JP2016213468A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2016213468A JP2016213468A JP2016094586A JP2016094586A JP2016213468A JP 2016213468 A JP2016213468 A JP 2016213468A JP 2016094586 A JP2016094586 A JP 2016094586A JP 2016094586 A JP2016094586 A JP 2016094586A JP 2016213468 A JP2016213468 A JP 2016213468A
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- transistor
- conductor
- insulator
- oxide semiconductor
- semiconductor
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Abstract
【解決手段】基板上に半導体、および導電体を形成し、導電体上に犠牲層を形成し、犠牲層を覆って絶縁体を形成した後、該絶縁体の上面を除去することにより、犠牲層の上面を露出する。該犠牲層、および導電体の犠牲層と重なる領域を除去し、ソース領域及びドレイン領域、および開口部を形成する。続いて、該開口部に、ゲート絶縁体、ゲート電極を形成する。
【選択図】図5
Description
<半導体装置の構成例1>
本実施の形態では、半導体装置の作製方法の一例について、図1乃至図5を用いて説明する。
<半導体装置の変形例1>
本実施の形態では、トランジスタ100の変形例について、図6乃至図10を用いて説明する。以下に、半導体装置の作製方法の一例を図6乃至9を参照して説明する。なお、実施の形態1に示すトランジスタ100と同符号を付記した構成要素は、実施の形態1に示すトランジスタを参酌することができる。
<半導体装置の変形例2>
本実施の形態では、トランジスタ100の変形例について、図11乃至図15を用いて説明する。以下に、半導体装置の作製方法の一例を図11乃至図15を参照して説明する。なお、実施の形態1に示すトランジスタ100と、同様の機能を有する構成は実施の形態1に示すトランジスタ100と同符号を付記し、実施の形態1に示すトランジスタを参酌することができる。
<半導体装置の変形例3>
本実施の形態では、トランジスタ100の変形例について、図16乃至図20を用いて説明する。以下に、半導体装置の作製方法の一例を図16乃至図20を参照して説明する。なお、実施の形態1に示すトランジスタ100と、同様の機能を有する構成は実施の形態1に示すトランジスタ100と同符号を付記し、実施の形態1に示すトランジスタを参酌することができる。
<半導体装置の変形例4>
本実施の形態では、トランジスタ100の変形例について、図21乃至図25を用いて説明する。以下に、半導体装置の作製方法の一例を図21乃至図25を参照して説明する。なお、実施の形態1に示すトランジスタ100と、同様の機能を有する構成は実施の形態1に示すトランジスタ100と同符号を付記し、実施の形態1に示すトランジスタを参酌することができる。
<酸化物半導体の構造>
以下では、酸化物半導体の構造について説明する。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
本実施の形態においては、本発明の一態様に係るトランジスタなどを利用した半導体装置の回路の一例について説明する。
図32(A)に示す回路図は、pチャネル型のトランジスタ2200とnチャネル型のトランジスタ2100を直列に接続し、かつそれぞれのゲートを接続した、いわゆるCMOSインバータの構成を示している。
図33は、図32(A)に対応する半導体装置の断面図である。図33に示す半導体装置は、トランジスタ2200と、トランジスタ2100と、を有する。また、トランジスタ2100は、トランジスタ2200の上方に配置する。なお、トランジスタ2100として、上述の実施の形態において記載したトランジスタを用いることができる。よって、トランジスタ2100については、適宜上述したトランジスタについての記載を参酌することができる。
また図32(B)に示す回路図は、トランジスタ2100とトランジスタ2200のそれぞれのソースとドレインを接続した構成を示している。このような構成とすることで、いわゆるCMOSアナログスイッチとして機能させることができる。
本発明の一態様に係るトランジスタを用いた、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図36に示す。
