JP2016157938A - 半導体装置、および半導体装置の作成方法 - Google Patents
半導体装置、および半導体装置の作成方法 Download PDFInfo
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- JP2016157938A JP2016157938A JP2016029517A JP2016029517A JP2016157938A JP 2016157938 A JP2016157938 A JP 2016157938A JP 2016029517 A JP2016029517 A JP 2016029517A JP 2016029517 A JP2016029517 A JP 2016029517A JP 2016157938 A JP2016157938 A JP 2016157938A
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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Abstract
【解決手段】基板上に酸化物半導体と、酸化物半導体と接する第1の電極及び第2の電極と、酸化物半導体、第1の電極、第2の電極上の絶縁体と、絶縁体上の第3の電極と、を有し、酸化物半導体は、第1の電極と重なる第1の領域、第2の電極と重なる第2の領域、及び第3の電極と重なる第3の領域を有し、第1の領域と、第3の領域とは重なる第4の領域を有し、第2の領域と、第3の領域とは重なる第5の領域を有し、第1の電極の上面および第2の電極の上面は、酸化物半導体の上面と同一平面、または同一平面よりも酸化物半導体側に設けられている。
【選択図】図1
Description
本実施の形態では、半導体装置の一形態を、図1乃至図3を用いて説明する。
図1(A)は、トランジスタ100の上面図の一例を示す。なお、簡単のため、図1(A)において一部の膜は省略されている。また、図1(B)は図1(A)に示す一点鎖線X1−X2に対応する断面図であり、図1(C)はY1−Y2に対応する断面図である。
図2(A)は、半導体装置の構成例1とは異なるトランジスタ100の上面図の一例を示す。なお、簡単のため、図2(A)において一部の膜は省略されている。また、図2(B)は図2(A)に示す一点鎖線X1−X2に対応する断面図であり、図2(C)はY1−Y2に対応する断面図である。また、図2(D)は領域190の拡大図である。
図3には、トランジスタ100の変形例の一例の断面図を示す。
<酸化物半導体の構造>
以下では、酸化物半導体の構造について説明する。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
本実施の形態では、本発明の一態様のトランジスタを利用した半導体装置の構成の一例について図面を参照して説明する。
図10(A)及び図10(B)に本発明の一態様の半導体装置の断面図を示す。図10(A)及び図10(B)に示す半導体装置は、下部に第1の半導体材料を用いたトランジスタ2200を有し、上部に第2の半導体材料を用いたトランジスタ2100を有している。なお、図10(A)がトランジスタのチャネル長方向の断面、図10(B)チャネル幅方向の断面である。
上記構成において、トランジスタ2100やトランジスタ2200の電極の接続構成を異ならせることにより、様々な回路を構成することができる。以下では、本発明の一態様の半導体装置を用いることにより実現できる回路構成の例を説明する。
本発明の一態様であるトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図13に示す。なお、図13(B)は図13(A)を回路図で表したものである。
以下では、上述したトランジスタや上述した記憶装置などの半導体装置を含むCPUについて説明する。
本実施の形態では、本発明の一態様に係る表示装置について、図16および図17を用いて説明する。
本実施の形態では、本発明の一態様のトランジスタを利用した半導体装置の構成の一例について図面を参照して説明する。
101 基板
110 絶縁体
120 絶縁層
130 酸化物
130a 絶縁体
130b 半導体
130c 絶縁体
140 電極
150 電極
160 絶縁体
170 電極
175 電極
190 領域
700 基板
704 導電体
706a 半導体
706b 半導体
706c 半導体
712a 絶縁体
712b 絶縁体
714a 導電体
714b 導電体
714c 導電体
716a 導電体
716b 導電体
718a 絶縁体
718b 絶縁体
718c 絶縁体
719 発光素子
720 絶縁体
721 絶縁体
731 端子
732 FPC
733a 配線
734 シール材
735 駆動回路
736 駆動回路
737 画素
741 トランジスタ
742 容量素子
743 スイッチ素子
744 信号線
750 基板
751 トランジスタ
752 容量素子
753 液晶素子
754 走査線
755 信号線
781 導電体
782 発光層
783 導電体
784 隔壁
791 導電体
792 絶縁体
793 液晶層
794 絶縁体
795 スペーサ
796 導電体
797 基板
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2001 基板
2004 プラグ
2100 トランジスタ
2200 トランジスタ
2201 絶縁膜
2202 配線
2203 プラグ
2204 層間絶縁膜
2207 絶縁膜
2211 半導体基板
2212 絶縁膜
2213 ゲート電極
2214 ゲート絶縁膜
2215 ソース領域およびドレイン領域
2300 トランジスタ
2301 不純物領域
2302 不純物領域
2303 ゲート電極
2304 ゲート絶縁膜
2305 側壁絶縁膜
2400 フォトダイオード
2401 導電膜
2402 導電膜
2403 導電膜
2500 フォトダイオード
2501 導電膜
2502 導電膜
2503 半導体
2504 プラグ
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
5100 ペレット
5120 基板
5161 領域
Claims (6)
- 基板上に酸化物半導体と、
前記酸化物半導体と接する第1の電極及び第2の電極と、
前記酸化物半導体、前記第1の電極、前記第2の電極上の絶縁体と、
前記絶縁体上の第3の電極と、を有し、
前記酸化物半導体は、前記第1の電極と重なる第1の領域、前記第2の電極と重なる第2の領域、及び前記第3の電極と重なる第3の領域を有し、
前記第1の領域と、前記第3の領域とは重なる第4の領域を有し、
前記第2の領域と、前記第3の領域とは重なる第5の領域を有し、
前記第1の電極の上面および前記第2の電極の上面は、前記酸化物半導体の上面と同一平面、または前記同一平面よりも前記基板側に設けられていることを特徴とする半導体装置。 - 酸化物半導体と、第1の電極と、第2の電極と、第3の電極と、絶縁体と、を有し、
前記第3の電極は、前記絶縁体を介して、前記酸化物半導体上に設けられ、
前記酸化物半導体は、前記第1の電極と重なる第1の領域、前記第2の電極と重なる第2の領域、及び前記第3の電極と重なる第3の領域を有し、
前記第1の領域と、前記第3の領域とは重なる第4の領域を有し、
前記第2の領域と、前記第3の領域とは重なる第5の領域を有し、
前記第1の電極の上面および前記第2の電極の上面は、前記酸化物半導体の前記絶縁体に近い面と同一平面、または前記同一平面よりも前記酸化物半導体側に設けられていることを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第4の領域及び前記第5の領域の長さは、0nm以上5nm以下であることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記酸化物半導体は、チャネルが形成される領域を有し、
前記絶縁体は、前記チャネルが形成される領域と重なる領域において段差を有さないことを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一において、前記第1の電極はソース電極及びドレイン電極の一方として機能し、
前記第2の電極はソース電極及びドレイン電極の他方として機能することを特徴とする半導体装置。 - 請求項1乃至5のいずれか一に記載の半導体装置を有する電子機器。
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JP2021007166A (ja) | 2021-01-21 |
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US20160247928A1 (en) | 2016-08-25 |
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