JP6693292B2 - 半導体装置の製造方法及び半導体製造装置 - Google Patents
半導体装置の製造方法及び半導体製造装置 Download PDFInfo
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- JP6693292B2 JP6693292B2 JP2016121874A JP2016121874A JP6693292B2 JP 6693292 B2 JP6693292 B2 JP 6693292B2 JP 2016121874 A JP2016121874 A JP 2016121874A JP 2016121874 A JP2016121874 A JP 2016121874A JP 6693292 B2 JP6693292 B2 JP 6693292B2
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Description
次に、前記シリコン膜をエッチングするためのハロゲンガスと、当該ハロゲンガスによるエッチング後のシリコン膜の表面の荒れを抑えるための荒れ抑制ガスと、を含む処理ガスを前記被処理体に供給する工程と、
当該処理ガスに熱エネルギーを与えて活性化し、前記凹部の側壁に形成された前記シリコン膜をプラズマが形成されない雰囲気でエッチングして当該凹部の開口幅を広げるエッチング工程と、
然る後、前記成膜ガスを前記被処理体に供給し、前記凹部内に残留した前記シリコン膜上にシリコンを堆積させて当該凹部内にシリコンを充填する工程と、
を備え、
前記シリコン膜を形成する工程は、縦断面視、下部側に比べて上部側が膨らんだ側壁を有する前記凹部内にシリコン膜を形成する工程であり、
前記エッチング工程は、前記凹部の側壁に形成された前記シリコン膜について、下部側の膜厚が上部側の膜厚に比べて大きくなるようにエッチングする工程であることを特徴とする。
前記被処理体を加熱する加熱部と、
前記真空容器内にシリコンを含有する成膜ガスを供給する成膜ガス供給部と、
前記真空容器内にシリコン膜をエッチングするためのハロゲンガスを供給するエッチングガス供給部と、
当該ハロゲンガスによるエッチング後のシリコン膜の表面の荒れを抑えるための荒れ抑制ガスを供給する荒れ抑制ガス供給部と、
前記成膜ガスを被処理体に供給して、当該被処理体の表面に形成された凹部内にシリコン膜を形成するステップと、次に、前記ハロゲンガスと前記荒れ抑制ガスとを含む処理ガスを前記被処理体に供給するステップと、当該処理ガスに熱エネルギーを与えて活性化し、前記凹部の側壁に形成された前記シリコン膜をプラズマが形成されない雰囲気でエッチングして当該凹部の開口幅を広げるエッチングステップと、然る後、前記成膜ガスを前記被処理体に供給し、前記凹部内に残留した前記シリコン膜上にシリコンを堆積させて当該凹部内にシリコンを充填するステップと、を実施するように制御信号を出力する制御部と、
を備え、
前記シリコン膜を形成するステップは、縦断面視、下部側に比べて上部側が膨らんだ側壁を有する前記凹部内にシリコン膜を形成するステップであり、
前記エッチングステップは、前記凹部の側壁に形成された前記シリコン膜について、下部側の膜厚が上部側の膜厚に比べて大きくなるようにエッチングするステップであることを特徴とする。
本発明に関連して行われた評価試験について説明する。上記の縦型熱処理装置1を用いて、ウエハWの表面に形成されたSi膜44について、上記の実施例の処理中のエッチング処理と同様のエッチング処理を行った。処理条件として、ウエハWの温度は400℃、反応管11内の圧力は26.6Pa、Cl2ガスの流量は1000sccmに夫々設定した。そして、HBrガスの流量については処理を行う毎に0〜1000sccmの範囲で変更した。エッチング処理された各ウエハWについては、Si膜44のエッチングレート((単位時間あたりのエッチング量))、ウエハWに残留したSi膜44の表面のHaze(ヘイズ)、WinWについて測定した。
