JP7455476B2 - ウエーハ検査装置、及びウエーハ検査方法 - Google Patents
ウエーハ検査装置、及びウエーハ検査方法 Download PDFInfo
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- JP7455476B2 JP7455476B2 JP2020093565A JP2020093565A JP7455476B2 JP 7455476 B2 JP7455476 B2 JP 7455476B2 JP 2020093565 A JP2020093565 A JP 2020093565A JP 2020093565 A JP2020093565 A JP 2020093565A JP 7455476 B2 JP7455476 B2 JP 7455476B2
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- 238000007689 inspection Methods 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 18
- 238000003384 imaging method Methods 0.000 claims description 58
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- 230000003287 optical effect Effects 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 55
- 239000000463 material Substances 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
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Description
1a 表面
1b 裏面
3 分割予定ライン
3a 改質層
5 デバイス
7 フレーム
9 シート
11 フレームユニット
13 撮像画像
15 線
2 レーザ加工装置
4 レーザ加工ユニット
4a 加工ヘッド
4b 集光点
6 レーザビーム
8 ウエーハ検査装置
10 基台
12,22 移動ユニット
14,24 ガイドレール
16,26 移動テーブル
18,28 ボールネジ
20,30 パルスモータ
32 カバー
34 保持テーブル
34a 上面
34b クランプ
36 支持部
38 撮像ユニット
40 表示ユニット
42 結像レンズ
44 スプリッター
44a,44b 界面
46 結像点
48 カメラ
50,62 光路
52 光源
54 光ファイバー
56 点光源
58 コリメートレンズ
60 集光レンズ
64 光
66,68a,68b 反射光
66a,66b 光
Claims (3)
- 内部に改質層が形成されたウエーハを検査するウエーハ検査装置であって、
裏面側を上方に露出した状態で該ウエーハを保持できる保持テーブルと、
該保持テーブルに保持された該ウエーハの該裏面側に照射される光を発する点光源と、
該点光源から発せられ該ウエーハの該裏面に照射された該光の反射光を撮像する撮像ユニットと、を備え、
該撮像ユニットは、該保持テーブルに保持されたウエーハに対面する結像レンズと、該結像レンズの結像点に位置づけられたスプリッターと、該スプリッターによって分岐された第一の光路上に配設されたカメラと、を含み、
該点光源は、該スプリッターによって分岐された第二の光路上に配設され、
該点光源が発する該光は、レーザビームであり、
該第二の光路には、該点光源から発せられた該光を平行光に生成するコリメートレンズと、該コリメートレンズによって生成された該平行光を該スプリッターに集光する集光レンズと、が配設されていることを特徴とするウエーハ検査装置。 - 該保持テーブルと、該撮像ユニットと、を相対的に移動させる移動ユニットをさらに備えることを特徴とする請求項1記載のウエーハ検査装置。
- 互いに交差する複数の分割予定ラインが表面に設定され、該表面の該分割予定ラインによって区画された各領域にデバイスが形成されたウエーハに、集光点を該ウエーハの内部に位置づけて該ウエーハに対して透過性を有する波長のレーザビームを照射することで複数の該分割予定ラインに沿って改質層が形成された該ウエーハを請求項1乃至請求項2のいずれかに記載のウエーハ検査装置で検査するウエーハ検査方法であって、
該ウエーハの該表面を該保持テーブルに向け、該裏面側を上方に露出させた状態で該ウエーハを該保持テーブルで保持する保持ステップと、
該点光源から発せられた該光を該コリメートレンズと、該集光レンズと、該スプリッターと、該結像レンズと、を経て該ウエーハの該裏面に照射する照射ステップと、
該照射ステップで該ウエーハの該裏面に照射されて該裏面で反射され、該結像レンズと、該スプリッターと、を経て該カメラに到達した該光の該反射光を撮像して撮像画像を形成する撮像ステップと、
該撮像ステップで得られた該撮像画像から該ウエーハの内部に形成された該改質層の形成状態を判定する判定ステップと、を備え、
該点光源が発する該光は、レーザビームであることを特徴とするウエーハ検査方法。
Priority Applications (4)
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JP2020093565A JP7455476B2 (ja) | 2020-05-28 | 2020-05-28 | ウエーハ検査装置、及びウエーハ検査方法 |
KR1020210055147A KR20210147883A (ko) | 2020-05-28 | 2021-04-28 | 웨이퍼 검사 장치, 및 웨이퍼 검사 방법 |
TW110118650A TW202144767A (zh) | 2020-05-28 | 2021-05-24 | 晶圓檢查裝置及晶圓檢查方法 |
CN202110569445.1A CN113739716A (zh) | 2020-05-28 | 2021-05-25 | 晶片检查装置和晶片检查方法 |
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JP2020093565A JP7455476B2 (ja) | 2020-05-28 | 2020-05-28 | ウエーハ検査装置、及びウエーハ検査方法 |
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JP7455476B2 true JP7455476B2 (ja) | 2024-03-26 |
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KR (1) | KR20210147883A (ja) |
CN (1) | CN113739716A (ja) |
TW (1) | TW202144767A (ja) |
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JP7320805B1 (ja) | 2021-11-24 | 2023-08-04 | Dic株式会社 | エポキシ樹脂組成物、その硬化物及び積層体 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012013614A (ja) | 2010-07-02 | 2012-01-19 | Hitachi Ltd | 鏡面検査方法及びその装置 |
JP2015005542A (ja) | 2013-06-19 | 2015-01-08 | キヤノン株式会社 | 光源装置、およびリソグラフィ装置 |
JP2017220480A (ja) | 2016-06-03 | 2017-12-14 | 株式会社ディスコ | 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置 |
JP2018140469A (ja) | 2017-02-28 | 2018-09-13 | 株式会社ディスコ | 被加工物の検査方法、被加工物の検査装置及び加工装置 |
JP2020057743A (ja) | 2018-10-04 | 2020-04-09 | 浜松ホトニクス株式会社 | レーザ加工方法、半導体デバイス製造方法及び検査装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0742903B2 (ja) | 1991-09-11 | 1995-05-15 | 日本電装株式会社 | 燃料噴射装置 |
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- 2020-05-28 JP JP2020093565A patent/JP7455476B2/ja active Active
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2021
- 2021-04-28 KR KR1020210055147A patent/KR20210147883A/ko unknown
- 2021-05-24 TW TW110118650A patent/TW202144767A/zh unknown
- 2021-05-25 CN CN202110569445.1A patent/CN113739716A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012013614A (ja) | 2010-07-02 | 2012-01-19 | Hitachi Ltd | 鏡面検査方法及びその装置 |
JP2015005542A (ja) | 2013-06-19 | 2015-01-08 | キヤノン株式会社 | 光源装置、およびリソグラフィ装置 |
JP2017220480A (ja) | 2016-06-03 | 2017-12-14 | 株式会社ディスコ | 被加工物の検査方法、検査装置、レーザー加工装置、及び拡張装置 |
JP2018140469A (ja) | 2017-02-28 | 2018-09-13 | 株式会社ディスコ | 被加工物の検査方法、被加工物の検査装置及び加工装置 |
JP2020057743A (ja) | 2018-10-04 | 2020-04-09 | 浜松ホトニクス株式会社 | レーザ加工方法、半導体デバイス製造方法及び検査装置 |
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Publication number | Publication date |
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CN113739716A (zh) | 2021-12-03 |
JP2021190532A (ja) | 2021-12-13 |
KR20210147883A (ko) | 2021-12-07 |
TW202144767A (zh) | 2021-12-01 |
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