JP6517478B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6517478B2
JP6517478B2 JP2014161493A JP2014161493A JP6517478B2 JP 6517478 B2 JP6517478 B2 JP 6517478B2 JP 2014161493 A JP2014161493 A JP 2014161493A JP 2014161493 A JP2014161493 A JP 2014161493A JP 6517478 B2 JP6517478 B2 JP 6517478B2
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Japan
Prior art keywords
layer
insulating layer
transistor
semiconductor layer
oxide semiconductor
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JP2014161493A
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Japanese (ja)
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JP2015057819A (ja
JP2015057819A5 (enExample
Inventor
山崎　舜平
舜平 山崎
拓也 廣橋
拓也 廣橋
高橋　正弘
正弘 高橋
基 中島
基 中島
了介 渡邊
了介 渡邊
将志 津吹
将志 津吹
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014161493A priority Critical patent/JP6517478B2/ja
Publication of JP2015057819A publication Critical patent/JP2015057819A/ja
Publication of JP2015057819A5 publication Critical patent/JP2015057819A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Landscapes

  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
JP2014161493A 2013-08-09 2014-08-07 半導体装置 Active JP6517478B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014161493A JP6517478B2 (ja) 2013-08-09 2014-08-07 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013165829 2013-08-09
JP2013165829 2013-08-09
JP2014161493A JP6517478B2 (ja) 2013-08-09 2014-08-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2015057819A JP2015057819A (ja) 2015-03-26
JP2015057819A5 JP2015057819A5 (enExample) 2017-09-14
JP6517478B2 true JP6517478B2 (ja) 2019-05-22

Family

ID=52447869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014161493A Active JP6517478B2 (ja) 2013-08-09 2014-08-07 半導体装置

Country Status (3)

Country Link
US (1) US9299855B2 (enExample)
JP (1) JP6517478B2 (enExample)
KR (1) KR102304824B1 (enExample)

Families Citing this family (8)

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US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
TW201812419A (zh) * 2016-07-25 2018-04-01 半導體能源研究所股份有限公司 電晶體的製造方法及顯示裝置
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US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
CN114300471A (zh) * 2021-12-30 2022-04-08 长江存储科技有限责任公司 三维存储器及其制作方法

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