TW201802295A - 半導體裝置之製造方法及半導體製造裝置 - Google Patents

半導體裝置之製造方法及半導體製造裝置 Download PDF

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TW201802295A
TW201802295A TW106119394A TW106119394A TW201802295A TW 201802295 A TW201802295 A TW 201802295A TW 106119394 A TW106119394 A TW 106119394A TW 106119394 A TW106119394 A TW 106119394A TW 201802295 A TW201802295 A TW 201802295A
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gas
film
silicon
etching
silicon film
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TW106119394A
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TWI710669B (zh
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岡田充弘
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東京威力科創股份有限公司
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  • Drying Of Semiconductors (AREA)

Abstract

本發明之課題為：提供一種技術，在將含矽之成膜氣體供給到表面形成有凹部的被處理體，以矽將凹部內充填而形成矽層時，可防止在該矽層含有孔隙或形成縫隙。 解決課題之手段：將成膜氣體供給到被處理體(晶圓W)，而在該被處理體的表面之凹部42內形成矽膜44。接著，將含有用以蝕刻矽膜44之鹵素氣體、及用以抑制由該鹵素氣體蝕刻後的矽膜44之表面粗糙的粗糙抑制氣體兩者的處理氣體加以供給到該被處理體，並且賦予熱能而使其活性化，以對形成於該凹部42之側壁的該矽膜44進行蝕刻，而使該凹部42之開口寬度加大。然後，將成膜氣體供給到該被處理體，使得矽沉積在殘留於該凹部42內之該矽膜上，而充填該矽。

Description

半導體裝置之製造方法及半導體製造裝置
本發明關於將含矽之成膜氣體供給到被處理體，而將矽充填入形成於該被處理體之表面的凹部內之技術領域。
為了形成例如半導體裝置的邏輯元件，有時藉由將含矽之成膜氣體供給到作為基板的半導體晶圓(以下稱晶圓)之表面，以將矽充填入在該晶圓之表面朝下方形成的凹部內，藉此形成矽層。
就上述凹部而言，有其內側側壁之頂部膨起，而使凹部內的上部側之開口寬度相較於下部側之開口寬度變小的情形。當長時間地對此種形狀之凹部供給上述成膜氣體時，由於凹部的上部在結束將矽充填入凹部內之前便封閉，致使形成於凹部內的矽層有包含孔隙之虞。因此，有時以稱為DED(Deposition Etch Deposition，沉積/蝕刻/沉積)之方式，對凹部進行矽的充填。此方式依序進行：供給成膜氣體而進行之第一次成膜處理、供給蝕刻氣體而進行之蝕刻處理、供給成膜氣體而進行之第二次成膜處理。又，專利文獻1記載：將氯氣及溴化氫氣體之混合氣體亦即蝕刻氣體加以電漿化，而對晶圓表面之矽進行蝕刻的處理。 ［先前技術文獻］ ［專利文獻］