WinW(±%)=±(エッチングレートの最大値−エッチングレートの最小値)/(エッチングレートの平均値)×100/2・・・式1
1 縦型熱処理装置
11 反応管
19 ヒーター
21、31 ガス導入管
23A〜23E、32 ガス供給源
24A〜24E、33 ガス供給機構
27 バルブ
30 制御部
Claims (7)
- シリコンを含有する成膜ガスを被処理体に供給して、当該被処理体の表面に形成された凹部内にシリコン膜を形成する工程と、
次に、前記シリコン膜をエッチングするためのハロゲンガスと、当該ハロゲンガスによるエッチング後のシリコン膜の表面の荒れを抑えるための荒れ抑制ガスと、を含む処理ガスを前記被処理体に供給する工程と、
当該処理ガスに熱エネルギーを与えて活性化し、前記凹部の側壁に形成された前記シリコン膜をプラズマが形成されない雰囲気でエッチングして当該凹部の開口幅を広げるエッチング工程と、
然る後、前記成膜ガスを前記被処理体に供給し、前記凹部内に残留した前記シリコン膜上にシリコンを堆積させて当該凹部内にシリコンを充填する工程と、
を備え、
前記シリコン膜を形成する工程は、縦断面視、下部側に比べて上部側が膨らんだ側壁を有する前記凹部内にシリコン膜を形成する工程であり、
前記エッチング工程は、前記凹部の側壁に形成された前記シリコン膜について、下部側の膜厚が上部側の膜厚に比べて大きくなるようにエッチングする工程であることを特徴とする半導体装置の製造方法。 - 前記ハロゲンガスは塩素ガスであることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記エッチング工程は、前記被処理体を250℃〜450℃に加熱する工程を含むことを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記処理ガスは、前記荒れ抑制ガスの流量/前記ハロゲンガスの流量が1/4以上となるように当該荒れ抑制ガス及びハロゲンガスを含むことを特徴とする請求項1ないし3のいずれか1つに記載の半導体装置の製造方法。
- 前記荒れ抑制ガスは臭化水素ガスであることを特徴とする請求項1ないし4のいずれか1つに記載の半導体装置の製造方法。
- 前記エッチング工程によりエッチングされた前記シリコン膜の表面のヘイズの値/前記処理ガスを構成するハロゲンガス及び荒れ抑制ガスのうち前記ハロゲンガスのみを前記被処理体に供給して前記エッチング工程が行われたときの前記シリコン膜の表面のヘイズの値は、0.8以下であることを特徴とする請求項1ないし5のいずれか1つに記載の半導体装置の製造方法。
- 被処理体を収納する真空容器と、
前記被処理体を加熱する加熱部と、
前記真空容器内にシリコンを含有する成膜ガスを供給する成膜ガス供給部と、
前記真空容器内にシリコン膜をエッチングするためのハロゲンガスを供給するエッチングガス供給部と、
当該ハロゲンガスによるエッチング後のシリコン膜の表面の荒れを抑えるための荒れ抑制ガスを供給する荒れ抑制ガス供給部と、
前記成膜ガスを被処理体に供給して、当該被処理体の表面に形成された凹部内にシリコン膜を形成するステップと、次に、前記ハロゲンガスと前記荒れ抑制ガスとを含む処理ガスを前記被処理体に供給するステップと、当該処理ガスに熱エネルギーを与えて活性化し、前記凹部の側壁に形成された前記シリコン膜をプラズマが形成されない雰囲気でエッチングして当該凹部の開口幅を広げるエッチングステップと、然る後、前記成膜ガスを前記被処理体に供給し、前記凹部内に残留した前記シリコン膜上にシリコンを堆積させて当該凹部内にシリコンを充填するステップと、を実施するように制御信号を出力する制御部と、
を備え、
前記シリコン膜を形成するステップは、縦断面視、下部側に比べて上部側が膨らんだ側壁を有する前記凹部内にシリコン膜を形成するステップであり、
前記エッチングステップは、前記凹部の側壁に形成された前記シリコン膜について、下部側の膜厚が上部側の膜厚に比べて大きくなるようにエッチングするステップであることを特徴とする半導体製造装置。
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