図37は、図36(A)に対応する半導体装置の断面図である。図37に示す半導体装置は、トランジスタ3200と、トランジスタ3300と、容量素子3400と、を有する。また、トランジスタ3300および容量素子3400は、トランジスタ3200の上方に配置する。なお、トランジスタ3300としては、上述したトランジスタ2100についての記載を参照する。また、トランジスタ3200としては、図33に示したトランジスタ2200についての記載を参照する。なお、図33では、トランジスタ2200がpチャネル型トランジスタである場合について説明したが、トランジスタ3200がnチャネル型トランジスタであっても構わない。
図36(B)に示す半導体装置は、トランジスタ3200を有さない点で図36(A)に示した半導体装置と異なる。この場合も図36(A)に示した半導体装置と同様の動作により情報の書き込みおよび保持動作が可能である。
図36(A)に示す半導体装置(記憶装置)の変形例について、図40に示す回路図を用いて説明する。
また本発明の一態様は、FPGA(Field Programmable Gate Array)などのLSIにも適用可能である。
本実施の形態においては、本発明の一態様に係るトランジスタなどを利用した撮像装置の一例について説明する。
図43(A)は、本発明の一態様に係る撮像装置200の例を示す平面図である。撮像装置200は、画素部210と、画素部210を駆動するための周辺回路260と、周辺回路270、周辺回路280と、周辺回路290と、を有する。画素部210は、p行q列(pおよびqは2以上の整数)のマトリクス状に配置された複数の画素211を有する。周辺回路260、周辺回路270、周辺回路280および周辺回路290は、それぞれ複数の画素211に接続し、複数の画素211を駆動するための信号を供給する機能を有する。なお、本明細書等において、周辺回路260、周辺回路270、周辺回路280および周辺回路290などの全てを指して「周辺回路」または「駆動回路」と呼ぶ場合がある。例えば、周辺回路260は周辺回路の一部といえる。
撮像装置200が有する1つの画素211を複数の副画素212で構成し、それぞれの副画素212に特定の波長域の光を透過するフィルタ(カラーフィルタ)を組み合わせることで、カラー画像表示を実現するための情報を取得することができる。
以下では、シリコンを用いたトランジスタと、酸化物半導体を用いたトランジスタと、を用いて画素を構成する一例について説明する。
本実施の形態においては、本発明の一態様に係るトランジスタや上述した記憶装置などの半導体装置を含むCPUの一例について説明する。
図48は、上述したトランジスタを一部に用いたCPUの一例の構成を示すブロック図である。
本実施の形態においては、本発明の一態様に係るトランジスタなどを利用した表示装置について、図50および図51を用いて説明する。
表示装置に用いられる表示素子としては液晶素子(液晶表示素子ともいう。)、発光素子(発光表示素子ともいう。)などを用いることができる。発光素子は、電流または電圧によって輝度が制御される素子をその範疇に含んでおり、具体的には無機EL(Electroluminescence)、有機ELなどを含む。以下では、表示装置の一例としてEL素子を用いた表示装置(EL表示装置)および液晶素子を用いた表示装置(液晶表示装置)について説明する。
本実施の形態においては、本発明の一態様に係るトランジスタなどを利用した電子機器について説明する。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図52に示す。
100 トランジスタ
101 基板
110 絶縁体
120 絶縁体
130 酸化物半導体
130a 酸化物半導体
130A 酸化物半導体
130b 酸化物半導体
130B 酸化物半導体
130c 酸化物半導体
130C 酸化物半導体
131a 領域
131b 領域
135 レジストマスク
140 導電体
140a 導電体
140A 導電体
140b 導電体
145 レジストマスク
150 絶縁体
150A 絶縁体
160 導電体
160A 導電体
165 導電体
180 絶縁体
180A 絶縁体
190 犠牲層
190A 膜
190B 犠牲層
195 レジストマスク
200 撮像装置
201 スイッチ
202 スイッチ
203 スイッチ
210 画素部
211 画素
212 副画素
212B 副画素
212G 副画素
212R 副画素
220 光電変換素子
230 画素回路
231 配線
247 配線
248 配線
249 配線
250 配線
253 配線
254 フィルタ
254B フィルタ
254G フィルタ
254R フィルタ
255 レンズ
256 光
257 配線
260 周辺回路
270 周辺回路
280 周辺回路
290 周辺回路
291 光源
300 シリコン基板
310 層
320 層
330 層
340 層
351 トランジスタ
352 トランジスタ
353 トランジスタ
360 フォトダイオード
361 アノード
363 低抵抗領域
370 プラグ
371 配線
372 配線
373 配線
380 絶縁体
450 半導体基板
452 絶縁体
454 導電体
456 領域
460 領域