［專利文獻1］日本專利第3093445號(段落0022)
［發明所欲解決之課題］ 進一步詳細說明上述DED方式，第一次成膜處理係在上述凹部之上部產生封閉之前結束，並在凹部內形成矽膜。接下來的蝕刻處理係加大凹部內的上部側之開口寬度，並使得矽膜殘留在凹部內。在如此進行蝕刻之後的第二次成膜處理，則抑制上述孔隙之形成，同時將矽充填到凹部內。
為了進行上述蝕刻處理，有人使用對矽之反應性較大的蝕刻氣體，例如氯氣作為蝕刻氣體，俾其在到達凹部的下方側之前，便在凹部的上部側和矽膜進行反應。但是，由於以此氯氣進行蝕刻，矽膜表面的粗糙變得較明顯。對此，將在實施發明之態樣作詳細的敘述，故在此簡單說明之。當上述粗糙較明顯的矽膜表面，在第二次成膜處理時沉積矽之時，有形成在凹部內的矽層含有微小孔隙，或者形成縫隙之虞。另外，對此矽層進行各向異性蝕刻時，由於形成有孔隙或縫隙之處其矽密度相較於他處較低，故導致蝕刻大幅度地進行。
本發明係在此背景之下完成，其目的為提供一種技術，可在將含矽的成膜氣體供給到表面形成有凹部的被處理體，並且以矽充填凹部內而形成矽層時，防止該矽層含有孔隙或者形成縫隙。 ［解決課題之手段］
本發明的半導體裝置之製造方法，其特徵為包含下述步驟： 將含矽之成膜氣體供給到被處理體，而在形成於該被處理體之表面的凹部內形成矽膜； 接著，將含有用以蝕刻該矽膜之鹵素氣體、及用以抑制由該鹵素氣體蝕刻後的矽膜之表面粗糙的粗糙抑制氣體兩者的處理氣體供給到該被處理體； 賦予熱能到該處理氣體，而使其活性化，以對形成於該凹部之側壁的該矽膜進行蝕刻，而加大該凹部之開口寬度的蝕刻步驟；以及 然後，將該成膜氣體供給到該被處理體，使得矽沉積在殘留於該凹部內之該矽膜上，而將矽充填到該凹部內。
本發明之半導體製造裝置，其特徵為具備： 真空容器，收納被處理體； 加熱部，將該被處理體加熱； 成膜氣體供給部，將含矽之成膜氣體供給到該處理容器內； 蝕刻氣體供給部，將用以蝕刻矽膜之鹵素氣體供給到該處理容器內； 粗糙抑制氣體供給部，供給用以抑制由該鹵素氣體蝕刻後的矽膜之表面粗糙的粗糙抑制氣體；以及 控制部，輸出控制信號，俾實施下述步驟： 將該成膜氣體供給到被處理體，在形成於該被處理體的表面之凹部內形成矽膜；接著，將含有該鹵素氣體及該粗糙抑制氣體的處理氣體供給到該被處理體；賦予熱能到該處理氣體而使其活性化，對形成於該凹部之側壁的該矽膜進行蝕刻，而加大該凹部之開口寬度的蝕刻步驟；然後，將該成膜氣體供給到該被處理體，使矽沉積在殘留於該凹部內之該矽膜上，而將矽充填到該凹部內。 ［發明之效果］
依本發明，將熱能供給到含有作為蝕刻氣體之鹵素氣體、及用以使得蝕刻後的膜之表面平坦化之粗糙抑制氣體兩者的處理氣體，而對形成在被處理體之凹部內的矽膜進行蝕刻之後，供給成膜氣體以使矽沉積在所殘留的矽膜上，而將矽充填到凹部內。藉此，可使得在該凹部內成長的矽膜之表面的平坦性提高。其結果，可抑制由該矽膜所形成的矽層含有孔隙，或者在該矽層形成縫隙。
