JP2017224684A - 半導体装置の製造方法、熱処理装置及び記憶媒体。 - Google Patents
半導体装置の製造方法、熱処理装置及び記憶媒体。 Download PDFInfo
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- JP2017224684A JP2017224684A JP2016118196A JP2016118196A JP2017224684A JP 2017224684 A JP2017224684 A JP 2017224684A JP 2016118196 A JP2016118196 A JP 2016118196A JP 2016118196 A JP2016118196 A JP 2016118196A JP 2017224684 A JP2017224684 A JP 2017224684A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Abstract
Description
グレインサイズはシリコン膜の膜厚が大きいほど増大するが、エッチング残渣などの不純物が付着しているシリコン膜の表面に更にシリコン膜を形成すると、不純物が介在している分だけ膜厚が小さくなり、結果としてグレインサイズの増大が抑えられてしまう。
基板上の凹部内に形成されたシリコン膜の一部をドライエッチングした後の当該基板を処理容器内に搬入する工程と、
次いで前記基板を加熱しながら臭化水素ガス及びヨウ化水素ガスから選ばれるエッチングガスを真空雰囲気の処理容器内に供給して、前記凹部内の側壁に残っているシリコン膜の一部または全部を除去するエッチング工程と、
続いて、前記凹部内にシリコン膜を成膜する成膜工程と、
その後、前記シリコン膜のグレインサイズを増大させるために基板を加熱する加熱工程と、を含むことを特徴とする。
基板上の凹部内に形成されたシリコン膜の一部をドライエッチングした後の当該基板を前記処理容器内に搬入するステップと、次いで前記基板を加熱しながら臭化水素ガス及びヨウ化水素ガスから選ばれるエッチングガスを真空雰囲気の処理容器内に供給して、前記凹部内の側壁に残っているシリコン膜の表面部のエッチング残渣あるいは当該シリコン膜を除去するエッチングステップと、続いて、前記凹部内にシリコン膜を成膜する成膜ステップと、その後、前記シリコン膜のグレインサイズを増大させるために基板を加熱する加熱ステップと、を実行するように制御信号を出力する制御部を備えたことを特徴とする。
前記コンピュータプログラムは、上述の半導体装置の製造方法を実行するようにステップ群が組み込まれていることを特徴とする。
第1の実施の形態に係る半導体装置の製造方法に使用される半導体装置製造用の基板であるウエハWの表面構造の一例について説明する。図1は半導体装置の製造工程の途中段階におけるウエハWの表面構造を示す。この表面構造は、シリコン酸化層(SiO2層)100に凹部110が形成され、凹部110の下方には、単結晶シリコン層101が位置している。凹部110の内周面には、シリコン窒化膜(SiN膜)102、シリコン酸化膜(SiO2膜)103及びポリシリコンである第1のシリコン(Si)膜104が下層側からこの順に成膜されている。
またマニホールド5における支持部6の下方側の側面には、エッチングガス供給管20、3本の成膜ガス供給管21〜23及びパージガス供給管33の一端が接続されている。エッチングガス供給管20の他端側には、エッチングガスであるHBrガス供給源24が接続されており、成膜ガス供給管21〜23の他端側には、夫々ジプロピルアミノシラン(DIPAS)ガス供給源25、ジシラン(Si2H6)供給源26及びモノシラン(SiH4)ガス供給源27が接続されている。またパージガス供給管33の他端側には、パージガスである窒素(N2)ガス供給源34が接続されている。なお図8中の29〜32及び36は流量調整部であり、V1〜V5はバルブである。
そしてSiH4ガスの供給を停止し、反応容器2内にN2ガスを流し、Si膜の成膜を停止すると共に、ウエハWを450〜950℃、例えば550℃で加熱する。これにより第2のSi膜112においては、Siのグレインサイズが増大する。
また後述の検証試験3にて示すように第2のSi膜111の膜厚が厚くなることにより、Siの結晶のサイズが大きくなる傾向にある。上述の実施の形態においては、エッチング残渣などの不純物層が介在しないのでその分第2のSi膜111の膜厚が厚くなり、ウエハWを加熱したときに加熱後の結晶化した第2のSi膜112においては、Siの結晶のサイズが大きくなる。そのため高い導電性が得られる。
