JP6799903B2 - 基板上にタングステンを堆積する方法およびその装置 - Google Patents
基板上にタングステンを堆積する方法およびその装置 Download PDFInfo
- Publication number
- JP6799903B2 JP6799903B2 JP2015095549A JP2015095549A JP6799903B2 JP 6799903 B2 JP6799903 B2 JP 6799903B2 JP 2015095549 A JP2015095549 A JP 2015095549A JP 2015095549 A JP2015095549 A JP 2015095549A JP 6799903 B2 JP6799903 B2 JP 6799903B2
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- reducing agent
- temperature
- substrate
- wcl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 131
- 229910052721 tungsten Inorganic materials 0.000 title claims description 126
- 239000010937 tungsten Substances 0.000 title claims description 126
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 124
- 239000000758 substrate Substances 0.000 title claims description 85
- 238000000151 deposition Methods 0.000 title claims description 79
- 239000003638 chemical reducing agent Substances 0.000 claims description 115
- 230000008569 process Effects 0.000 claims description 64
- 239000002243 precursor Substances 0.000 claims description 42
- 239000001257 hydrogen Substances 0.000 claims description 41
- 229910052739 hydrogen Inorganic materials 0.000 claims description 41
- 238000010899 nucleation Methods 0.000 claims description 39
- 230000006911 nucleation Effects 0.000 claims description 39
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 21
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 claims description 21
- 238000000354 decomposition reaction Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 15
- 150000004756 silanes Chemical class 0.000 claims description 13
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 12
- 229910000085 borane Inorganic materials 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 229910001934 tungsten pentoxide Inorganic materials 0.000 claims description 11
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000007865 diluting Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- WIDQNNDDTXUPAN-UHFFFAOYSA-I tungsten(v) chloride Chemical compound Cl[W](Cl)(Cl)(Cl)Cl WIDQNNDDTXUPAN-UHFFFAOYSA-I 0.000 claims description 3
- 230000000541 pulsatile effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 72
- 230000008021 deposition Effects 0.000 description 47
- 238000005229 chemical vapour deposition Methods 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 21
- 238000000576 coating method Methods 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 15
- 229910052796 boron Inorganic materials 0.000 description 15
- 238000012546 transfer Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000376 reactant Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 10
- 230000001276 controlling effect Effects 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- -1 WCl 2 Chemical class 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical group B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004422 calculation algorithm Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
B2H6(g)→2B(s)+3H2(g)