首先，一面參照圖1之縱剖面圖，一面說明作為依本發明之半導體製造裝置的一實施形態之立式熱處理裝置1。此立式熱處理裝置1為了在作為基板之晶圓W形成半導體裝置的邏輯元件，進行在前述先前技術及發明所欲解決之課題此二項所說明的DED。也就是說，對晶圓W進行成膜處理及蝕刻處理。此成膜處理是以熱CVD(Chemical Vapor Deposition，化學氣相沉積)進行的處理，蝕刻處理則是對蝕刻氣體供給熱能而進行的反應性氣體蝕刻。
立式熱處理裝置1具備長邊方向在垂直方向上的大致圓筒狀之真空容器亦即反應管11。反應管11形成由內管12、及罩住該內管12且和內管12具有一定間隔的有蓋式外管13所構成的雙重管構造。又，內管12及外管13以耐熱材料，例如石英形成。
在外管13之下方，配置有由形成筒狀之不鏽鋼(SUS)構成的歧管14。歧管14和外管13之下端氣密性地連接。又，內管12由自歧管14之內壁突出，且和歧管14一體形成的支持環15所支持。
在歧管14之下方配置有蓋體16，蓋體16藉由晶圓舟升降機10，可在上升位置與下降位置之間任意升降。圖1顯示位在上升位置的蓋體16。在此上升位置，蓋體16閉鎖住反應管11其位於歧管14之下方側的開口部17，並且使該反應管11內成為氣密性。又，在蓋體16載置著由例如石英構成之晶圓舟3。晶圓舟3可在垂直方向上隔著預定間隔，而水平固持作為被處理體的複數片晶圓W。在反應管11之周圍，以包圍反應管11之方式設有隔熱體18。隔熱體18在其內壁面設有由作為加熱部之例如電阻發熱體所構成的加熱器19，可對反應管11內進行加熱。
歧管14在其位於該支持環15之下方側，插入穿通有處理氣體導入管21及吹淨氣體導入管31。各氣體導入管21、31之下游端配置成可對內管12內之晶圓W供給氣體。例如，處理氣體導入管21之上游側分歧，而形成分歧通路22A～22E。分歧通路22A～22E各自的上游端分別連接於二異丙基胺基矽烷(diisopropylaminosilane，DIPAS)氣體之供給源23A、二矽烷(Si2 H6 )氣體之供給源23B、單胺基矽烷(SiH4 )氣體之供給源23C、氯氣(Cl2 )之供給源23D、及溴化氫(HBr)氣體之供給源23E。另外，在分歧通路22A～22E分別插設有氣體供給機構24A～24E。氣體供給機構24A～24E分別具備閥或質量流量控制器，可分別對從氣體供給源23A～23E往處理氣體導入管21供給的處理氣體之流量進行控制。
SiH4 氣體為用以在晶圓W形成矽(Si)膜之成膜氣體，氣體供給源23C及氣體供給機構24C構成成膜氣體供給部。Cl2 氣為用以蝕刻Si膜之蝕刻氣體，氣體供給源23D及氣體供給機構24D構成蝕刻氣體供給部。HBr氣體為用以使得被蝕刻後之Si膜的表面之平坦性提高的粗糙抑制氣體，氣體供給源23E及氣體供給機構24E構成粗糙抑制氣體供給部。
又，吹淨氣體導入管31之上游側連接於作為吹淨氣體的氮氣(N2 )之供給源32。在吹淨氣體導入管31插設有氣體供給機構33。氣體供給機構33形成和氣體供給機構24A～24E同樣的構成，可對吹淨氣體流往導入管31之下游側的流量進行控制。
另外，歧管14在其位於支持環15之上方的側面形成有排氣口25，在內管12所產生的排氣等通過形成於內管12與外管13之間的空間，而排到該排氣口25。在排氣口25氣密性地連接有排氣管26。排氣管26自其上游側開始，依序插設有閥27及真空泵28。藉由對閥27之開度作調整，以將反應管11內之壓力控制在所希望之壓力。