また第1のSi膜104の表面の不純物107及びダメージ層を除去する除去する工程、第2のSi膜111を成膜する工程及びウエハWを加熱して第2のSi膜112を結晶化させる工程を同じ縦型熱処理装置1において行うことができる。そのためウエハWの搬送の際の有機物の付着や自然酸化膜の生成を抑制することができる。
また第2の実施の形態に係る半導体装置の製造方法として、第1のSi膜104の表面の自然酸化膜をドライエッチングにより除去してもよく、さらにドライエッチングを縦型熱処理装置1内において行うようにしてもよい。例えば図9に示すように縦型熱処理装置1にHFガス及びNH3ガスを供給するように構成する。なお図9は、図8に示す縦型熱処理装置1を略記しており、HFガス及びNH3ガスは、例えば図8に示すマニホールド5における支持部6の下方側に供給される。
本発明の効果を検証するためウエハWのSiO2層100に形成された凹部110内に成膜された第1のSi膜104をHBrガスを用いてエッチングしたときの凹部110の深さ方向におけるエッチング量の均一性について調べた。図10(a)に示すようにウエハWに深さ1500nm、幅40nmの大きさの凹部110を形成し、表面に第1のSi膜104成膜したウエハWを用いた。
図10(b)はこの結果を示し、各ウエハWにて測定されたP1〜P5の各高さ位置におけるエッチング量をP1〜P5ごとに平均した値を示す。この結果に寄れば、ウエハWの表面のP1におけるエッチング量は、4.25Åであり、P1のエッチング量を100とすると、凹部110の内部のP2〜P4のエッチング量は、95.3〜110.9であった。
また本発明の効果を検証するためHBrガスによるSi膜、SiO2膜及びSiN膜のエッチングの選択比を調べた。まず検査用ウエハの表面に、Si膜、SiO2膜及びSiN膜を夫々成膜し、第1の実施の形態に示した縦型熱処理装置1を用い550℃で加熱してHBrガスを供給してエッチングを行った。またSi膜を形成した検査用ウエハを530℃で加熱し、HBrガスを供給してエッチングを行った。
この結果によればウエハWを加熱して、HBrガスを供給した時にSiO2膜及びSiN膜に対してSi層を高い選択比でエッチングすることができると言える。
さらに検査用ウエハにSi膜を成膜し加熱を行いSiを結晶化させたときのSi膜の膜厚と結晶の大きさとの関係を調べた。第1の実施の形態に示した縦型熱処理装置1により、400Å及び1500Åに成膜した検査用ウエハを各々550℃で加熱し、各々流離サイズを調べた。図12はこの結果を示し、成膜したSi膜の膜厚とSiの結晶の大きさとの関係を示す特性図である。図12に示すようにSi膜の膜厚が厚くなるに従い、Siの結晶のサイズが大きくなることが分かる。
ドライエッチングガスの種類によっては、エッチング後にウエハWに残存するガスの成分により、エッチング後に成膜される膜に表面の粗さの劣化やなどの劣化が見られることがある。そこで検査用のウエハに1回目のSi膜を成膜した後、HBrガスにより、すべてのSi膜をエッチングした後、2回目のSi層の成膜を行い表面粗さ及び成膜されたSi膜の膜厚について調べた。
1回目のSi層の成膜は、第1の実施の形態に示した縦型熱処理装置1を用い、5.0nmを目標膜厚に設定して成膜した。次いで同じ縦型熱処理装置1内において、HBrガスを供給してSi層をすべて除去した後、同じ縦型熱処理装置1内において、Si膜を3.5nmを目標膜厚に設定して成膜した。
この結果によれば、HBrによるエッチングを行い再度Siを成膜したときに表面粗さRaは、低下していなかった。またSi層の膜厚もほぼ目標膜厚で成膜されており、HBrにより、Si膜をエッチングした後も成膜効率が低下しなかった。
2 反応容器
3 内管
4 外管
9 蓋体
10 ウエハボート
11 ボートエレベータ
13 昇温用ヒータ
90 制御部
100 SiO2層
101 単結晶シリコン
102 SiN膜
103 SiO2膜
104 第1のSi膜
107 残渣
110 凹部
111 第2のSi膜
Claims (10)
- 基板上に半導体装置を形成する半導体装置の製造方法において、
基板上の凹部内に形成されたシリコン膜の一部をドライエッチングした後の当該基板を処理容器内に搬入する工程と、