462 絶縁体
464 絶縁体
466 絶縁体
468 絶縁体
472a 領域
472b 領域
474a 導電体
474b 導電体
474c 導電体
476a 導電体
476b 導電体
478a 導電体
478b 導電体
478c 導電体
480a 導電体
480b 導電体
480c 導電体
489 絶縁体
490 絶縁体
492 絶縁体
493 絶縁体
494 絶縁体
495 絶縁体
496a 導電体
496b 導電体
496c 導電体
496d 導電体
496e 導電体
498a 導電体
498b 導電体
498c 導電体
504 導電体
507a 導電体
507b 導電体
511 絶縁体
514 導電体
515 導電体
521 ルーティングスイッチエレメント
522 ロジックエレメント
523 コンフィギュレーションメモリ
524 ルックアップテーブル
525 レジスタ
526 セレクタ
527 コンフィギュレーションメモリ
700 基板
701 絶縁体
702 絶縁体
703a 絶縁体
703b 半導体
704 導電体
705 導電体
706 絶縁体
707a 導電体
707b 導電体
710 絶縁体
714a 導電体
714b 絶縁体
714c 導電体
719 発光素子
720 絶縁体
721 絶縁体
731 端子
732 FPC
733a 配線
734 シール材
735 駆動回路
736 駆動回路
737 画素
741 トランジスタ
742 容量素子
743 スイッチ素子
744 信号線
750 基板
751 トランジスタ
752 容量素子
753 液晶素子
754 走査線
755 信号線
781 導電体
782 発光層
783 導電体
784 隔壁
791 導電体
792 絶縁体
793 液晶層
794 絶縁体
795 スペーサ
796 導電体
797 基板
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2100 トランジスタ
2200 トランジスタ
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4001 配線
4003 配線
4005 配線
4006 配線
4007 配線
4008 配線
4009 配線
4021 層
4022 層
4023 層
4100 トランジスタ
4200 トランジスタ
4300 トランジスタ
4400 トランジスタ
4500 容量素子
4600 容量素子
Claims (5)
- 半導体および第1の導電体を、基板上に形成し、
前記第1の導電体上に犠牲層を形成し、
前記半導体、前記第1の導電体、および前記犠牲層を覆って第1の絶縁体を形成した後、
機械的化学的研磨法を用いて、前記犠牲層の上面を露出し、
前記犠牲層を除去することにより、前記第1の絶縁体に、前記第1の導電体の一部を露出する開口部を形成し、
前記第1の導電体の一部を除去することにより、第1の電極、および第2の電極を形成し、
前記第1の絶縁体、および前記開口部を覆って、第2の絶縁体を形成し、
前記第2の絶縁体上に第2の導電体を形成し、
前記第2の導電体の一部を除去することを特徴とする半導体装置の作製方法。 - 請求項1において、前記第2の導電体の一部の除去は、機械的化学的研磨法を用いることを特徴とする半導体装置の作製方法。
- 半導体を基板上に形成し、
前記半導体上に犠牲層を形成し、
前記半導体の一部に不純物を添加することにより、低抵抗領域を形成し、
前記半導体、および前記犠牲層を覆って第1の絶縁体を形成した後、
機械的化学的研磨法を用いて、前記犠牲層の上面を露出し、
前記犠牲層を除去することにより、前記第1の絶縁体に、前記半導体の一部を露出する開口部を形成し、
前記第1の絶縁体、および前記開口部を覆って、第2の絶縁体を形成し、
前記第2の絶縁体上に導電体を形成し、
前記導電体の一部を除去することを特徴とする半導体装置の作製方法。 - 請求項3において、前記導電体の一部の除去は、機械的化学的研磨法を用いることを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項4のいずれか一において、ウェットエッチング法を用いて、前記犠牲層を除去することを特徴とする半導体装置の作製方法。
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US20160336454A1 (en) | 2016-11-17 |
TWI693719B (zh) | 2020-05-11 |
US20180190826A1 (en) | 2018-07-05 |
US9966473B2 (en) | 2018-05-08 |
US10546958B2 (en) | 2020-01-28 |
TW201642472A (zh) | 2016-12-01 |
JP6764681B2 (ja) | 2020-10-07 |
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