此立式熱處理裝置1設有由電腦構成之控制部30，控制部30具有程式。 為了對晶圓W進行後述一連串處理動作，此程式包含有步驟群，俾能輸出控制信號到立式熱處理裝置1之各部而控制該各部之動作。具體而言，輸出控制信號，俾控制由晶圓舟升降機10進行的蓋體16之升降、加熱器19之輸出(亦即晶圓W之溫度)、閥27之開度、以及各氣體由氣體供給機構24A～24E、33所形成之對反應管11內的供給流量等。此程式於儲存在例如硬式磁碟、軟性磁碟、光碟、磁光碟(MO)、記憶卡等之記憶媒體的狀態下，儲存在控制部30。
接著，一面參照圖2之縱剖面圖，一面針對以該立式熱處理裝置1處理的圓W之表面部進行說明。晶圓W之表面部具有矽(Si)層41。在該Si層41形成有複數之凹部42。構成各凹部42的側壁之頂部在橫向上膨起。因此，相較於凹部42的下部側(底部側)之開口寬度L1，上部側之開口寬度L2較小。又，Si層41之表層氧化，而構成氧化矽膜43。另外，在圖中，將凹部42內之高度表示為H1，凹部42之寬高比(高度H1／上部側之開口寬度L2)在例如2以上。
接下來，一面參照顯示晶圓W的縱剖面變化之樣子的圖3～圖6，一面對以立式熱處理裝置1實施的處理作說明。首先，藉由未圖示之搬運機構，將在圖2所說明的晶圓W搬運到晶圓舟3而固持。其後，將晶圓舟3配置在位於下降位置的蓋體16上。然後，令蓋體16朝上升位置上升，而將晶圓舟3搬入到反應管11內。並且，藉由蓋體16，閉鎖住反應管11之開口部17，而使該反應管11內成為氣密性。接著，對反應管11內供給吹淨氣體，令反應管11內排氣，而成為預定壓力之真空環境氣氛。並且，藉由加熱器19，將晶圓W加熱到預定之溫度。
其後，停止供給吹淨氣體，將DIPAS氣體供給到反應管11內。此DIPAS氣體沉積在晶圓W的氧化矽膜43之表面，並以被覆氧化矽膜43之方式，形成第一種晶層。然後，停止供給DIPAS氣體，並將吹淨氣體供給到反應管11內，而自反應管11內吹淨DIPAS氣體之後，將Si2 H6 氣體供給到反應管11內。此Si2 H6 氣體沉積在第一種晶層上，而以被覆該第一種晶層之方式，形成第二種晶層。之後，停止供給Si2 H6 氣體，並將吹淨氣體供給到反應管11內，而自反應管11內吹淨Si2 H6 氣體。
其後，停止供給吹淨氣體，將SiH4 氣體供給到反應管11內。SiH4 氣體沉積在第二種晶層上，使Si膜44以被覆第二種晶層之方式，形成於晶圓W之表面整體。然後，持續SiH4 氣體之沉積，使Si膜44成長。亦即，使Si膜44之膜厚加大。之後，例如圖3所示，在凹部42內的上部側被此Si膜44封閉之前，停止供給SiH4 氣體。又，就第一種晶層及第二種晶層而言，由於其厚度微薄，故包含此圖3在內，於各圖式省略之。
停止供給上述SiH4 氣體之後，將吹淨氣體供給到反應管11內，而自反應管11內吹淨SiH4 氣體。一面進行此吹淨，一面使例如晶圓W之溫度成為250℃～450℃，例如400℃，並且使反應管11內之壓力成為例如2Pa(0.15Torr)～5.33×103 Pa(4Torr)。然後，將Cl2 氣及HBr氣體供給到處理氣體導入管21，並在該處理氣體導入管21內加以混合，而供給到反應管11內之晶圓W(圖3)。為了確實地一併得到後述由Cl2 氣產生的蝕刻效果、以及由HBr氣體產生的Si膜44之粗糙抑制效果，以例如HBr氣體之流量／Cl2 氣之流量在1／4以上的比例供給。 更具體而言，以例如Cl2 氣1000sccm，且HBr氣體250sccm～1000sccm的流量，分別供給到反應管11內(圖4)。