3WCl5(g)+5B(s)→3W(s)+5BCl3(g)
WCl6(g)+2B(s)→W(s)+2BCl3(g)
開示される実施形態を実装するために、任意の適切なチャンバを使用することができる。例示的な堆積装置は、様々なシステム、例えばLam Research Corp.(米国カリフォルニア州フレモント)から市販されているALTUS(登録商標)およびALTUS(登録商標)Max、または様々な他の市販の処理システムの任意のものを含む。プロセスは、複数の堆積ステーションで並列処理で行なうことができる。
<実験1>
開示される実施形態に従って堆積されるタングステン被膜の堆積速度を測定する実験を行なった。厚さ15〜20Åの核生成層を含む基板を、450℃および60TorrでWCl5およびH2に曝露して、化学気相成長(CVD)によってタングステンを堆積した。厚さ15〜20Åの核生成層を含む別の基板を、450℃および60TorrでWCl6およびB2H6に曝露した。堆積速度の平均を取り、図4にプロットした。
前駆体として六塩化タングステン(WCl6)を使用して堆積されたタングステンフィーチャ充填物のステップカバレッジを評価するためのプロセスを行なった。限界寸法が25nmのフィーチャを有する基板を提供した。開示される実施形態に従って、タングステン核生成および化学気相成長(CVD)を使用してタングステンを堆積した。以下のプロセス条件を使用した。
上述した実施形態は、理解しやすくするために幾分詳細に説明したが、添付の特許請求の範囲の範囲内で特定の変更および修正を施すことができることが明らかであろう。本発明の実施形態のプロセス、システム、および装置を実装する多くの代替法があることに留意されたい。したがって、本発明の実施形態は、例示であり限定ではないものとみなすべきであり、これらの実施形態は、本明細書で提示した詳細に限定されないものとする。例えば、以下の適用例としても実施可能である。
[適用例1]基板上にタングステンを堆積する方法であって、
還元剤および水素に前記基板を曝露させるステップと、
塩化タングステンに前記基板を曝露させて前記タングステンを堆積するステップと
を含み、
水素の流量と還元剤の流量との比が、約10:1〜約100:1の間である
方法。
[適用例2]前記塩化タングステンが、WCl 2 、WCl 4 、WCl 5 、WCl 6 、およびそれらの混合物からなる群から選択される適用例1に記載の方法。
[適用例3]前記還元剤が、ボラン類、シラン類、およびゲルマン類からなる群から選択される適用例1に記載の方法。
[適用例4]前記タングステンが、約450℃〜約650℃の間の温度で堆積される適用例1から適用例3のいずれか一項に記載の方法。
[適用例5]前記還元剤の前記流量が、約100sccm〜約500sccmの間である適用例1から適用例3のいずれか一項に記載の方法。
[適用例6]前記基板が、約0.25〜約10秒の間の期間にわたって前記還元剤に曝露される適用例1から適用例3のいずれか一項に記載の方法。
[適用例7]基板上のフィーチャ内にタングステンを堆積する方法であって、
バルクタングステン層を堆積する前に、希釈された還元剤と五塩化タングステンとに、前記フィーチャを交互に短時間ずつ曝露させることによってタングステン核生成層を形成するステップ
を含む方法。
[適用例8]前記短時間に交互に曝露するサイクル当たりに堆積されるタングステンの量が、少なくとも約100Åである適用例7に記載の方法。
[適用例9]前記還元剤が、ボラン類、シラン類、およびゲルマン類からなる群から選択される適用例7に記載の方法。
[適用例10]前記還元剤が、水素を流すことによって希釈され、水素の流量と還元剤の流量との比が、約10:1〜約100:1の間である適用例7から適用例9のいずれか一項に記載の方法。
[適用例11]さらに、タングステン含有前駆体を使用して、化学気相成長によって前記タングステン核生成層上にバルクタングステン層を堆積するステップを含む適用例7から適用例9のいずれか一項に記載の方法。
[適用例12]前記タングステン含有前駆体が、WF 6 、WCl 2 、WCl 4 、WCl 5 、WCl 6 、およびそれらの混合物からなる群から選択される適用例11に記載の方法。
[適用例13]半導体基板上にタングステンを堆積する方法であって、
五塩化タングステンと還元剤とを短時間曝露させ、前記還元剤の分解を緩和することによって、タングステン核生成層を堆積するステップと、
五塩化タングステンを使用して、化学気相成長によってタングステンバルク層を堆積するステップと
を含む方法。
[適用例14]前記還元剤の分解が、前記還元剤の流れを希釈することによって緩和される適用例13に記載の方法。
[適用例15]前記還元剤の分解が、前記還元剤の流量の少なくとも約10倍の流量で水素ガスを導入することによって緩和される適用例13に記載の方法。
[適用例16]前記還元剤の分解が、前記五塩化タングステンを短時間曝露させるときの温度よりも低い温度で前記還元剤を短時間曝露させることによって緩和される適用例13に記載の方法。
[適用例17]前記還元剤が、シラン類、ボラン類、およびゲルマン類からなる群から選択される適用例13から適用例16のいずれか一項に記載の方法。
[適用例18]基板上にタングステンを堆積する方法であって、
(a)第1の温度で、還元剤および水素に前記基板を曝露させるステップと、
(b)第2の温度で、フッ素を含有しないタングステン前駆体に前記基板を曝露させるステップとを含み、
前記第1の温度が、前記第2の温度よりも低い
方法。
[適用例19]基板を処理するための装置であって、
(a)基板を保持するように構成されたペデスタルを備える少なくとも1つのプロセスチャンバと、
(b)真空に結合するための少なくとも1つの出口と、
(c)1つまたは複数のプロセスガス源に結合された1つまたは複数のプロセスガス入口と、
(d)前記装置での操作を制御するための制御装置と
を備える装置であって、前記制御装置が、機械可読命令を備え、前記機械可読命令が、
(i)還元剤および水素を前記プロセスチャンバに導入し、
(ii)フッ素を含有しないタングステン前駆体を前記プロセスチャンバに導入し、
(iii)第1のステージで操作(i)〜(ii)を繰り返してタングステン核生成層を堆積する
ための命令であり、
操作(i)中、水素の流量と還元剤の流量との比が、約10:1〜約100:1の間である
装置。
[適用例20]前記フッ素を含有しないタングステン前駆体が、WCl 2 、WCl 4 、WCl 5 、WCl 6 、およびそれらの混合物からなる群から選択される適用例19に記載の装置。
Claims (22)
- 基板上にタングステンを堆積する方法であって、
還元剤および水素に前記基板を曝露させるステップと、
塩化タングステンに前記基板を曝露させて前記タングステンを堆積するステップと、
前記還元剤および前記水素に前記基板を曝露させる前記ステップと、前記塩化タングステンに前記基板を曝露させて前記タングステンを堆積する前記ステップとを繰り返すステップと
