JP6651257B2 - 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置 - Google Patents

被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置 Download PDF

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Publication number
JP6651257B2
JP6651257B2 JP2016111544A JP2016111544A JP6651257B2 JP 6651257 B2 JP6651257 B2 JP 6651257B2 JP 2016111544 A JP2016111544 A JP 2016111544A JP 2016111544 A JP2016111544 A JP 2016111544A JP 6651257 B2 JP6651257 B2 JP 6651257B2
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Japan
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workpiece
modified layer
image
projection
light
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JP2016111544A
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English (en)
Japanese (ja)
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JP2017220480A (ja
Inventor
百合子 里
百合子 里
田中　圭
圭 田中
高橋　邦充
邦充 高橋
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Disco Corp
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Disco Corp
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Priority to JP2016111544A priority Critical patent/JP6651257B2/ja
Priority to TW106114601A priority patent/TWI708285B/zh
Priority to KR1020170067755A priority patent/KR102285101B1/ko
Priority to CN201710405150.4A priority patent/CN107464762B/zh
Publication of JP2017220480A publication Critical patent/JP2017220480A/ja
Application granted granted Critical
Publication of JP6651257B2 publication Critical patent/JP6651257B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2016111544A 2016-06-03 2016-06-03 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置 Active JP6651257B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016111544A JP6651257B2 (ja) 2016-06-03 2016-06-03 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置
TW106114601A TWI708285B (zh) 2016-06-03 2017-05-03 被加工物的檢查方法、檢查裝置、雷射加工裝置、及擴張裝置
KR1020170067755A KR102285101B1 (ko) 2016-06-03 2017-05-31 피가공물의 검사 방법, 검사 장치, 레이저 가공 장치 및 확장 장치
CN201710405150.4A CN107464762B (zh) 2016-06-03 2017-05-31 被加工物的检查方法、检查装置、激光加工装置、扩展装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016111544A JP6651257B2 (ja) 2016-06-03 2016-06-03 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置

Publications (2)

Publication Number Publication Date
JP2017220480A JP2017220480A (ja) 2017-12-14
JP6651257B2 true JP6651257B2 (ja) 2020-02-19

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JP2016111544A Active JP6651257B2 (ja) 2016-06-03 2016-06-03 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置

Country Status (4)

Country Link
JP (1) JP6651257B2 (zh)
KR (1) KR102285101B1 (zh)
CN (1) CN107464762B (zh)
TW (1) TWI708285B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111315289B (zh) 2017-11-15 2023-08-08 日本电信电话株式会社 复合配线、信号采集部件及其制造方法
JP7112204B2 (ja) * 2018-02-07 2022-08-03 株式会社ディスコ 非破壊検出方法
JP7256604B2 (ja) * 2018-03-16 2023-04-12 株式会社ディスコ 非破壊検出方法
JP7027215B2 (ja) * 2018-03-27 2022-03-01 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置
JP6988669B2 (ja) * 2018-04-24 2022-01-05 株式会社デンソー レーザ照射されたニッケル膜の検査方法
JP7217165B2 (ja) * 2019-02-14 2023-02-02 株式会社ディスコ チャックテーブル及び検査装置
JP7178491B2 (ja) * 2019-04-19 2022-11-25 東京エレクトロン株式会社 処理装置及び処理方法
JP7373950B2 (ja) * 2019-09-12 2023-11-06 株式会社ディスコ レーザー加工装置および保護ウィンドウ確認方法
JP7427337B2 (ja) * 2020-04-03 2024-02-05 株式会社ディスコ ウエーハの検査方法
JP7455476B2 (ja) 2020-05-28 2024-03-26 株式会社ディスコ ウエーハ検査装置、及びウエーハ検査方法
JP2022030051A (ja) * 2020-08-06 2022-02-18 Ｔｏｗａ株式会社 切断装置、及び、切断品の製造方法
JP2023023328A (ja) 2021-08-05 2023-02-16 株式会社ディスコ 検査装置
WO2023209904A1 (ja) * 2022-04-27 2023-11-02 ヤマハ発動機株式会社 ダイシング装置、半導体チップの製造方法および半導体チップ
WO2023209887A1 (ja) * 2022-04-27 2023-11-02 ヤマハ発動機株式会社 エキスパンド装置、半導体チップの製造方法および半導体チップ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587004A (en) * 1978-12-25 1980-07-01 Hitachi Zosen Corp Surface-property measuring method
JP2005109324A (ja) * 2003-10-01 2005-04-21 Tokyo Seimitsu Co Ltd レーザーダイシング装置
JP4354262B2 (ja) * 2003-12-08 2009-10-28 株式会社ディスコ レーザー加工された変質層の確認方法
JP2005177763A (ja) * 2003-12-16 2005-07-07 Disco Abrasive Syst Ltd レーザー加工された変質層の確認装置
JP4402973B2 (ja) 2004-02-09 2010-01-20 株式会社ディスコ ウエーハの分割方法
US9138913B2 (en) * 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
JP2008012542A (ja) * 2006-07-03 2008-01-24 Hamamatsu Photonics Kk レーザ加工方法
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP5833362B2 (ja) * 2011-07-05 2015-12-16 株式会社ディスコ サファイア基板の加工方法
JP6001931B2 (ja) * 2012-06-14 2016-10-05 株式会社ディスコ ウェーハの加工方法
JP2014082418A (ja) * 2012-10-18 2014-05-08 Disco Abrasive Syst Ltd レーザー加工装置
WO2014080918A1 (ja) * 2012-11-20 2014-05-30 古河電気工業株式会社 半導体チップの製造方法およびそれに用いる薄膜研削用表面保護テープ
JP2014223672A (ja) * 2013-04-25 2014-12-04 三菱マテリアル株式会社 回転体のレーザ加工方法及び加工装置
JP5603453B1 (ja) * 2013-04-26 2014-10-08 古河電気工業株式会社 半導体ウェハ保護用粘着テープ
JP6224462B2 (ja) * 2014-01-09 2017-11-01 株式会社ディスコ レーザー加工装置における加工送り機構の作動特性検出方法およびレーザー加工装置
JP2015207604A (ja) * 2014-04-17 2015-11-19 株式会社ディスコ ウェーハの加工方法
JP6604715B2 (ja) * 2014-09-12 2019-11-13 株式会社ディスコ レーザー加工装置
JP6347714B2 (ja) * 2014-10-02 2018-06-27 株式会社ディスコ ウエーハの加工方法
JP6360411B2 (ja) * 2014-10-09 2018-07-18 株式会社ディスコ ウエーハの加工方法

Also Published As

Publication number Publication date
KR20170137639A (ko) 2017-12-13
JP2017220480A (ja) 2017-12-14
TWI708285B (zh) 2020-10-21
CN107464762A (zh) 2017-12-12
CN107464762B (zh) 2022-10-18
TW201743373A (zh) 2017-12-16
KR102285101B1 (ko) 2021-08-02

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