Cl2 氣為Si膜44之蝕刻氣體，藉由在反應管11內將其加熱而供給熱能，以產生Cl自由基等活性種。此活性種由於對Si之反應性較高，因此在到達晶圓W之凹部42內的下部之前，便和凹部42之外側及凹部42內之上部側的Si反應，而產生SiCl4 (四氯化矽)，對Si膜44進行蝕刻。因此，以相較於凹部42內之下部側的Si膜44之膜厚減少量，凹部42內之上部側的Si膜44之膜厚減少量變大的方式進行蝕刻，而使凹部42內之上部側的開口寬度加大。又，自1莫爾之Cl2 產生2莫爾之Cl自由基。也就是說，由於產生比較多的活性種，故可用較快的速度進行此開口寬度之加大。
另一方面，HBr氣體係用以使得由Cl2 氣蝕刻之後的Si膜44之表面平坦化的平坦化用處理氣體。如在發明所欲解決之課題所述，HBr氣體及Cl2 氣之中，將Cl2 氣供給到晶圓W以進行蝕刻時，蝕刻結束後的Si膜44之表面的粗糙比較明顯。對此，如在後述評價測試所說明，藉由將HBr氣體及Cl2 氣供給到晶圓W以進行蝕刻，可抑制Si膜44的表面粗糙。如此可抑制Si膜44的表面粗糙，其原因為：被加熱後之HBr氣體本身作用於Si膜44，或者HBr氣體被加熱而產生之H自由基及Br自由基當中的H自由基、與從上述Cl2 氣所產生的Cl自由基互相反應而產生的HCl(鹽酸)作用於Si膜44。
然後，停止供給Cl2 氣及HBr氣體到反應管11內，而結束蝕刻處理(圖5)。如上述，在蝕刻處理中，由於Si膜44之蝕刻在凹部42內之下部側受到抑制，故此蝕刻處理結束時，如圖5所示，在凹部42內殘留有Si膜44。而且，如上述，如此所殘留的Si膜44之表面的平坦性比較高。
又，一面供給吹淨氣體，而自反應管11去除混合氣體，一面使晶圓W之溫度達到預定之溫度，並且使反應管11內達到預定之真空壓力。然後，停止供給吹淨氣體，並將SiH4 氣體供給到反應管11內，而使SiH4 氣體沉積在Si膜44上，令Si膜44成長。由於氣體如上述般對平坦性較高的Si膜44之表面進行沉積，因此圖6所示，成長當中的Si膜44之表面的平坦性也比較高。進而，Si膜44持續成長，並且在凹部42之內，從該凹部之側面所成長的Si膜44之表面彼此接合，而形成Si層45(圖7)。由於彼此接合的Si膜44之表面的平坦性較高，因此可抑制該接合部含有孔隙，或者形成縫隙。
其後，停止供給SiH4 氣體到反應管11內，而結束成膜處理。然後，供給吹淨氣體，而自反應管11去除SiH4 氣體。另一方面，晶圓W降溫。接著，使蓋體16下降，而從反應管11搬出晶圓舟3之後，藉由未圖示的搬運機構，從晶圓舟3取出晶圓W。在為了製造半導體裝置之邏輯元件的後續製程中，使得形成在例如凹部42內之Si層45朝下方，並進行各向異性蝕刻，而加以去除。此Si層45之蝕刻，以例如構成凹部42之底部的Si層41不被蝕刻的方式進行。另外，在進行此Si層45之蝕刻時，由於Si層45未形成有孔隙及縫隙，故該Si層45之蝕刻於各部分以較高的均一性進行，藉此可防止Si層41被蝕刻。
為了明確地顯示在上述圖3～圖7所說明的處理(以下有時稱為實施例之處理)之效果，使用顯示晶圓W的縱剖面變化之樣子的圖8～圖10，說明比較例之處理。此比較例之處理在進行Si膜44之蝕刻時，不供給Cl2 氣及HBr氣體之混合氣體到晶圓W，而僅供給Cl2 氣到晶圓W。除此之外，進行和實施例之處理同樣的處理。首先，在形成上述第一種晶層及第二種晶層之後，形成Si膜44。然後，將Cl2 氣供給到晶圓W，而蝕刻Si膜44。圖8顯示此蝕刻結束之時的晶圓W。如前所述，殘留之Si膜44的表面粗糙比較明顯。又，在此圖5和上述圖8中，在箭頭前方的虛線圓框內，顯示放大後的Si膜44之剖面。