を含み、
前記還元剤および前記水素に前記基板を曝露させているステップにおいて、前記水素の流量と前記還元剤の流量との比が、10:1〜100:1の間であり、
前記塩化タングステンが、WCl2、WCl4、WCl5、およびそれらの混合物からなる群から選択され、
還元剤および水素に前記基板を曝露させる前記ステップが、第1の温度で実施され、
塩化タングステンに前記基板を曝露させて前記タングステンを堆積する前記ステップが、第2の温度で実施され、
前記第1の温度が、前記第2の温度よりも低い、方法。 - 前記還元剤が、ボラン類、シラン類、およびゲルマン類からなる群から選択される請求項1に記載の方法。
- 前記第1の温度が、250℃〜450℃の間の温度である、または、前記第2の温度が、450℃〜650℃の間の温度である請求項1から請求項2のいずれか一項に記載の方法。
- 前記還元剤の前記流量が、100sccm〜500sccmの間である請求項1から請求項2のいずれか一項に記載の方法。
- 前記基板が、0.25〜10秒の間の期間にわたって前記還元剤に曝露される請求項1から請求項2のいずれか一項に記載の方法。
- 基板上のフィーチャ内にタングステンを堆積する方法であって、
バルクタングステン層を堆積する前に、希釈された還元剤と五塩化タングステンとに、前記フィーチャを交互にパルス的に曝露させることによってタングステン核生成層を形成するステップ
を含み、
前記希釈された還元剤のパルス的な投入が、第1の温度で実施され、
前記五塩化タングステンのパルス的な投入が、第2の温度で実施され、
前記第1の温度が、前記第2の温度よりも低い方法。 - 前記パルス的に交互に曝露するサイクル当たりに堆積されるタングステンの量が、少なくとも100Åである請求項6に記載の方法。
- 前記還元剤が、ボラン類、シラン類、およびゲルマン類からなる群から選択される請求項6に記載の方法。
- 前記還元剤が、水素を流すことによって希釈され、水素の流量と還元剤の流量との比が、10:1〜100:1の間である請求項6から請求項8のいずれか一項に記載の方法。
- さらに、タングステン含有前駆体を使用して、前記タングステン核生成層上にバルクタングステン層を堆積するステップを含む請求項6から請求項8のいずれか一項に記載の方法。
- 前記タングステン含有前駆体が、WF6、WCl2、WCl4、WCl5、WCl6、およびそれらの混合物からなる群から選択される請求項10に記載の方法。
- 半導体基板上にタングステンを堆積する方法であって、
五塩化タングステンと還元剤とをパルス的に曝露させ、前記還元剤の分解を緩和することによって、タングステン核生成層を堆積するステップと、
五塩化タングステンを使用して、タングステンバルク層を堆積するステップと
を含み、
前記還元剤のパルス的な投入が、第1の温度で実施され、
前記五塩化タングステンのパルス的な投入が、第2の温度で実施され、
前記第1の温度が、前記第2の温度よりも低い方法。 - 前記還元剤の分解が、前記還元剤の流れを希釈することによって緩和される請求項12に記載の方法。
- 前記還元剤の分解が、前記還元剤の流量の少なくとも10倍の流量で水素ガスを導入することによって緩和される請求項12に記載の方法。
- 半導体基板上にタングステンを堆積する方法であって、
五塩化タングステンと還元剤とをパルス的に曝露させ、前記還元剤の分解を緩和することによって、タングステン核生成層を堆積するステップと、
五塩化タングステンを使用して、タングステンバルク層を堆積するステップとを含み、
前記還元剤の分解が、前記五塩化タングステンをパルス的に曝露させるときの温度よりも低い温度で前記還元剤をパルス的に曝露させることによって緩和される、方法。 - 前記還元剤がシラン類、ボラン類、およびゲルマン類からなる群から選択される請求項12から請求項15のいずれか一項に記載の方法。
- 基板上にタングステンを堆積する方法であって、
(a)第1の温度で、還元剤および水素に前記基板を曝露させるステップと、
(b)第2の温度で、塩化タングステン前駆体に前記基板を曝露させるステップとを含み、
前記第1の温度が、前記第2の温度よりも低い
方法。 - 基板を処理するための装置であって、
(a)基板を保持するように構成された加熱式ペデスタルを備える少なくとも1つのプロセスチャンバと、
(b)真空に結合するための少なくとも1つの出口と、
(c)1つまたは複数のプロセスガス源に結合された1つまたは複数のプロセスガス入口と、
(d)前記装置での操作を制御するための制御装置と
を備える装置であって、前記制御装置が、機械可読命令を備え、前記機械可読命令が、
(i)還元剤および水素を前記プロセスチャンバに導入させ、
(ii)フッ素を含有しないタングステン前駆体を前記プロセスチャンバに導入させ、
(iii)第1のステージで操作(i)〜(ii)を繰り返させてタングステン核生成層を堆積するための命令であり、
操作(i)中、水素の流量と還元剤の流量との比が、10:1〜100:1の間であり、
前記タングステン前駆体が、WCl2、WCl4、WCl5、およびそれらの混合物からなる群から選択され、
前記還元剤および水素を導入させる前記ステップが、第1の温度で実施され、
前記フッ素を含有しないタングステン前駆体を導入させる前記ステップが、第2の温度で実施され、
前記第1の温度が、前記第2の温度よりも低い、装置。 - 前記還元剤が、ボラン類、シラン類、およびゲルマン類からなる群から選択される、請求項17に記載の方法。
- 前記第1の温度が、250℃〜450℃の間の温度である、または、前記第2の温度が、450℃〜650℃の間の温度である請求項17に記載の方法。
- 前記還元剤の流量が、100sccm〜500sccmの間である請求項17に記載の方法。
- 前記基板が、0.25〜10秒の間の期間にわたって前記還元剤に曝露される請求項17に記載の方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461991356P | 2014-05-09 | 2014-05-09 | |
US61/991,356 | 2014-05-09 | ||
US201462075092P | 2014-11-04 | 2014-11-04 | |
US62/075,092 | 2014-11-04 | ||
US14/703,732 US9595470B2 (en) | 2014-05-09 | 2015-05-04 | Methods of preparing tungsten and tungsten nitride thin films using tungsten chloride precursor |
US14/703,732 | 2015-05-04 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015221940A JP2015221940A (ja) | 2015-12-10 |
