JP6530377B2 - 半導体基板の凹部の角部を丸める方法及び装置 - Google Patents
半導体基板の凹部の角部を丸める方法及び装置 Download PDFInfo
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Description
まず、本発明の一実施形態による熱処理装置100について図1乃至図6を用いて説明する。図1は、半導体基板の搬入時又は搬出時の状態の熱処理装置100を示している。図2は、半導体基板の熱処理時の状態の熱処理装置100を示している。図3は、半導体基板の冷却時の状態の熱処理装置100を示している。また、図4は、図1における基板ホルダユニットA及びその周辺を拡大して示している。図5は、図2における基板ホルダユニットA及びその周辺を拡大して示している。図6は、加熱ユニットBの具体的構成の一例を示している。
上記本実施形態による熱処理装置100を組み込んだ基板処理システムの一例について図7を用いて説明する。
次に、上記図7に示す基板処理システムにおける熱処理装置100を用いた本実施形態による半導体基板の熱処理方法について図8A及び図8Bを用いて説明する。図8Aは、本実施形態による半導体基板の熱処理方法の事前準備を示すフローチャートである。図8Bは、本実施形態による半導体基板の熱処理方法を示すフローチャートである。
上述した本実施形態による半導体基板の熱処理方法は、トレンチを有する半導体基板を用いて半導体装置を製造する際のトレンチの開口部及び底部の角張った角部を丸めることに適用することができる。また、不純物を注入したトレンチを有する半導体基板を用いて半導体装置を製造する際のトレンチの開口部及び底部の角張った角部を丸めると共に不純物の活性化アニールに適用することができる。以下、本実施形態による熱処理方法を適用して製造される半導体装置の具体例について説明する。
実施例1では、SiC基板として、エピタキシャル成長したSiC結晶層を表面層として有するものを用意した。このSiC表面層に形成されたSiO2マスクを用いてSiCをドライエッチング法によりトレンチを形成し、フッ酸洗浄によりSiO2マスクを除去したものを用意した。
実施例2では、実施例1と同様にトレンチを有したSiC基板を用意した。実施例2は、実施例1の処理と比べてSiC基板の1600℃での保持時間を30分とした処理である。
比較例1では、実施例1と同様にトレンチを有したSiC基板を用意した。
比較例2では、実施例1と同様にトレンチを有したSiC基板を用意した。
Claims (6)
- 処理室内の排気を停止又は極めて低速にした状態であって、
分子流領域の圧力を超える圧力の不活性ガスが半導体基板に形成された凹部の表面を封止した状態であって、
前記凹部は角部を有しており、
前記半導体基板の熱処理の温度は1500℃以上2000℃以下であって、
前記半導体基板は、SiC基板であって、
前記封止した状態は、前記処理室内へのガスの導入が完全に行われておらず、かつ、排 気が完全に行われていない状態又は極めて低速に排気した状態であって、
前記半導体基板に対向する基板対向面を有した状態であって、
前記半導体基板と前記基板対向面が近接した状態であって、
前記近接した状態は、1〜25mmの距離範囲である、状態で、
前記半導体基板に対して前記熱処理を行うことを特徴とする半導体基板の凹部の角部を 丸める方法。 - 前記半導体基板に対向して放熱により前記半導体基板を加熱する前記基板対向面を有する加熱手段を用い、前記半導体基板が前記処理室内に搬送されて載置された第1の状態よりも前記半導体基板と前記基板対向面とを近接させた第2の状態で、前記半導体基板の前記熱処理を行うことを特徴とする請求項1記載の半導体基板の凹部の角部を丸める方法。
- 前記熱処理における前記半導体基板の熱処理温度が1500℃以上であり、1750℃以下である場合には、前記処理室内に封止された前記不活性ガスの圧力を10kPa以上に設定し、
前記熱処理における前記半導体基板の熱処理温度が1750℃よりも高く、2000℃以下である場合には、前記処理室内に封止された前記不活性ガスの圧力を50kPa以上に設定することを特徴とする請求項1記載の半導体基板の凹部の角部を丸める方法。 - 前記凹部は、前記半導体基板に形成されたトレンチであることを特徴とする請求項1に記載の半導体基板の凹部の角部を丸める方法。
- 半導体基板の熱処理を行うための処理室と、
前記処理室内に設けられた加熱手段と、
前記半導体基板に対向する基板対向面と、
前記加熱手段により前記半導体基板に対して前記熱処理を実行する制御装置と
を有し、
前記半導体基板は、SiC基板であって、
前記半導体基板は、凹部を有しており、
前記凹部は角部を有しており、
前記制御装置は、
前記処理室内の排気を停止又は極めて低速にした状態であって、
分子流領域の圧力を超える圧力の不活性ガスが前記凹部の表面を封止した状態であって 、
前記半導体基板の前記熱処理の温度は1500℃以上2000℃以下であって、
前記封止した状態は、前記処理室内へのガスの導入が完全に行われておらず、かつ、排 気が完全に行われていない状態又は極めて低速に排気した状態であって、
前記半導体基板と前記基板対向面が近接した状態であって、
前記近接した状態は、1〜25mmの距離範囲である、状態で、
前記半導体基板に対して前記熱処理を実行することを特徴とする半導体基板の凹部の角 部を丸める装置。 - 前記加熱手段は、前記半導体基板に対向して放熱により前記半導体基板を加熱する前記基板対向面を有し、
前記制御装置は、前記半導体基板が前記処理室内に搬送されて載置された第1の状態よりも前記半導体基板と前記基板対向面とを近接させた第2の状態で、前記半導体基板の前記熱処理を実行することを特徴とする請求項5記載の半導体基板の凹部の角部を丸める装置。
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