其後，將SiH4 氣體供給到晶圓W，而在殘留於凹部42內的Si膜44之表面沉積SiH4 氣體，使該Si膜44成長。由於成長前的Si膜44之粗糙較明顯，因此如圖9所示，成長當中的Si膜44之表面的平坦性也變得較低。其結果，從凹部42內之側面所成長的Si膜44之表面彼此接合，而在凹部42內形成Si層45時，在此接合部將形成微小的孔隙46及縫隙(圖10)。
參照上述比較例之處理清楚可知，依上述實施例之處理，藉由供給Cl2 氣及HBr氣體到晶圓W以進行蝕刻，可使得殘留在凹部42內的Si膜44之平坦性提高。藉此，使SiH4 氣體沉積在Si膜44上，以在凹部42內形成Si層45時，可抑制在Si層45中形成孔隙及縫隙。
如圖5所示，將於上述實施例之處理中，在進行蝕刻之後且填埋矽到凹部42內之前的Si膜44之表面粗糙度Ra設為A1。又，如圖8所示，將於比較例之處理中，在進行蝕刻之後且填埋矽到凹部42內之前的Si膜44之表面粗糙度Ra設為B1。例如，A1／B1較佳在0.8以下。又，依進行實驗而得的結果，A1為0.18nm，而B1為0.25nm。亦即，A1／B1為0.72。
又，本發明不限於上述實施例之處理，可用各種變形態樣進行。例如，於上述實施例之處理中，在供給到反應管11之前，已先將Cl2 氣及HBr氣體彼此混合。但是，將Cl2 氣及HBr氣體從個別的通路供給到反應管11內，並在晶圓W表面混合該等氣體亦可。又，於上述處理中，在氧化矽膜43上進行成膜處理，而形成Si膜44之後，將蝕刻處理及成膜處理各進行一次，藉以將矽填埋到凹部42。但是，在形成Si膜44之後，將蝕刻處理及成膜處理反覆進行複數次，藉以將矽填埋到凹部42亦可。
進而，藉由前述HCl之作用使Si膜44之表面平坦化時，不供給HBr氣體，而將該HCl氣體設為粗糙抑制氣體，並供給到反應管11內，以Cl2 氣進行蝕刻處理亦可。又，HI(碘化氫)氣體和HBr氣體同樣是由鹵素及氫構成的化合物，且Br(溴)、I(碘)各自的陰電性為互相接近的值，故HBr氣體、HI氣體具有互相類似的性質。因此，即使將該HI氣體供給到反應管11內，而不供給HBr氣體，也可得到和供給HBr氣體之情形同樣的效果。因此，可供給HI氣體作為粗糙抑制氣體。又，使用於蝕刻的鹵素氣體不限於Cl2 氣，採用例如F2 (氟素)氣體或Br2 (溴)氣亦可。
(評價測試) 接下來，說明有關本發明所進行的評價測試。針對使用上述立式熱處理裝置1而形成在晶圓W之表面的Si膜44，進行和上述實施例之處理中的蝕刻處理同樣之蝕刻處理。就處理條件而言，晶圓W之溫度設為400℃，反應管11內之壓力設為26.6Pa，Cl2 氣之流量設為1000sccm。又，HBr氣體之流量係每次處理各別於0～1000sccm之範圍內變更。至於接受蝕刻處理之各晶圓W，對Si膜44之蝕刻率(每單位時間之蝕刻量)、殘留於晶圓W的Si膜44之表面的Haze(濁霧度)、及WinW進行測定。
上述濁霧度之測定，係藉由在暗視野檢查裝置將雷射光照射到晶圓W，並且針對在該裝置內之受光部接受已散射之光而產生的低頻信號作測定而進行。又，上述WinW，係藉由在晶圓W面內之複數處測定蝕刻率，並且依據下述式1進行計算而得。此值的絕對值越低，表示晶圓W面內的蝕刻之均一性越高。 WinW(±%)＝±(蝕刻率之最大值−蝕刻率之最小值)／(蝕刻率之平均值)×100／2…式1