JP2015221940A5 JP2015221940A5 (ja) | 2018-06-14 |
JP6799903B2 true JP6799903B2 (ja) | 2020-12-16 |
Family
ID=54368489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015095549A Active JP6799903B2 (ja) | 2014-05-09 | 2015-05-08 | 基板上にタングステンを堆積する方法およびその装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9595470B2 (ja) |
JP (1) | JP6799903B2 (ja) |
KR (2) | KR20150128615A (ja) |
CN (1) | CN105097446A (ja) |
TW (1) | TWI730942B (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
JP6416679B2 (ja) * | 2015-03-27 | 2018-10-31 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
US9595473B2 (en) | 2015-06-01 | 2017-03-14 | International Business Machines Corporation | Critical dimension shrink through selective metal growth on metal hardmask sidewalls |
CN106328500B (zh) * | 2015-07-02 | 2019-11-05 | 无锡华润上华科技有限公司 | 钨膜的沉积方法 |
US9768177B2 (en) * | 2015-08-04 | 2017-09-19 | Micron Technology, Inc. | Method of forming conductive material of a buried transistor gate line and method of forming a buried transistor gate line |
JP6710089B2 (ja) * | 2016-04-04 | 2020-06-17 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
US10214807B2 (en) * | 2016-06-02 | 2019-02-26 | Lam Research Corporation | Atomic layer deposition of tungsten for enhanced fill and reduced substrate attack |
JP6793243B2 (ja) * | 2016-07-14 | 2020-12-02 | インテグリス・インコーポレーテッド | MoOCl4を使用することによるCVD Mo堆積 |
US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US9991362B2 (en) * | 2016-09-30 | 2018-06-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including tungsten gate and manufacturing method thereof |
WO2018105220A1 (ja) | 2016-12-05 | 2018-06-14 | Jx金属株式会社 | 高純度五塩化タングステン及びその製造方法 |
EP3573929A1 (de) | 2017-01-25 | 2019-12-04 | Umicore AG & Co. KG | Verfahren zur reduktion von metallhalogeniden |
CN118366851A (zh) | 2017-04-10 | 2024-07-19 | 朗姆研究公司 | 含钼的低电阻率的膜 |
US10460987B2 (en) * | 2017-05-09 | 2019-10-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package device with integrated antenna and manufacturing method thereof |
KR102474876B1 (ko) | 2017-06-15 | 2022-12-07 | 삼성전자주식회사 | 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법 |
US10199267B2 (en) * | 2017-06-30 | 2019-02-05 | Lam Research Corporation | Tungsten nitride barrier layer deposition |
SG11202001268TA (en) * | 2017-08-14 | 2020-03-30 | Lam Res Corp | Metal fill process for three-dimensional vertical nand wordline |
US11807652B2 (en) | 2017-08-21 | 2023-11-07 | Adeka Corporation | Tungsten compound, raw material for thin film formation and method for producing thin film |
WO2019099997A1 (en) * | 2017-11-20 | 2019-05-23 | Lam Research Corporation | Self-limiting growth |
JP7018748B2 (ja) * | 2017-11-28 | 2022-02-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜条件の算出方法 |
JP7072399B2 (ja) | 2018-02-21 | 2022-05-20 | 東京エレクトロン株式会社 | タングステン膜の成膜方法、成膜システム及び記憶媒体 |
US10710896B2 (en) | 2018-04-30 | 2020-07-14 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tungsten pentachloride conditioning and crystalline phase manipulation |
