CN105830161B - 用于技术缩放的mram集成技术 - Google Patents

用于技术缩放的mram集成技术 Download PDF

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Publication number
CN105830161B
CN105830161B CN201480068613.7A CN201480068613A CN105830161B CN 105830161 B CN105830161 B CN 105830161B CN 201480068613 A CN201480068613 A CN 201480068613A CN 105830161 B CN105830161 B CN 105830161B
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dielectric layer
magnetic tunnel
tunnel junction
layer
bottom electrode
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CN201480068613.7A
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English (en)
Chinese (zh)
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CN105830161A (zh
Inventor
X·李
Y·陆
S·H·康
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CN201480068613.7A 2013-12-17 2014-12-12 用于技术缩放的mram集成技术 Active CN105830161B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/109,200 US9406875B2 (en) 2013-12-17 2013-12-17 MRAM integration techniques for technology scaling
US14/109,200 2013-12-17
PCT/US2014/070035 WO2015094974A1 (en) 2013-12-17 2014-12-12 Mram integration techniques for technology scaling

Publications (2)

Publication Number Publication Date
CN105830161A CN105830161A (zh) 2016-08-03
CN105830161B true CN105830161B (zh) 2019-04-23

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US (2) US9406875B2 (enExample)
EP (1) EP3084766B1 (enExample)
JP (1) JP6740129B2 (enExample)
CN (1) CN105830161B (enExample)
WO (1) WO2015094974A1 (enExample)

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KR102613512B1 (ko) * 2017-01-19 2023-12-13 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
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Also Published As

Publication number Publication date
US9595662B2 (en) 2017-03-14
JP2016541123A (ja) 2016-12-28
US20150171314A1 (en) 2015-06-18
CN105830161A (zh) 2016-08-03
US9406875B2 (en) 2016-08-02
EP3084766A1 (en) 2016-10-26
US20160329488A1 (en) 2016-11-10
WO2015094974A1 (en) 2015-06-25
JP6740129B2 (ja) 2020-08-12
EP3084766B1 (en) 2018-08-29

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