JP6500200B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP6500200B2
JP6500200B2 JP2015035858A JP2015035858A JP6500200B2 JP 6500200 B2 JP6500200 B2 JP 6500200B2 JP 2015035858 A JP2015035858 A JP 2015035858A JP 2015035858 A JP2015035858 A JP 2015035858A JP 6500200 B2 JP6500200 B2 JP 6500200B2
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JP
Japan
Prior art keywords
memory
word line
bit line
antifuse
gate electrode
Prior art date
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Active
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JP2015035858A
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English (en)
Japanese (ja)
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JP2016157873A (ja
JP2016157873A5 (https=
Inventor
秀男 葛西
秀男 葛西
谷口　泰弘
泰弘 谷口
泰彦 川嶋
泰彦 川嶋
櫻井　良多郎
良多郎 櫻井
裕 品川
裕 品川
達郎 戸谷
達郎 戸谷
貴徳 山口
貴徳 山口
福夫 大和田
福夫 大和田
信司 吉田
信司 吉田
輝男 畑田
輝男 畑田
野田　敏史
敏史 野田
貴文 加藤
貴文 加藤
哲也 村谷
哲也 村谷
奥山　幸祐
幸祐 奥山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Floadia Corp
Original Assignee
Floadia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015035858A priority Critical patent/JP6500200B2/ja
Application filed by Floadia Corp filed Critical Floadia Corp
Priority to KR1020177026913A priority patent/KR102483827B1/ko
Priority to EP16755350.2A priority patent/EP3264464B1/en
Priority to KR1020227046126A priority patent/KR102522368B1/ko
Priority to PCT/JP2016/054809 priority patent/WO2016136604A1/ja
Priority to CN201680008338.9A priority patent/CN107251222B/zh
Priority to CN202010893535.1A priority patent/CN111987101B/zh
Priority to SG11201706892UA priority patent/SG11201706892UA/en
Priority to US15/553,465 priority patent/US10074660B2/en
Priority to TW105105276A priority patent/TWI689932B/zh
Publication of JP2016157873A publication Critical patent/JP2016157873A/ja
Priority to IL254101A priority patent/IL254101B/en
Publication of JP2016157873A5 publication Critical patent/JP2016157873A5/ja
Application granted granted Critical
Publication of JP6500200B2 publication Critical patent/JP6500200B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2015035858A 2015-02-25 2015-02-25 半導体記憶装置 Active JP6500200B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2015035858A JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置
US15/553,465 US10074660B2 (en) 2015-02-25 2016-02-19 Semiconductor memory device
KR1020227046126A KR102522368B1 (ko) 2015-02-25 2016-02-19 반도체 기억 장치
PCT/JP2016/054809 WO2016136604A1 (ja) 2015-02-25 2016-02-19 半導体記憶装置
CN201680008338.9A CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置
CN202010893535.1A CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器
KR1020177026913A KR102483827B1 (ko) 2015-02-25 2016-02-19 반도체 기억 장치
EP16755350.2A EP3264464B1 (en) 2015-02-25 2016-02-19 Semiconductor memory device
SG11201706892UA SG11201706892UA (en) 2015-02-25 2016-02-19 Semiconductor memory device
TW105105276A TWI689932B (zh) 2015-02-25 2016-02-23 半導體記憶裝置
IL254101A IL254101B (en) 2015-02-25 2017-08-22 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015035858A JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2016157873A JP2016157873A (ja) 2016-09-01
JP2016157873A5 JP2016157873A5 (https=) 2018-02-01
JP6500200B2 true JP6500200B2 (ja) 2019-04-17

Family

ID=56788525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015035858A Active JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置

Country Status (9)