圖11～圖13係顯示評價測試之結果的圖表。在各圖表中，橫軸皆表示HBr氣體之流量(單位：sccm)。圖11之圖表的縱軸表示蝕刻率(單位：Å／分)，圖12之圖表的縱軸表示Haze(單位：ppm)，圖13之圖表的縱軸表示WinW(單位：±%)。如圖11之圖表所示，在設定為HBr氣體之流量的0sccm～1000sccm之範圍內，HBr氣體之流量越大，蝕刻率越低。但是，在HBr氣體為0sccm時，蝕刻率為37.05Å／分，在HBr氣體為1000sccm時，蝕刻率則為28.96Å／分。此等蝕刻率之間並沒有太大的差距。也就是說，即使和Cl2 氣體一起供給HBr氣體，Cl2 氣體對Si膜44的蝕刻作用並不會受到太大的影響。
又，由圖12之圖表可知，HBr氣體之流量越大，Haze值越小。亦即，HBr氣體之流量越大，蝕刻後的Si膜44之平坦性越高。具體而言，在HBr氣體之流量為0sccm時，Haze為0.809ppm，在HBr氣體之流量為1000sccm時，蝕刻率則為0.440ppm。因此，由此評價測試之結果可確知，藉由和Cl2 氣體一起供給HBr氣體而進行蝕刻，可提高Si膜44之平坦性。另外，依此圖表，在HBr氣體之流量為250sccm以上，亦即HBr氣體之流量／Cl2 氣之流量為1／4以上的範圍之內，Haze值並無太大變化，在0.5ppm以下。也就是說，在該範圍內，尤其可將Haze抑制得較低。
如上述，在此評價測試中，HBr氣體之流量為0sccm時的Haze大致為0.8ppm，HBr氣體之流量為250sccm～1000sccm時的Haze大致為0.5ppm。依此結果，若對於上述實施例之處理，將Si膜44在其蝕刻處理結束後的表面之Haze設為Appm，且對於比較例之處理，將Si膜44在其第一次成膜處理和其蝕刻處理結束後的表面之Haze設為Bppm，則在A／B＝0.5／0.8＝0.625時，Si膜44的表面粗糙大致抑制到極限。由此可知，在A／B為0.8以下時，已充分地抑制Si膜44的表面粗糙度。而在A／B為0.7以下時，則更加充分地抑制Si膜44的表面粗糙度。在上述實施例之處理中，將HBr氣體供給到成為此種數值係屬更佳。
進而，如圖13之圖表所示，比起HBr氣體之流量為0sccm時，亦即不供給HBr氣體時的WinW值，供給HBr氣體時的WinW値相對較小。也就是說，藉由供給HBr氣體，蝕刻之面內均一性較高。具體而言，HBr氣體為0sccm時的WinW為3.19%，HBr氣體為1000sccm時的WinW2.58%。因此，藉由將HBr氣體和Cl2 氣一起供給到晶圓W而進行蝕刻，除了抑制Si膜44的粗糙之外，也可得到使得蝕刻之面內均一性提高的效果，係獲得確認。
1‧‧‧立式熱處理裝置
3‧‧‧晶圓舟
10‧‧‧晶圓舟升降機
11‧‧‧反應管
12‧‧‧內管
13‧‧‧外管
14‧‧‧歧管
15‧‧‧支持環
16‧‧‧蓋體
17‧‧‧開口部
18‧‧‧隔熱體
19‧‧‧加熱器
21‧‧‧處理氣體導入管
22A～22E‧‧‧分歧通路
23A～23E‧‧‧氣體供給源
24A～24E‧‧‧氣體供給機構
25‧‧‧排氣口
26‧‧‧排氣管
27‧‧‧閥
28‧‧‧真空泵
30‧‧‧控制部
31‧‧‧吹淨氣體導入管
32‧‧‧氣體供給源
33‧‧‧氣體供給機構
41‧‧‧矽層
42‧‧‧凹部
43‧‧‧氧化矽膜
44‧‧‧矽膜
45‧‧‧矽層
46‧‧‧孔隙
