JP6496579B2 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- JP6496579B2 JP6496579B2 JP2015053349A JP2015053349A JP6496579B2 JP 6496579 B2 JP6496579 B2 JP 6496579B2 JP 2015053349 A JP2015053349 A JP 2015053349A JP 2015053349 A JP2015053349 A JP 2015053349A JP 6496579 B2 JP6496579 B2 JP 6496579B2
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- substrate
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- 239000000758 substrate Substances 0.000 title claims description 218
- 238000003672 processing method Methods 0.000 title claims description 13
- 238000001179 sorption measurement Methods 0.000 claims description 39
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 238000012544 monitoring process Methods 0.000 claims description 12
- 238000012806 monitoring device Methods 0.000 claims description 11
- 230000001939 inductive effect Effects 0.000 claims description 10
- 238000005513 bias potential Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 67
- 238000001020 plasma etching Methods 0.000 description 22
- 230000002159 abnormal effect Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 238000001514 detection method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000015067 sauces Nutrition 0.000 description 2
- 101000574352 Mus musculus Protein phosphatase 1 regulatory subunit 17 Proteins 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015053349A JP6496579B2 (ja) | 2015-03-17 | 2015-03-17 | 基板処理方法及び基板処理装置 |
TW105107031A TWI686844B (zh) | 2015-03-17 | 2016-03-08 | 基板處理方法及基板處理裝置 |
KR1020160027463A KR101918810B1 (ko) | 2015-03-17 | 2016-03-08 | 기판 처리 방법 및 기판 처리 장치 |
CN201610153582.6A CN105990194B (zh) | 2015-03-17 | 2016-03-17 | 基板处理方法和基板处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015053349A JP6496579B2 (ja) | 2015-03-17 | 2015-03-17 | 基板処理方法及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016174081A JP2016174081A (ja) | 2016-09-29 |
JP6496579B2 true JP6496579B2 (ja) | 2019-04-03 |
Family
ID=57009086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015053349A Active JP6496579B2 (ja) | 2015-03-17 | 2015-03-17 | 基板処理方法及び基板処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6496579B2 (ko) |
KR (1) | KR101918810B1 (ko) |
CN (1) | CN105990194B (ko) |
TW (1) | TWI686844B (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6851270B2 (ja) * | 2017-06-16 | 2021-03-31 | 東京エレクトロン株式会社 | 静電吸着方法 |
KR102513466B1 (ko) * | 2017-08-28 | 2023-03-23 | 가부시키가이샤 크리에이티브 테크놀러지 | 정전식 피작업물 보유 방법 및 정전식 피작업물 보유 시스템 |
CN111052320B (zh) * | 2018-01-29 | 2023-04-14 | 株式会社爱发科 | 反应性离子蚀刻装置 |
JP7020311B2 (ja) * | 2018-06-14 | 2022-02-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP7052584B2 (ja) * | 2018-06-15 | 2022-04-12 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7306083B2 (ja) * | 2019-06-11 | 2023-07-11 | 日新電機株式会社 | 制御装置及び制御方法 |
KR102073789B1 (ko) * | 2019-07-05 | 2020-02-05 | 김태화 | 반도체 제조 장비용 펌프 백 스트림 방지 구조 |
KR20210006682A (ko) * | 2019-07-09 | 2021-01-19 | 세메스 주식회사 | 기판 처리 장치 |
JP2022024265A (ja) * | 2020-07-13 | 2022-02-09 | 東京エレクトロン株式会社 | 基板離脱方法及びプラズマ処理装置 |
CN111933565B (zh) * | 2020-09-27 | 2021-01-29 | 北京京仪自动化装备技术有限公司 | 用于传送机械手的晶圆吸附力调节系统及方法、手臂 |
CN114582763A (zh) * | 2022-05-06 | 2022-06-03 | 拓荆科技(北京)有限公司 | 一种晶圆吸附状态的检测方法、检测装置及控制器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06244146A (ja) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Ltd | プラズマ処理装置 |
JP4282100B2 (ja) * | 1997-08-20 | 2009-06-17 | 東京エレクトロン株式会社 | 静電チャックにおける被吸着物の離脱方法及び静電チャック |
JPH11260897A (ja) * | 1998-03-12 | 1999-09-24 | Matsushita Electric Ind Co Ltd | 基板の取り扱い方法と装置、それに用いる吸着検査方法、装置 |
US6492612B1 (en) | 1998-12-28 | 2002-12-10 | Tokyo Electron Limited | Plasma apparatus and lower electrode thereof |
JP4590031B2 (ja) * | 2000-07-26 | 2010-12-01 | 東京エレクトロン株式会社 | 被処理体の載置機構 |
JP2005072521A (ja) * | 2003-08-28 | 2005-03-17 | Hitachi Ltd | プラズマ処理装置 |
JP5127147B2 (ja) * | 2006-03-08 | 2013-01-23 | 東京エレクトロン株式会社 | 基板吸着脱離方法 |
KR100690136B1 (ko) * | 2006-05-29 | 2007-03-08 | 우범제 | 정전척의 잔류 전하 제거 장치 및 제거 방법 |
JP5315942B2 (ja) * | 2008-05-21 | 2013-10-16 | 東京エレクトロン株式会社 | 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法 |
JP5401343B2 (ja) * | 2010-01-28 | 2014-01-29 | 株式会社日立ハイテクノロジーズ | 静電チャック用電源回路、及び静電チャック装置 |
JP5503503B2 (ja) * | 2010-11-09 | 2014-05-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2013033726A (ja) * | 2011-06-27 | 2013-02-14 | Tokyo Electron Ltd | 異常検出装置及び異常検出方法 |
US8927985B2 (en) | 2012-09-20 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5971144B2 (ja) * | 2013-02-06 | 2016-08-17 | 東京エレクトロン株式会社 | 基板処理装置及び成膜方法 |
-
2015
- 2015-03-17 JP JP2015053349A patent/JP6496579B2/ja active Active
-
2016
- 2016-03-08 KR KR1020160027463A patent/KR101918810B1/ko active IP Right Grant
- 2016-03-08 TW TW105107031A patent/TWI686844B/zh active
- 2016-03-17 CN CN201610153582.6A patent/CN105990194B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101918810B1 (ko) | 2018-11-14 |
TWI686844B (zh) | 2020-03-01 |
CN105990194B (zh) | 2019-12-06 |
JP2016174081A (ja) | 2016-09-29 |
KR20160111848A (ko) | 2016-09-27 |
CN105990194A (zh) | 2016-10-05 |
TW201705194A (zh) | 2017-02-01 |
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