TWI693719B - 半導體裝置的製造方法 - Google Patents
半導體裝置的製造方法 Download PDFInfo
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- TWI693719B TWI693719B TW105113548A TW105113548A TWI693719B TW I693719 B TWI693719 B TW I693719B TW 105113548 A TW105113548 A TW 105113548A TW 105113548 A TW105113548 A TW 105113548A TW I693719 B TWI693719 B TW I693719B
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- Prior art keywords
- transistor
- conductor
- insulator
- semiconductor
- oxide semiconductor
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
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- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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| US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9954003B2 (en) * | 2016-02-17 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JPWO2017158465A1 (ja) * | 2016-03-18 | 2019-02-14 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| US10937783B2 (en) | 2016-11-29 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JPWO2018178793A1 (ja) * | 2017-03-29 | 2020-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| JP6965833B2 (ja) * | 2017-09-21 | 2021-11-10 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法 |
| CN107732031A (zh) * | 2017-09-29 | 2018-02-23 | 京东方科技集团股份有限公司 | 有机发光显示面板的制备方法及有机发光显示面板 |
| US11177176B2 (en) * | 2017-10-20 | 2021-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US10712804B2 (en) | 2017-12-19 | 2020-07-14 | Intel Corporation | Dynamic selection of display resolution |
| JP7158414B2 (ja) * | 2017-12-27 | 2022-10-21 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| KR20240023707A (ko) * | 2018-01-24 | 2024-02-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| CN111656530A (zh) * | 2018-01-24 | 2020-09-11 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
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| CN111971796B (zh) * | 2018-04-20 | 2024-07-19 | 索尼公司 | 摄像器件、堆叠式摄像器件和固态摄像装置 |
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| CN113330553A (zh) * | 2019-01-29 | 2021-08-31 | 株式会社半导体能源研究所 | 半导体装置以及半导体装置的制造方法 |
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| DE102020102876B4 (de) | 2020-02-05 | 2023-08-10 | Infineon Technologies Ag | Elektronisches Bauelement, Herstellungsverfahren dafür und Verfahren zur Herstellung eines elektronischen Moduls dieses aufweisend mittels eines Sinterverfahrens mit einer Opferschicht auf der Rückseitenmetallisierung eines Halbleiterdies |
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| TW201515230A (zh) * | 2013-09-19 | 2015-04-16 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
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| US20180190826A1 (en) | 2018-07-05 |
| US9966473B2 (en) | 2018-05-08 |
| US10546958B2 (en) | 2020-01-28 |
| JP2016213468A (ja) | 2016-12-15 |
| US20160336454A1 (en) | 2016-11-17 |
| JP6764681B2 (ja) | 2020-10-07 |
| TW201642472A (zh) | 2016-12-01 |
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