JP6764681B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP6764681B2 JP6764681B2 JP2016094586A JP2016094586A JP6764681B2 JP 6764681 B2 JP6764681 B2 JP 6764681B2 JP 2016094586 A JP2016094586 A JP 2016094586A JP 2016094586 A JP2016094586 A JP 2016094586A JP 6764681 B2 JP6764681 B2 JP 6764681B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- conductor
- insulator
- oxide semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015096317 | 2015-05-11 | ||
| JP2015096317 | 2015-05-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016213468A JP2016213468A (ja) | 2016-12-15 |
| JP2016213468A5 JP2016213468A5 (enExample) | 2019-06-13 |
| JP6764681B2 true JP6764681B2 (ja) | 2020-10-07 |
Family
ID=57277718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016094586A Expired - Fee Related JP6764681B2 (ja) | 2015-05-11 | 2016-05-10 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US9966473B2 (enExample) |
| JP (1) | JP6764681B2 (enExample) |
| TW (1) | TWI693719B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9917209B2 (en) | 2015-07-03 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including step of forming trench over semiconductor |
| US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9954003B2 (en) * | 2016-02-17 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JPWO2017158465A1 (ja) * | 2016-03-18 | 2019-02-14 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US10937783B2 (en) | 2016-11-29 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JPWO2018178793A1 (ja) * | 2017-03-29 | 2020-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| JP6965833B2 (ja) * | 2017-09-21 | 2021-11-10 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法 |
| CN107732031A (zh) * | 2017-09-29 | 2018-02-23 | 京东方科技集团股份有限公司 | 有机发光显示面板的制备方法及有机发光显示面板 |
| US11177176B2 (en) * | 2017-10-20 | 2021-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US10712804B2 (en) | 2017-12-19 | 2020-07-14 | Intel Corporation | Dynamic selection of display resolution |
| JP7158414B2 (ja) * | 2017-12-27 | 2022-10-21 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| KR20240023707A (ko) * | 2018-01-24 | 2024-02-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| CN111656530A (zh) * | 2018-01-24 | 2020-09-11 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| WO2019155318A1 (ja) * | 2018-02-08 | 2019-08-15 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP7155172B2 (ja) * | 2018-02-09 | 2022-10-18 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| WO2019166906A1 (ja) * | 2018-02-28 | 2019-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP7046692B2 (ja) * | 2018-04-17 | 2022-04-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN111971796B (zh) * | 2018-04-20 | 2024-07-19 | 索尼公司 | 摄像器件、堆叠式摄像器件和固态摄像装置 |
| JP7483606B2 (ja) * | 2018-07-06 | 2024-05-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20240169720A (ko) * | 2018-08-09 | 2024-12-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치 |
| CN113330553A (zh) * | 2019-01-29 | 2021-08-31 | 株式会社半导体能源研究所 | 半导体装置以及半导体装置的制造方法 |
| WO2020250083A1 (ja) * | 2019-06-14 | 2020-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| DE102020102876B4 (de) | 2020-02-05 | 2023-08-10 | Infineon Technologies Ag | Elektronisches Bauelement, Herstellungsverfahren dafür und Verfahren zur Herstellung eines elektronischen Moduls dieses aufweisend mittels eines Sinterverfahrens mit einer Opferschicht auf der Rückseitenmetallisierung eines Halbleiterdies |
| KR102881994B1 (ko) * | 2020-09-10 | 2025-11-07 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
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-
2016
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| US20180190826A1 (en) | 2018-07-05 |
| US9966473B2 (en) | 2018-05-08 |
| US10546958B2 (en) | 2020-01-28 |
| JP2016213468A (ja) | 2016-12-15 |
| US20160336454A1 (en) | 2016-11-17 |
| TWI693719B (zh) | 2020-05-11 |
| TW201642472A (zh) | 2016-12-01 |
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