次いで前記基板を加熱しながら臭化水素ガス及びヨウ化水素ガスから選ばれるエッチングガスを真空雰囲気の処理容器内に供給して、前記凹部内の側壁に残っているシリコン膜の一部または全部を除去するエッチング工程と、
続いて、前記凹部内にシリコン膜を成膜する成膜工程と、
その後、前記シリコン膜のグレインサイズを増大させるために基板を加熱する加熱工程と、を含むことを特徴とする半導体装置の製造方法。 - 前記処理容器内に搬入される基板は、シリコン酸化膜の一部が露出していることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記処理容器内に搬入される基板は、シリコン窒化膜の一部が露出していることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記処理容器に搬入される基板の凹部の底面には、単結晶シリコンが露出し、当該単結晶シリコンは前記シリコン膜と共に導電路を形成するものであることを特徴とする請求項1ないし3のいずれか一項に記載の半導体装置の製造方法。
- 前記エッチング工程、成膜工程及び加熱工程は、同一の処理容器内にて順次行われることを特徴とする請求項1ないし4のいずれか一項に記載の半導体装置の製造方法。
- 前記エッチング工程の前に、前記同一の処理容器内にてCOR処理を行う工程を行うことを特徴とする請求項1ないし5のいずれか一項に記載の半導体装置の製造方法。
- 前記エッチング工程のプロセス温度は、250℃〜750℃に設定されることを特徴とする請求項1ないし6のいずれか一項に記載の半導体装置の製造方法。
- 真空雰囲気を形成するための処理容器内に設けられた載置部に半導体装置製造用の基板を載置し、処理容器内を真空排気すると共に基板を加熱しながら処理ガスを供給して基板に対して熱処理を行う熱処理装置において、
基板上の凹部内に形成されたシリコン膜の一部をドライエッチングした後の当該基板を前記処理容器内に搬入するステップと、次いで前記基板を加熱しながら臭化水素ガス及びヨウ化水素ガスから選ばれるエッチングガスを真空雰囲気の処理容器内に供給して、前記凹部内の側壁に残っているシリコン膜の表面部のエッチング残渣あるいは当該シリコン膜を除去するエッチングステップと、続いて、前記凹部内にシリコン膜を成膜する成膜ステップと、その後、前記シリコン膜のグレインサイズを増大させるために基板を加熱する加熱ステップと、を実行するように制御信号を出力する制御部を備えたことを特徴とする熱処理装置。 - 前記制御部は、前記基板を前記処理容器内に搬入するステップを実行した後、更にCORを行うステップを前記エッチングステップの前に実行することを特徴とする請求項8に記載の熱処理装置。
- 真空雰囲気を形成するための処理容器内に設けられた載置部に半導体装置製造用の基板を載置し、処理容器内を真空排気すると共に基板を加熱しながら処理ガスを供給して基板に対して熱処理を行う熱処理装置に用いられるコンピュータプログラムを記憶した記憶媒体であって、
前記コンピュータプログラムは、請求項1ないし7のいずれか一項に記載された半導体装置の製造方法を実行するようにステップ群が組み込まれていることを特徴とする記憶媒体。
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WO2015115002A1 (ja) * | 2014-01-29 | 2015-08-06 | 株式会社日立国際電気 | 微細パターンの形成方法、半導体装置の製造方法、基板処理装置及び記録媒体 |
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KR102138961B1 (ko) | 2020-07-28 |
TWI675416B (zh) | 2019-10-21 |
US9997365B2 (en) | 2018-06-12 |
JP6623943B2 (ja) | 2019-12-25 |
US20170358458A1 (en) | 2017-12-14 |
CN107507768A (zh) | 2017-12-22 |
CN107507768B (zh) | 2021-11-23 |
KR20170141135A (ko) | 2017-12-22 |
TW201810418A (zh) | 2018-03-16 |
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