JP6690333B2 - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6690333B2 JP6690333B2 JP2016053132A JP2016053132A JP6690333B2 JP 6690333 B2 JP6690333 B2 JP 6690333B2 JP 2016053132 A JP2016053132 A JP 2016053132A JP 2016053132 A JP2016053132 A JP 2016053132A JP 6690333 B2 JP6690333 B2 JP 6690333B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- silicon carbide
- semiconductor device
- carbide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 68
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 67
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 5
- 239000010410 layer Substances 0.000 description 77
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 23
- 239000011229 interlayer Substances 0.000 description 18
- 230000015556 catabolic process Effects 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本発明に係るSiC半導体デバイスの実施の形態として、縦型MOSFETを例に説明する。図1〜図5は、それぞれ実施の形態にかかる炭化珪素半導体装置としての縦型MOSFETの製造方法を示す断面図である。
2 n-型SiCエピ層
3 pチャネル層
4 n+ソース層
5 p+コンタクト層
6 ゲート酸化膜
7 ドープトポリシリコン
8 層間絶縁膜
11 第一層のTiN膜
12 第二層のTiN膜
20 酸化層
Claims (10)
- 炭化珪素からなる半導体基板と、該半導体基板の表面の一部に形成されたゲート酸化膜と、該ゲート酸化膜上に形成されたゲート電極と、該ゲート電極を覆うように形成された絶縁膜と、該絶縁膜を覆うように形成されたTiN膜と、前記絶縁膜および前記TiN膜に覆われていない前記半導体基板の表面に形成されたNiシリサイド層と、を有する炭化珪素半導体装置において、
前記TiN膜が二層以上を有し、下層の第一層と、上層の第二層がそれぞれ不連続な柱状構造であって、該第一層と該第二層との間に酸化層が形成された構造であることを特徴とする炭化珪素半導体装置。 - 前記Niシリサイド層は、前記半導体基板の表面にのみ形成されていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記第一層の厚みよりも前記第二層の厚みが厚いことを特徴とする請求項1又は2に記載の炭化珪素半導体装置。
- 前記第一層の厚みが10〜50nmであり、前記第二層の厚みが50〜90nmであることを特徴とする請求項3に記載の炭化珪素半導体装置。
- 前記第一層の厚みと前記第二層の厚みが、合計で100nm以下であることを特徴とする請求項4に記載の炭化珪素半導体装置。
- 前記第一層の結晶の太さより前記第二層の結晶の太さが太いことを特徴とする請求項1又は2に記載の炭化珪素半導体装置。
- 炭化珪素からなる半導体基板の表面に、ゲート酸化膜を形成する工程と、前記ゲート酸化膜上にゲート電極を形成する工程と、前記ゲート酸化膜およびゲート電極上に絶縁膜を形成する工程と、前記絶縁膜を開口し前記半導体基板に到達するコンタクト孔を設ける工程と、前記半導体基板の表面側全体にTiN膜を成膜する工程と、前記コンタクト孔底面に形成された前記TiN膜を除去する工程と、前記半導体基板の表面にNi膜を成膜し、前記コンタクト孔底面にNiシリサイド層を形成する工程と、前記半導体基板の全体を急速加熱する工程と、を含む炭化珪素半導体装置の製造方法において、
前記TiN膜として不連続な柱状構造な二層以上を成膜したことを特徴とする炭化珪素半導体装置の製造方法。 - 前記TiN膜の成膜では、第一層の成膜後に一度成膜装置より取り出し、
前記第一層の層上に再度第二層の成膜をすることを特徴とする請求項7に記載の炭化珪素半導体装置の製造方法。 - 前記TiN膜の成膜では、第一層の成膜後に一度プロセスを中断し、チャンバ内を酸素雰囲気にした状態で放置し、
真空引き後に前記第一層の層上に第二層の成膜をすることを特徴とする請求項7に記載の炭化珪素半導体装置の製造方法。 - 前記TiN膜の成膜では、第一層の成膜後に一度成膜装置より取り出し、酸素プラズマ処理で表面を酸化させた後に、
前記第一層の層上に第二層の成膜をすることを特徴とする請求項7に記載の炭化珪素半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016053132A JP6690333B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US15/445,156 US9887270B2 (en) | 2016-03-16 | 2017-02-28 | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016053132A JP6690333B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017168687A JP2017168687A (ja) | 2017-09-21 |
JP6690333B2 true JP6690333B2 (ja) | 2020-04-28 |
Family
ID=59855913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016053132A Active JP6690333B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9887270B2 (ja) |
JP (1) | JP6690333B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7006118B2 (ja) * | 2017-10-17 | 2022-01-24 | 富士電機株式会社 | 半導体装置及びその製造方法 |
JP7471199B2 (ja) | 2020-11-12 | 2024-04-19 | 三菱電機株式会社 | 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2541657B2 (ja) * | 1988-04-20 | 1996-10-09 | 富士通株式会社 | 拡散障壁構造及びその製造方法 |
JPH03185722A (ja) * | 1989-12-14 | 1991-08-13 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0427163A (ja) * | 1990-05-23 | 1992-01-30 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP3201061B2 (ja) * | 1993-03-05 | 2001-08-20 | ソニー株式会社 | 配線構造の製造方法 |