Country Link
US (1) US10074660B2 (https=)
EP (1) EP3264464B1 (https=)
JP (1) JP6500200B2 (https=)
KR (2) KR102483827B1 (https=)
CN (2) CN111987101B (https=)
IL (1) IL254101B (https=)
SG (1) SG11201706892UA (https=)
TW (1) TWI689932B (https=)
WO (1) WO2016136604A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276697B2 (en) * 2018-04-02 2022-03-15 Intel Corporation Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
EP3624185A4 (en) * 2018-07-17 2020-06-24 Shenzhen Weitongbo Technology Co., Ltd. ANTIFUSE, ANTIFUSE MANUFACTURING METHOD AND STORAGE DEVICE
US11456303B2 (en) * 2018-12-27 2022-09-27 Nanya Technology Corporation Fuse array structure
US11094702B1 (en) * 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
TWI744130B (zh) * 2020-12-09 2021-10-21 億而得微電子股份有限公司 低成本低電壓反熔絲陣列
US12389593B2 (en) 2021-04-13 2025-08-12 United Microelectronics Corp. One-time programmable memory cell
CN115206978A (zh) * 2021-04-13 2022-10-18 联华电子股份有限公司 一次性可编程存储单元及其制作方法
TWI769095B (zh) * 2021-10-08 2022-06-21 億而得微電子股份有限公司 高寫入效率的反熔絲陣列
CN116093067B (zh) * 2021-11-03 2025-09-05 长鑫存储技术有限公司 熔丝结构、形成方法及可编程存储器
CN116847650A (zh) * 2022-03-22 2023-10-03 长鑫存储技术有限公司 一种半导体结构及其制作方法
KR102819153B1 (ko) * 2022-05-25 2025-06-10 창신 메모리 테크놀로지즈 아이엔씨 안티퓨즈 구조, 안티퓨즈 어레이 및 메모리

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
US6798693B2 (en) 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
JP2008047702A (ja) * 2006-08-16 2008-02-28 Nec Electronics Corp 半導体記憶装置
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
JP2009147003A (ja) * 2007-12-12 2009-07-02 Toshiba Corp 半導体記憶装置
CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
WO2010026865A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
WO2010032599A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101699230B1 (ko) * 2010-08-30 2017-01-25 삼성전자주식회사 안티퓨즈 메모리 셀, 이의 제조 방법, 이를 포함하는 비휘발성 메모리 장치 및 리페어 기능을 갖는 메모리 장치
US8228730B2 (en) * 2010-08-31 2012-07-24 Micron Technology, Inc. Memory cell structures and methods
KR101088954B1 (ko) * 2011-08-26 2011-12-01 권의필 프로그램이 가능한 비휘발성 메모리
JP5219170B2 (ja) * 2011-09-21 2013-06-26 株式会社フローディア 不揮発性半導体記憶装置
KR101144440B1 (ko) * 2012-02-22 2012-05-10 권의필 비휘발성 메모리 및 그 제조방법
KR101731129B1 (ko) * 2012-08-02 2017-04-28 매그나칩 반도체 유한회사 Ｏｔｐ 메모리 셀 및 그 제조 방법
US8817518B2 (en) * 2012-08-31 2014-08-26 SK Hynix Inc. E-fuse array circuit and programming method of the same
CN104240762B (zh) * 2013-06-09 2018-06-01 中芯国际集成电路制造(上海)有限公司 反熔丝结构及编程方法
CN104347629B (zh) * 2013-07-24 2017-04-19 中芯国际集成电路制造(上海)有限公司 一种栅控二极管反熔丝单元结构及其制作方法
JP5756971B1 (ja) * 2014-10-31 2015-07-29 株式会社フローディア アンチヒューズメモリおよび半導体記憶装置

Also Published As

Publication number Publication date
CN107251222B (zh) 2020-09-25
JP2016157873A (ja) 2016-09-01
KR20170120662A (ko) 2017-10-31
TWI689932B (zh) 2020-04-01
CN111987101B (zh) 2024-08-02
EP3264464A4 (en) 2018-10-24
IL254101B (en) 2022-02-01
EP3264464B1 (en) 2021-12-22
CN111987101A (zh) 2020-11-24
IL254101A0 (en) 2017-10-31
KR20230006606A (ko) 2023-01-10
KR102522368B1 (ko) 2023-04-18
KR102483827B1 (ko) 2023-01-03
US10074660B2 (en) 2018-09-11
WO2016136604A1 (ja) 2016-09-01
TW201635302A (zh) 2016-10-01
SG11201706892UA (en) 2017-10-30
EP3264464A1 (en) 2018-01-03
US20180019248A1 (en) 2018-01-18
CN107251222A (zh) 2017-10-13

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