H1‧‧‧凹部42內之高度
L1‧‧‧凹部42的下部側之開口寬度
L2‧‧‧凹部42的上部側之開口寬度
Ra‧‧‧Si膜44之表面粗糙度
W‧‧‧晶圓
【圖1】依本發明之半導體製造裝置的立式熱處理裝置之縱剖面圖。 【圖2】以該立式熱處理裝置進行處理的晶圓之縱剖面圖。 【圖3】以該立式熱處理裝置進行處理的晶圓之縱剖面圖。 【圖4】以該立式熱處理裝置進行處理的晶圓之縱剖面圖。 【圖5】以該立式熱處理裝置進行處理的晶圓之縱剖面圖。 【圖6】以該立式熱處理裝置進行處理的晶圓之縱剖面圖。 【圖7】以該立式熱處理裝置進行處理的晶圓之縱剖面圖。 【圖8】採用比較例進行處理的晶圓之縱剖面圖。 【圖9】採用比較例進行處理的晶圓之縱剖面圖。 【圖10】採用比較例進行處理的晶圓之縱剖面圖。 【圖11】顯示評價測試之結果的圖表。 【圖12】顯示評價測試之結果的圖表。 【圖13】顯示評價測試之結果的圖表。
41‧‧‧矽層
42‧‧‧凹部
43‧‧‧氧化矽膜
44‧‧‧矽膜
W‧‧‧晶圓

Claims (7)

  1. 一種半導體裝置之製造方法，其特徵為包含下述步驟： 將含矽之成膜氣體供給到被處理體，而在形成於該被處理體之表面的凹部內形成矽膜； 接著，將「含有用以蝕刻該矽膜之鹵素氣體、及用以抑制由該鹵素氣體蝕刻後的矽膜之表面粗糙的粗糙抑制氣體兩者的處理氣體」供給到該被處理體； 賦予熱能到該處理氣體，而使其活性化，以對形成於該凹部之側壁的該矽膜進行蝕刻，而加大該凹部之開口寬度的蝕刻步驟；以及 然後，將該成膜氣體供給到該被處理體，使得矽沉積在殘留於該凹部內之該矽膜上，而將矽充填到該凹部內。
  2. 如申請專利範圍第1項之半導體裝置之製造方法，其中，該鹵素氣體為氯氣。
  3. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，該蝕刻步驟包含將該被處理體加熱到250℃～450℃的步驟。
  4. 如申請專利範圍第1項之半導體裝置之製造方法，其中，該處理氣體含有該粗糙抑制氣體及鹵素氣體，而令該粗糙抑制氣體之流量／該鹵素氣體之流量在1／4以上。
  5. 如申請專利範圍第1項之半導體裝置之製造方法，其中，該粗糙抑制氣體為溴化氫氣體。
  6. 如申請專利範圍第1項之半導體裝置之製造方法，其中，「由該蝕刻步驟蝕刻後的該矽膜之表面的濁霧度之值」／「構成該處理氣體的鹵素氣體及粗糙抑制氣體之中，僅供給該鹵素氣體到該被處理體而進行該蝕刻步驟時的該矽膜之表面的濁霧度之值」，此比值在0.8以下。
  7. 一種半導體製造裝置，其特徵為具備： 真空容器，收納被處理體； 加熱部，將該被處理體加熱； 成膜氣體供給部，將含矽之成膜氣體供給到該處理容器內； 蝕刻氣體供給部，將用以蝕刻矽膜之鹵素氣體供給到該處理容器內； 粗糙抑制氣體供給部，供給用以抑制由該鹵素氣體蝕刻後的矽膜之表面粗糙的粗糙抑制氣體；以及 控制部，輸出控制信號，俾實施下述步驟： 將該成膜氣體供給到被處理體，而在形成於該被處理體的表面之凹部內形成矽膜；接著，將含有該鹵素氣體及該粗糙抑制氣體的處理氣體供給到該被處理體；賦予熱能到該處理氣體而使其活性化，對形成於該凹部之側壁的該矽膜進行蝕刻，而加大該凹部之開口寬度的蝕刻步驟；然後，將該成膜氣體供給到該被處理體，使矽沉積在殘留於該凹部內之該矽膜上，而將矽充填到該凹部內。
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