワイヤの接合部を挟んで互いに対向する位置に設けられる一以上の第1貫通端子部および一以上の第2貫通端子部を少なくとも含んでおり、
前記ワイヤが延伸する方向に対して平行な方向に沿って前記複数の貫通端子部が配列される領域の方が、前記ワイヤが延伸する方向に直交する方向に沿って前記複数の貫通端子部が配列される領域より、配列される前記貫通端子部の密度が高い
半導体装置。 - 前記第1部分の上方における前記第2導電膜の厚みは、前記第2部分の上方における前記第2導電膜の厚みより厚い
請求項2から5の何れか1項に記載の半導体装置。 - 前記第1導電膜は、前記非形成領域を囲むように環状に形成されており、
前記複数の貫通端子部は、前記非形成領域を囲むように環状に配列される
請求項3から5の何れか1項に記載の半導体装置。 - 前記ワイヤおよび前記第2導電膜は、銅を含有する材料で形成されている
請求項1から7の何れか1項に記載の半導体装置。 - 前記第2導電膜の厚みは、1μm以上である
請求項1から8の何れか1項に記載の半導体装置。 - 前記第1導電膜は、溝部を有し、
前記複数の貫通端子部の端部は、それぞれ前記溝部に挿入されている
請求項1から9の何れか1項に記載の半導体装置。 - 前記複数の貫通端子部は、複数列に配列されている
請求項1から10の何れか1項に記載の半導体装置。 - 一の方向に沿って第1列に配列された複数の貫通端子部と、前記一の方向に沿って前記第1列に隣接する第2列に配列された複数の貫通端子部とは、前記一の方向の位置が互い違いになるように配置されている
請求項11に記載の半導体装置。 - 前記貫通端子部は、前記層間絶縁膜に設けられたビアホールに前記第2導電膜の一部が埋め込まれている
請求項1から12の何れか1項に記載の半導体装置。
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