US10899630B2 (en) | 2018-04-30 | 2021-01-26 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude | Tungsten pentachloride conditioning and crystalline phase manipulation |
JP2021523292A (ja) * | 2018-05-03 | 2021-09-02 | ラム リサーチ コーポレーションLam Research Corporation | 3d nand構造内にタングステンおよび他の金属を堆積させる方法 |
KR20210081436A (ko) | 2018-11-19 | 2021-07-01 | 램 리써치 코포레이션 | 텅스텐을 위한 몰리브덴 템플릿들 |
KR20210092840A (ko) | 2018-12-14 | 2021-07-26 | 램 리써치 코포레이션 | 3d nand 구조체 상의 원자 층 증착 |
CN113195783A (zh) * | 2018-12-19 | 2021-07-30 | 恩特格里斯公司 | 在还原共反应剂存在下沉积钨或钼层的方法 |
CN116970925A (zh) | 2019-01-28 | 2023-10-31 | 朗姆研究公司 | 金属膜的沉积 |
JP7362258B2 (ja) * | 2019-02-08 | 2023-10-17 | 東京エレクトロン株式会社 | 基板処理方法及び成膜システム |
US20220139717A1 (en) | 2019-02-25 | 2022-05-05 | Board Of Regents, The University Of Texas System | Large area metrology and process control for anisotropic chemical etching |
SG11202109796QA (en) | 2019-03-11 | 2021-10-28 | Lam Res Corp | Precursors for deposition of molybdenum-containing films |
US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
WO2020236749A1 (en) * | 2019-05-22 | 2020-11-26 | Lam Research Corporation | Nucleation-free tungsten deposition |
KR20220047333A (ko) | 2019-08-12 | 2022-04-15 | 램 리써치 코포레이션 | 텅스텐 증착 |
US20210384035A1 (en) * | 2020-06-04 | 2021-12-09 | Applied Materials, Inc. | Fluorine-Free Tungsten ALD And Tungsten Selective CVD For Dielectrics |
KR20240004913A (ko) * | 2021-05-07 | 2024-01-11 | 엔테그리스, 아이엔씨. | 몰리브데넘 또는 텅스텐 재료를 침착시키는 방법 |
TWI825674B (zh) * | 2022-01-19 | 2023-12-11 | 南亞科技股份有限公司 | 半導體元件的製備方法 |
US11842925B2 (en) | 2022-01-19 | 2023-12-12 | Nanya Technology Corporation | Method for fabricating conductive feature and semiconductor device |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61224313A (ja) * | 1985-03-29 | 1986-10-06 | Hitachi Ltd | 気相薄膜成長方法 |
JP2829143B2 (ja) * | 1991-03-25 | 1998-11-25 | シャープ株式会社 | 半導体装置の製造方法 |
CN1115723C (zh) * | 1996-11-15 | 2003-07-23 | 三星电子株式会社 | 氮化钨层制造方法及使用同样原理的金属连线制造方法 |
US6162715A (en) * | 1997-06-30 | 2000-12-19 | Applied Materials, Inc. | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
US7405158B2 (en) * | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US20030190424A1 (en) | 2000-10-20 | 2003-10-09 | Ofer Sneh | Process for tungsten silicide atomic layer deposition |
US20020190379A1 (en) * | 2001-03-28 | 2002-12-19 | Applied Materials, Inc. | W-CVD with fluorine-free tungsten nucleation |
US9076843B2 (en) * | 2001-05-22 | 2015-07-07 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US7211144B2 (en) * | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
TWI493058B (zh) * | 2007-05-15 | 2015-07-21 | Applied Materials Inc | 鎢材料的原子層沈積法 |
KR101559425B1 (ko) | 2009-01-16 | 2015-10-13 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US8119527B1 (en) * | 2009-08-04 | 2012-02-21 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US9034768B2 (en) * | 2010-07-09 | 2015-05-19 | Novellus Systems, Inc. | Depositing tungsten into high aspect ratio features |
