JP6740129B2 - 技術スケーリングのためのｍｒａｍ統合技法 - Google Patents

技術スケーリングのためのｍｒａｍ統合技法 Download PDF

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JP6740129B2
JP6740129B2 JP2016539325A JP2016539325A JP6740129B2 JP 6740129 B2 JP6740129 B2 JP 6740129B2 JP 2016539325 A JP2016539325 A JP 2016539325A JP 2016539325 A JP2016539325 A JP 2016539325A JP 6740129 B2 JP6740129 B2 JP 6740129B2
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mtj
forming
cap
mram
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JP2016541123A (ja
JP2016541123A5 (enExample
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シア・リ
ユ・ル
スン・ヒュク・カン
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
JP2016539325A 2013-12-17 2014-12-12 技術スケーリングのためのｍｒａｍ統合技法 Expired - Fee Related JP6740129B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/109,200 2013-12-17
US14/109,200 US9406875B2 (en) 2013-12-17 2013-12-17 MRAM integration techniques for technology scaling
PCT/US2014/070035 WO2015094974A1 (en) 2013-12-17 2014-12-12 Mram integration techniques for technology scaling

Publications (3)

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JP2016541123A JP2016541123A (ja) 2016-12-28
JP2016541123A5 JP2016541123A5 (enExample) 2018-01-11
JP6740129B2 true JP6740129B2 (ja) 2020-08-12

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US (2) US9406875B2 (enExample)
EP (1) EP3084766B1 (enExample)
JP (1) JP6740129B2 (enExample)
CN (1) CN105830161B (enExample)
WO (1) WO2015094974A1 (enExample)

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US11024344B2 (en) * 2018-10-09 2021-06-01 International Business Machines Corporation Landing pad in interconnect and memory stacks: structure and formation of the same
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Publication number Publication date
US9406875B2 (en) 2016-08-02
US20160329488A1 (en) 2016-11-10
CN105830161B (zh) 2019-04-23
JP2016541123A (ja) 2016-12-28
US9595662B2 (en) 2017-03-14
WO2015094974A1 (en) 2015-06-25
CN105830161A (zh) 2016-08-03
EP3084766B1 (en) 2018-08-29
EP3084766A1 (en) 2016-10-26
US20150171314A1 (en) 2015-06-18

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