CN111987101B - 反熔丝存储器 - Google Patents

反熔丝存储器 Download PDF

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Publication number
CN111987101B
CN111987101B CN202010893535.1A CN202010893535A CN111987101B CN 111987101 B CN111987101 B CN 111987101B CN 202010893535 A CN202010893535 A CN 202010893535A CN 111987101 B CN111987101 B CN 111987101B
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China
Prior art keywords
memory
bit line
antifuse
word line
region
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CN202010893535.1A
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English (en)
Chinese (zh)
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CN111987101A (zh
Inventor
葛西秀男
谷口泰弘
川嶋泰彦
樱井良多郎
品川裕
户谷达郎
山口贵德
大和田福夫
吉田信司
畑田辉男
野田敏史
加藤贵文
村谷哲也
奥山幸祐
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Floadia Corp
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Floadia Corp
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Priority to CN202010893535.1A priority Critical patent/CN111987101B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN202010893535.1A 2015-02-25 2016-02-19 反熔丝存储器 Active CN111987101B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010893535.1A CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015-035858 2015-02-25
JP2015035858A JP6500200B2 (ja) 2015-02-25 2015-02-25 半導体記憶装置
PCT/JP2016/054809 WO2016136604A1 (ja) 2015-02-25 2016-02-19 半導体記憶装置
CN201680008338.9A CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置
CN202010893535.1A CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680008338.9A Division CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置

Publications (2)

Publication Number Publication Date
CN111987101A CN111987101A (zh) 2020-11-24
CN111987101B true CN111987101B (zh) 2024-08-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN202010893535.1A Active CN111987101B (zh) 2015-02-25 2016-02-19 反熔丝存储器
CN201680008338.9A Active CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置

Family Applications After (1)

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CN201680008338.9A Active CN107251222B (zh) 2015-02-25 2016-02-19 半导体存储装置

Country Status (9)

Country Link
US (1) US10074660B2 (https=)
EP (1) EP3264464B1 (https=)
JP (1) JP6500200B2 (https=)
KR (2) KR102483827B1 (https=)
CN (2) CN111987101B (https=)
IL (1) IL254101B (https=)
SG (1) SG11201706892UA (https=)
TW (1) TWI689932B (https=)
WO (1) WO2016136604A1 (https=)

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US11276697B2 (en) * 2018-04-02 2022-03-15 Intel Corporation Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
EP3624185A4 (en) * 2018-07-17 2020-06-24 Shenzhen Weitongbo Technology Co., Ltd. ANTIFUSE, ANTIFUSE MANUFACTURING METHOD AND STORAGE DEVICE
US11456303B2 (en) * 2018-12-27 2022-09-27 Nanya Technology Corporation Fuse array structure
US11094702B1 (en) * 2020-02-10 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. One-time programmable memory device including anti-fuse element and manufacturing method thereof
TWI744130B (zh) * 2020-12-09 2021-10-21 億而得微電子股份有限公司 低成本低電壓反熔絲陣列
US12389593B2 (en) 2021-04-13 2025-08-12 United Microelectronics Corp. One-time programmable memory cell
CN115206978A (zh) * 2021-04-13 2022-10-18 联华电子股份有限公司 一次性可编程存储单元及其制作方法
TWI769095B (zh) * 2021-10-08 2022-06-21 億而得微電子股份有限公司 高寫入效率的反熔絲陣列
CN116093067B (zh) * 2021-11-03 2025-09-05 长鑫存储技术有限公司 熔丝结构、形成方法及可编程存储器
CN116847650A (zh) * 2022-03-22 2023-10-03 长鑫存储技术有限公司 一种半导体结构及其制作方法
KR102819153B1 (ko) * 2022-05-25 2025-06-10 창신 메모리 테크놀로지즈 아이엔씨 안티퓨즈 구조, 안티퓨즈 어레이 및 메모리

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CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
CN103579246A (zh) * 2012-08-02 2014-02-12 美格纳半导体有限公司 一次性可编程存储器单元及其制造方法

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JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
US6798693B2 (en) 2001-09-18 2004-09-28 Kilopass Technologies, Inc. Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
JP2008047702A (ja) * 2006-08-16 2008-02-28 Nec Electronics Corp 半導体記憶装置
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
JP2009147003A (ja) * 2007-12-12 2009-07-02 Toshiba Corp 半導体記憶装置
WO2010026865A1 (en) * 2008-09-05 2010-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
WO2010032599A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US8228730B2 (en) * 2010-08-31 2012-07-24 Micron Technology, Inc. Memory cell structures and methods
KR101088954B1 (ko) * 2011-08-26 2011-12-01 권의필 프로그램이 가능한 비휘발성 메모리
JP5219170B2 (ja) * 2011-09-21 2013-06-26 株式会社フローディア 不揮発性半導体記憶装置
KR101144440B1 (ko) * 2012-02-22 2012-05-10 권의필 비휘발성 메모리 및 그 제조방법
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CN104347629B (zh) * 2013-07-24 2017-04-19 中芯国际集成电路制造(上海)有限公司 一种栅控二极管反熔丝单元结构及其制作方法
JP5756971B1 (ja) * 2014-10-31 2015-07-29 株式会社フローディア アンチヒューズメモリおよび半導体記憶装置

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CN101488502A (zh) * 2008-01-18 2009-07-22 恩益禧电子股份有限公司 非易失性半导体存储装置
CN103579246A (zh) * 2012-08-02 2014-02-12 美格纳半导体有限公司 一次性可编程存储器单元及其制造方法

Also Published As

Publication number Publication date
CN107251222B (zh) 2020-09-25
JP2016157873A (ja) 2016-09-01
KR20170120662A (ko) 2017-10-31
TWI689932B (zh) 2020-04-01
EP3264464A4 (en) 2018-10-24
IL254101B (en) 2022-02-01
EP3264464B1 (en) 2021-12-22
CN111987101A (zh) 2020-11-24
IL254101A0 (en) 2017-10-31
KR20230006606A (ko) 2023-01-10
KR102522368B1 (ko) 2023-04-18
KR102483827B1 (ko) 2023-01-03
US10074660B2 (en) 2018-09-11
WO2016136604A1 (ja) 2016-09-01
TW201635302A (zh) 2016-10-01
SG11201706892UA (en) 2017-10-30
EP3264464A1 (en) 2018-01-03
JP6500200B2 (ja) 2019-04-17
US20180019248A1 (en) 2018-01-18
CN107251222A (zh) 2017-10-13

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