US20120003833A1 (en) * | 2010-07-01 | 2012-01-05 | Applied Materials, Inc. | Methods for forming tungsten-containing layers |
KR101990051B1 (ko) * | 2012-08-31 | 2019-10-01 | 에스케이하이닉스 주식회사 | 무불소텅스텐 배리어층을 구비한 반도체장치 및 그 제조 방법 |
US8853080B2 (en) * | 2012-09-09 | 2014-10-07 | Novellus Systems, Inc. | Method for depositing tungsten film with low roughness and low resistivity |
US9637395B2 (en) * | 2012-09-28 | 2017-05-02 | Entegris, Inc. | Fluorine free tungsten ALD/CVD process |
US9230815B2 (en) | 2012-10-26 | 2016-01-05 | Appled Materials, Inc. | Methods for depositing fluorine/carbon-free conformal tungsten |
US20150348840A1 (en) | 2014-05-31 | 2015-12-03 | Lam Research Corporation | Methods of filling high aspect ratio features with fluorine free tungsten |
-
2015
- 2015-05-04 US US14/703,732 patent/US9595470B2/en active Active
- 2015-05-07 TW TW104114532A patent/TWI730942B/zh active
- 2015-05-08 KR KR1020150064578A patent/KR20150128615A/ko not_active IP Right Cessation
- 2015-05-08 JP JP2015095549A patent/JP6799903B2/ja active Active
- 2015-05-11 CN CN201510236179.5A patent/CN105097446A/zh active Pending
-
2023
- 2023-03-31 KR KR1020230043083A patent/KR102641077B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20230050290A (ko) | 2023-04-14 |
US9595470B2 (en) | 2017-03-14 |
KR102641077B1 (ko) | 2024-02-27 |
KR20150128615A (ko) | 2015-11-18 |
CN105097446A (zh) | 2015-11-25 |
TWI730942B (zh) | 2021-06-21 |
TW201606121A (zh) | 2016-02-16 |
JP2015221940A (ja) | 2015-12-10 |
US20150325475A1 (en) | 2015-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6799903B2 (ja) | 基板上にタングステンを堆積する方法およびその装置 | |
US10546751B2 (en) | Forming low resistivity fluorine free tungsten film without nucleation | |
JP2022510428A (ja) | ボイドフリーの低応力充填 | |
TW202020203A (zh) | 純金屬膜的沉積 | |
JP2015232177A (ja) | フッ素非含有タングステンで高アスペクト比フィーチャを充填する方法 | |
CN113366144B (zh) | 金属膜的沉积 | |
CN109216205B (zh) | 氮化钨阻挡层沉积 | |
JP2022513479A (ja) | 3d nand構造上の原子層堆積 | |
JP2022180423A (ja) | タングステン用モリブデンテンプレート | |
JP2022522226A (ja) | 高ステップカバレッジのタングステン堆積 | |
KR20200127261A (ko) | 탄소 막들의 원자 층 증착 | |
TW202239998A (zh) | 低電阻接觸窗及互連線 | |
JP2022529056A (ja) | 原子層堆積中の急速フラッシュパージング | |
JP2024534326A (ja) | 半導体処理の間のプロセスガスランプ | |
TW202401671A (zh) | 高縱橫比3d nand結構中的鎢字元線填充 | |
CN112218975A (zh) | 减少跨膜界面的扩散 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180502 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180502 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190115 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190122 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190415 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190719 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191203 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200602 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201027 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201124 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6799903 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |