JP6743692B2 - 感光性樹脂組成物、感光性シート、半導体装置および半導体装置の製造方法 - Google Patents
感光性樹脂組成物、感光性シート、半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6743692B2 JP6743692B2 JP2016511459A JP2016511459A JP6743692B2 JP 6743692 B2 JP6743692 B2 JP 6743692B2 JP 2016511459 A JP2016511459 A JP 2016511459A JP 2016511459 A JP2016511459 A JP 2016511459A JP 6743692 B2 JP6743692 B2 JP 6743692B2
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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Description
下記一般式(1)で表される化合物を含み、前記一般式(1)で表される化合物が、下記一般式(3)または(4)で表される化合物である感光性樹脂組成物、である。
本発明の感光性シートは下記の構成を有する。すなわち、
上記感光性樹脂組成物を用いて形成された感光性シート、である。
上記感光性樹脂組成物を用いて形成された硬化膜を有する半導体装置、である。
上記感光性樹脂組成物を基板上に塗布またはラミネートした後に紫外線照射工程と現像工程を経てパターンを形成し、さらに加熱して硬化膜を形成する工程を含む半導体装置の製造方法、である。
本発明の感光性樹脂組成物は、前記一般式(1)で表される化合物を(A )架橋性化合物として含有し、さらに、(B)アルカリ可溶性樹脂、(C)光酸発生剤、(D)溶剤とを含むことが好ましい。
本発明の感光性樹脂組成物は、 前記(B)アルカリ可溶性樹脂の、上記一般式(6)に示す構造単位が、ジアミン残基に由来することが好ましい。
上記一般式(4)で表される化合物を得るためには、多くの合成方法を適用できる。例えばポリアルキレングリコール構造を有するエポキシ化合物を原料として合成できる。合成に供する原料化合物としては、エピクロンEXA−4880、エピクロンEXA−4850−1000、エピクロンEXA−4822(以上、商品名、大日本インキ化学工業(株)から入手可能)、リカレジンBEO−60E(以下、商品名、新日本理化(株)から入手可能)などが好ましく、より具体的には以下の一般式で示される化合物が挙げられるが、これらに限定されない。
本発明の感光性樹脂組成物には、加熱焼成後に得られる硬化膜の耐薬品性と耐熱性を向上させる目的で、(A)架橋性化合物として、一般式(1)で表される化合物に加え、(A’)その他の架橋性化合物を併用することが好ましい。(A’)その他の架橋性化合物としては、ベンゾオキサジン構造を有する化合物、エポキシ構造を有する化合物、オキセタン構造を有する化合物、アルコキシメチル構造を有する化合物が挙げられる。
本発明の樹脂組成物に好ましく用いられるポリイミド樹脂、ポリイミド前駆体樹脂は、テトラカルボン酸や対応するテトラカルボン酸二無水物、テトラカルボン酸ジエステルジクロリドなどと、ジアミンや対応するジイソシアネート化合物、トリメチルシリル化ジアミンを反応させることにより得ることができ、テトラカルボン酸残基とジアミン残基を有する。より好ましくは、例えば、テトラカルボン酸や対応するテトラカルボン酸二無水物と、アルキレングリコール構造を有するジアミン化合物を反応させて得られる構造があげられ、反応によって得られた樹脂は主鎖に一般式(6)に示す構造単位を2つ以上有する。アルキレングリコール構造を有するジアミン化合物の例としては、ジェファーミンKH−511,ジェファーミンED−600,ジェファーミンED−900,ジェファーミンED−2003,ジェファーミンEDR−148、ジェファーミンEDR−176、エラスタミンRP−409、エラスタミンRE−900、エラスタミンRE1−1000、エラスタミンRT−1000 (以上、商品名、HUNTSMAN社から入手可能)が挙げられる。
各実施例および比較例に供するワニスを、8インチ(203.2mm)のシリコンウェハー上に塗布現像装置ACT―8(東京エレクトロン(株)製)を用いてスピンコート法で塗布し、次いで120℃のホットプレート(大日本スクリーン製造(株)製SKW−636)で5分間ベークし、厚さ10μm±1μmのプリベーク膜を作製した。次いでイナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で250℃まで昇温し、250℃で1時間加熱処理を行なったのち、温度が50℃以下まで降温してからウェハーを取り出し、その硬化膜をストレス装置FLX2908(KLA Tencor社製)にて測定した。その結果が、35MPa以上のものを不十分(D)、30MPa以上35MPa未満の場合は良好(C)、15MPa以上30MPa未満の場合はさらに良好(B)、15MPa未満のものはきわめて良好(A)とした。
各実施例および比較例に供するワニスを、8インチ(203.2mm)のシリコンウェハー上に塗布現像装置ACT―8(東京エレクトロン(株)製)を用いてスピンコート法で塗布および120℃で3分間プリベークを行なった。露光機i線ステッパーNSR−2005i9C((株)ニコン製)を用いて露光した。露光後、ACT−8の現像装置を用いて、2.38質量%の水酸化テトラメチルアンモニウム水溶液(以下、TMAH。多摩化学工業(株)製)を用いてパドル法で現像液の吐出時間10秒、パドル時間40秒の現像を3回繰り返し、その後純水でリンス後、振り切り乾燥し、露光部が完全に溶解している時の最低露光量を感度とした。感度が500mJ/cm2以上であるものを不十分(C)、300mJ/cm2以上500mJ/cm2未満のものを良好(B)、300mJ/cm2未満のものをさらに良好(A)とした。
各実施例および各比較例に供するワニスを、8インチ(203.2mm)のシリコンウェハー上に塗布現像装置ACT―8(東京エレクトロン(株)製)を用いてスピンコート法で塗布および120℃で3分間プリベークを行なった。露光機i線ステッパーNSR−2005i9C((株)ニコン製)にパターンの切られたレチクルをセットし、800mJ/cm2の露光量で露光した。露光後、ACT−8の現像装置を用いて、2.38質量%のTMAHを用いてパドル法で現像液の吐出時間10秒、パドル時間40秒の現像を3回繰り返し、その後純水でリンス後、振り切り乾燥し、ポジ型のパターンを得たのち、パターンを顕微鏡で観察し、ラインアンドスペースが解像している最小寸法を解像度とした。10μm以上の解像度を不十分(C)、5μm以上10μm未満のものを良好(B)、5μm未満のものをさらに良好(A)とした。
各実施例および比較例に供するワニスの粘度を測定したのち密閉容器に入れ、その容器を23℃の恒温槽で2週間放置した。その後もう一度粘度を測定し、その変化率を計算した。その計算結果で得られた変化率が、20%以上のものを不安定(D)、10%以上20%未満のものを普通(C)、5%以上10%未満のものを良好(B)、5%未満のものをさらに良好(A)とした。
各実施例および比較例に供するワニスを、8インチ(203.2mm)のシリコンウェハー上に塗布現像装置ACT―8(東京エレクトロン(株)製)を用いてスピンコート法で塗布し、次いで120℃のホットプレート(大日本スクリーン製造(株)製SKW−636)で5分間ベークし、厚さ10μm±1μmのプリベーク膜を作製した。次いでイナートオーブンCLH−21CD−S(光洋サーモシステム(株)製)を用いて、酸素濃度20ppm以下で3.5℃/分で250℃まで昇温し、250℃で1時間加熱処理を行なったのち、温度が50℃以下まで降温してからシリコンウェハーを取り出し、膜厚を測定後、シリコンウェハーをN−メチルピロリドンに15分浸漬した。その後、シリコンウェハーを純水で十分に洗浄した後、再度膜厚を測定し、膜厚の変化率の絶対値が20%を超えるものを不十分(C)、20%以内であって5%を超えるものを良好(B)、5%以内であるものをさらに良好(A)とした。
特定のポリアルキレングリコール構造を有するジアミン化合物のうち、エチレングリコールとプロピレングリコール構造単位をそれぞれ複数有するジアミン化合物である、下記式で表される化合物6gとパラホルムアルデヒド12gを水酸化ナトリウム溶液中で定法により反応を行い、架橋性化合物(a−1)を得た。13C−NMRで測定した結果、メチロール基への置換率は100%であった。その後、メタノール100g中に化合物(a−1)を溶解し、還流下で12時間の反応を行い、メトキシメチル基を有する架橋性化合物(A−1)を得た。メチル基への置換率は99%であった。
特定のポリアルキレングリコール構造を有するジアミン化合物のうち、テトラメチレングリコールとプロピレングリコール構造単位を複数有するジアミン化合物である、下記式で表される化合物10gとパラホルムアルデヒド12gを前記合成例1と同様に反応を行い、架橋性化合物(a−2)を得た。13C−NMRで測定した結果、メチロール基への置換率は100%であった。その後ブタノール160g中に化合物(a−2)を溶解し、還流下で15時間の反応を行い、ブトキシメチル基を有する架橋性化合物(A−2)を得た。ブチル基への置換率は68%であった。
ポリアルキレングリコール構造を有するエポキシ化合物のうち、エチレングリコール構造単位を6つ有するエポキシ化合物である、下記式で表される化合物5.4gとパラクレゾール1.8gを定法により付加反応させ、さらにパラホルムアルデヒド21gを前記合成例1と同様に反応を行い、架橋性化合物(a−3)を得た。13C−NMRで測定した結果、メチロール基への置換率は100%であった。その後、メタノール100g中に化合物(a−3)を溶解し、還流下で12時間の反応を行い、メトキシメチル基を有する架橋性化合物(A−3)を得た。メチル基への置換率は55%であった。
乾燥窒素気流下、3,3’,4,4’−ジフェニルエーテルテトラカルボン酸二無水物(以下、ODPA)62.0g(0.2モル)をN−メチルピロリドン(以下、NMP)1000gに溶解させた。ここに 2,2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(以下、BAHF)47.5g(0.13モル)、テトラメチレングリコールとプロピレングリコール構造単位を複数有するジアミン化合物である、下記式で表される化合物60.0g(0.06モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン2.5g(0.01モル)をNMP250gとともに加えて、60℃で1時間反応させ、次いで140℃で6時間反応させた。反応終了後、溶液を室温まで冷却した後、溶液を水10Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、80℃の真空乾燥機で40時間乾燥し、目的の樹脂であるポリイミドの共重合体(B−1)を得た。
乾燥窒素気流下、ODPA62.0g(0.2モル)をNMP1000gに溶解させた。ここにBAHF73.1g(0.2モル)をNMP250gとともに加えて、60℃で1時間反応させ、次いで160℃で6時間反応させた。反応終了後、溶液を室温まで冷却した後、溶液を水10Lに投入して白色沈殿を得た。この沈殿を濾過で集めて、水で3回洗浄した後、80℃の真空乾燥機で40時間乾燥し、ポリイミド前駆体樹脂(B−2)を得た。
m−クレゾール、p−クレゾールをモル比で4:6となるように混合し、次いで酸触媒としてシュウ酸を用い、縮合剤としてホルムアルデヒドおよびサリチルアルデヒドを用いて、常法により縮合反応を行ってノボラック樹脂を合成した。
乾燥窒素気流下、ポリヒドロキシ化合物であるTrisP−PA(商品名、本州化学工業(株)製)、21.22g(0.05モル)と5−ナフトキノンジアジドスルホン酸クロリド(東洋合成(株)製、NAC−5)26.8g(0.1モル)を1,4−ジオキサン450gに溶解させ、室温にした。ここに、1,4−ジオキサン50gと混合したトリエチルアミン12.65gを、系内が35℃以上にならないように滴下した。滴下後40℃で2時間撹拌した。トリエチルアミン塩を濾過し、濾液を水に投入した。その後、析出した沈殿を濾過で集め、さらに1%塩酸水1Lで洗浄した。その後、さらに水2Lで2回洗浄した。この沈殿を真空乾燥機で乾燥し、下記式で表される光酸発生剤化合物(C−1)を得た。
表1に示す質量比でワニスを調製し、これらの特性を上記評価方法により測定した。得られた結果を表2に示す。
Claims (11)
- 下記一般式(1)で表される化合物を含み、前記一般式(1)で表される化合物が、下記一般式(3)または(4)で表される化合物である感光性樹脂組成物。
- 前記一般式(1)で表される化合物を(A)架橋性化合物として含有し、さらに、(B)アルカリ可溶性樹脂、(C)光酸発生剤、(D)溶剤とを含む請求項1に記載の感光性樹脂組成物。
- 前記(B)アルカリ可溶性樹脂が、ポリイミド、ポリベンゾオキサゾール、ポリアミドイミド、それらいずれかの前駆体、またはそれらのうちいずれか1種以上を含む共重合体である請求項2に記載の感光性樹脂組成物。
- 前記(B)アルカリ可溶性樹脂の、上記一般式(6)に示す構造単位が、ジアミン残基に由来する、請求項4に記載の感光性樹脂組成物。
- さらに、(A’)その他の架橋性化合物として、ベンゾオキサジン構造を有する化合物、エポキシ構造を有する化合物、オキセタン構造を有する化合物、およびアルコキシメチル構造を有する化合物から選ばれる1種類以上含む請求項1〜5のいずれかに記載の感光性樹脂組成物。
- 前記架橋性化合物(A)と(A’)の質量比が、(A):(A’)=9:1〜1:9である請求項6に記載の感光性樹脂組成物。
- 請求項1〜7のいずれかに記載の感光性樹脂組成物を用いて形成された感光性シート。
- 請求項1〜7のいずれかに記載の感光性樹脂組成物を用いて形成された硬化膜を有する半導体装置。
- 請求項1〜7のいずれかに記載の感光性樹脂組成物を基板上に塗布またはラミネートした後に紫外線照射工程と現像工程を経てパターンを形成し、さらに加熱して硬化膜を形成する工程を含む半導体装置の製造方法。
- 請求項1〜7のいずれかに記載の感光性樹脂組成物の硬化膜が形成された基板を10μm〜100μmの厚さに研削する工程を含む半導体装置の製造方法。
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