JP6490845B2 - 極紫外線フォトマスクポッド - Google Patents
極紫外線フォトマスクポッド Download PDFInfo
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- JP6490845B2 JP6490845B2 JP2018010514A JP2018010514A JP6490845B2 JP 6490845 B2 JP6490845 B2 JP 6490845B2 JP 2018010514 A JP2018010514 A JP 2018010514A JP 2018010514 A JP2018010514 A JP 2018010514A JP 6490845 B2 JP6490845 B2 JP 6490845B2
- Authority
- JP
- Japan
- Prior art keywords
- extreme ultraviolet
- slit
- base
- contact
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000004807 localization Effects 0.000 claims description 19
- 238000005192 partition Methods 0.000 claims description 13
- 230000004308 accommodation Effects 0.000 claims description 8
- 239000010419 fine particle Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000003749 cleanliness Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 102100033121 Transcription factor 21 Human genes 0.000 description 3
- 101710119687 Transcription factor 21 Proteins 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 101000873785 Homo sapiens mRNA-decapping enzyme 1A Proteins 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 102100035856 mRNA-decapping enzyme 1A Human genes 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67353—Closed carriers specially adapted for a single substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles
Description
10 外部ケース
11 ケース上部
12 ケース下部
13 収容空間
20 内部ケース
21 ベース
22 上蓋
23 フォトマスク搭載面
31 ベース
210、310 上表面
211、311 搭載面
212、312 スリット
213、313 第一接面
214、314 定位部
215、315 枠縁
216 収容溝
217 仕切部
221 凹チャンバー
222 降格面
223 第二接面
224 導引ブロック
225 弾性部
226 吸気口
R 極紫外線フォトマスク
A−A’ 断面線
Claims (10)
- 外部ケースと内部ケースからなり、前記外部ケースは互いに対応するケース上部とケース下部を包括し、前記内部ケースを収容するために用いられる収容空間を定義し、前記内部ケースは、
上表面と枠縁とを有し、前記上表面にフォトマスク搭載位置を定義する凸出した複数の定位部を設け、前記枠縁が前記上表面と連接し、且つ前記上表面を囲繞しているベースと、
前記ベースと当接するために用いられ、並びに凹チャンバーと第二接面とを有し、前記凹チャンバーは、前記極紫外線フォトマスクを収容するために用いられ、前記第二接面と、前記上表面が有する第一接面とは互いに対応し、密閉状態を形成する上蓋と、を包括し、前記上表面は、
極紫外線フォトマスクを前記フォトマスク搭載位置に設置するために用いる搭載面と、
連続環状構造を有し、その底部が前記搭載面より低いスリットと、
前記第一接面と、を包含し、前記搭載面、前記スリット、前記第一接面の順で前記上表面の内側から前記枠縁に向かって配置されていることを特徴とする極紫外線フォトマスクポッド。 - 前記スリットは完全連続的に前記搭載面を囲繞しており、前記第一接面は、完全連続的に前記スリットを囲繞していることを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
- 前記上表面にそれぞれ連続環状構造である複数の前記スリットを包含し、これらのスリットは、前記搭載面と前記第一接面との間に位置し、且つすべての前記スリットは個別で前記定位部を囲繞することを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
- 前記第一接面が、前記搭載面より低く、また前記スリットの底部が、前記第一接面より低いことを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
- 前記上表面は、前記スリットと連通する少なくとも1つの収容溝を包含し、前記収容溝の底部は前記スリットの底部より低いことを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
- 前記搭載面と平行である方向において、前記収容溝の横幅が、前記スリットよりも広いことを特徴とする請求項5に記載の極紫外線フォトマスクポッド。
- 前記上蓋は、前記凹チャンバーと前記第二接面との間に位置する降格面を有し、前記降格面と前記第二接面は、異なる水平面上に位置し、前記ベースにある前記上表面と隙間を形成していることを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
- 前記上蓋には、前記上蓋と前記ベースが当接して前記内部ケースが収容空間内に収容される際において、前記極紫外線フォトマスクと当接し且つ前記極紫外線フォトマスクに圧力を加えるための、前記定位部の位置に対応して配置される複数の弾性部が備えられることを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
- 前記上蓋は、複数の導引ブロックを包含し、前記上蓋と前記ベースが当接する際、前記ベースに向かって延伸する方式で前記上蓋に設置され、前記ベースにある前記枠縁に弾性当接するために用いることを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
- 前記ベースは、前記スリット内に仕切部を包含し、前記上蓋と前記ベースが当接する際、前記仕切り部の頂部が前記第二接面と隙間なく当接することを特徴とする請求項1に記載の極紫外線フォトマスクポッド。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762450172P | 2017-01-25 | 2017-01-25 | |
US62/450,172 | 2017-01-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018120221A JP2018120221A (ja) | 2018-08-02 |
JP6490845B2 true JP6490845B2 (ja) | 2019-03-27 |
Family
ID=62906320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018010514A Active JP6490845B2 (ja) | 2017-01-25 | 2018-01-25 | 極紫外線フォトマスクポッド |
Country Status (5)
Country | Link |
---|---|
US (1) | US10670976B2 (ja) |
JP (1) | JP6490845B2 (ja) |
KR (1) | KR102127783B1 (ja) |
CN (1) | CN108375872B (ja) |
TW (1) | TWI666510B (ja) |
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2018
- 2018-01-25 JP JP2018010514A patent/JP6490845B2/ja active Active
- 2018-01-25 TW TW107102654A patent/TWI666510B/zh active
- 2018-01-25 KR KR1020180009114A patent/KR102127783B1/ko active IP Right Grant
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CN108375872A (zh) | 2018-08-07 |
CN108375872B (zh) | 2022-04-15 |
KR102127783B1 (ko) | 2020-06-30 |
TWI666510B (zh) | 2019-07-21 |
US10670976B2 (en) | 2020-06-02 |
TW201827920A (zh) | 2018-08-01 |
KR20180087869A (ko) | 2018-08-02 |
JP2018120221A (ja) | 2018-08-02 |
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