JP3280803B2 (ja) * | 1994-08-18 | 2002-05-13 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JPH08181212A (ja) * | 1994-12-26 | 1996-07-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2001177074A (ja) * | 1999-12-15 | 2001-06-29 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US6365496B1 (en) * | 2000-11-16 | 2002-04-02 | Stmicroelectronics, Inc. | Elimination of junction spiking using soft sputter etch and two step tin film during the contact barrier deposition process |
JP2002343741A (ja) * | 2001-05-15 | 2002-11-29 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
JP3888330B2 (ja) | 2003-04-23 | 2007-02-28 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP5694119B2 (ja) * | 2010-11-25 | 2015-04-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP6086360B2 (ja) * | 2012-04-27 | 2017-03-01 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
EP3043376B1 (en) * | 2013-09-05 | 2021-03-03 | Fuji Electric Co., Ltd. | Method for manufacturing silicon carbide semiconductor element |
JP6192190B2 (ja) * | 2014-03-11 | 2017-09-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
-
2016
- 2016-03-16 JP JP2016053132A patent/JP6690333B2/ja active Active
-
2017
- 2017-02-28 US US15/445,156 patent/US9887270B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9887270B2 (en) | 2018-02-06 |
US20170271468A1 (en) | 2017-09-21 |
JP2017168687A (ja) | 2017-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102334190B (zh) | 半导体装置及其制造方法 | |
JP6052481B2 (ja) | 半導体装置 | |
JP6086360B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP5994604B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
TWI527157B (zh) | Semiconductor device and manufacturing method thereof | |
JP2010171417A (ja) | 半導体装置 | |
JP6802454B2 (ja) | 半導体装置およびその製造方法 | |
JP7381643B2 (ja) | 半導体装置の製造方法 | |
JP6197957B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2017092355A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2017168602A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6869376B2 (ja) | 半導体装置 | |
US9324860B2 (en) | Semiconductor device | |
JP2015126080A (ja) | 半導体装置 | |
JP6690333B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP2009043880A (ja) | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 | |
JP2015056644A (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP6822089B2 (ja) | 炭化珪素半導体装置の製造方法、および炭化珪素半導体装置 | |
WO2016114055A1 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
US10032894B2 (en) | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device | |
JP2017092364A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6724444B2 (ja) | 炭化珪素半導体素子および炭化珪素半導体素子の製造方法 | |
JP2014241426A (ja) | 半導体装置 | |
JP2016058661A (ja) | 半導体装置 | |
JP2022180233A (ja) | 炭化珪素半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190214 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191021 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191029 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191223 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200310 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200323 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6690333 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |