JP6466894B2 - 露光方法、及びデバイス製造方法 - Google Patents
露光方法、及びデバイス製造方法 Download PDFInfo
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- JP6466894B2 JP6466894B2 JP2016219762A JP2016219762A JP6466894B2 JP 6466894 B2 JP6466894 B2 JP 6466894B2 JP 2016219762 A JP2016219762 A JP 2016219762A JP 2016219762 A JP2016219762 A JP 2016219762A JP 6466894 B2 JP6466894 B2 JP 6466894B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Description
本願は、2003年7月9日に出願された特願2003−272617号に対し優先権を主張し、その内容をここに援用する。
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
V光)などが用いられる。本実施形態においてはArFエキシマレーザ光が用いられる。
Claims (14)
- 投影光学系の終端部の光学素子を囲むように配置された流路形成部材の下方に基板を配置することと、
前記流路形成部材に設けられた液体供給口からの液体供給と前記流路形成部材に設けられた液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸領域を形成することと、
前記基板の表面の一部に形成された前記液浸領域の液体と前記投影光学系とを介して前記基板を露光することと、を含み、
前記流路形成部材には、前記光学素子の先端部を内部に配置可能な穴部が形成されており、前記穴部に配置された前記光学素子と前記流路形成部材との間には微小間隙が形成され、
前記微小間隙を形成する、前記光学素子と前記流路形成部材の少なくとも一方の面の少なくとも一部は撥液処理されている露光方法。 - 前記流路形成部材は、前記光学素子の先端部を内部に配置可能な穴部を有し、
前記光学素子と前記微小間隙を介して対向する前記穴部の内側面の少なくとも一部が撥液処理されている請求項1記載の露光方法。 - 前記撥液処理されている部分は、前記微小間隙の下端部より上方に離れている請求項1又は2記載の露光方法。
- 前記撥液処理されている部分は、フッ素系化合物の膜、またはシリコン化合物の膜、または合成樹脂の膜を含む請求項1〜3のいずれか一項記載の露光方法。
- 前記光学素子は、前記微小間隙よりも上方で支持部材に支持されている請求項1〜4のいずれか一項記載の露光方法。
- 前記流路形成部材は、前記光学素子を支持する支持部材とは別の支持部材に支持されている請求項5記載の露光方法。
- 投影光学系の終端部の光学素子を囲むように配置された流路形成部材の下方に基板を配置することと、
前記流路形成部材に設けられた液体供給口からの液体供給と前記流路形成部材に設けられた液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸領域を形成することと、
前記基板の表面の一部に形成された前記液浸領域の液体と前記投影光学系とを介して前記基板を露光することと、を含み、
前記流路形成部材には、前記光学素子の先端部を内部に配置可能な穴部が形成されており、前記穴部に配置された前記光学素子は、前記光学素子の側面と前記流路形成部材の内側面との間に形成される微小間隙よりも上方で支持部材に支持され、
前記流路形成部材は、前記光学素子を支持する支持部材とは別の支持部材に支持されている露光方法。 - 前記液体供給口および前記液体回収口は、前記基板の表面が対向可能に前記流路形成部材に設けられている請求項1〜7のいずれか一項記載の露光方法。
- 投影光学系の終端部の光学素子を囲むように配置された流路形成部材の下方に基板を配置することと、
前記流路形成部材に設けられた液体供給口からの液体供給と前記流路形成部材に設けられた液体回収口からの液体回収とを行いつつ、前記基板の表面の一部に液浸領域を形成することと、
前記基板の表面の一部に形成された前記液浸領域の液体と前記投影光学系とを介して前記基板を露光することと、を含み、
前記流路形成部材には、前記光学素子の先端部を内部に配置可能な穴部が形成されており、前記穴部に配置された前記光学素子は、前記光学素子の側面と前記流路形成部材の内側面との間に形成される微小間隙よりも上方で支持部材に支持され、
前記液体供給口と前記液体回収口は、前記基板の表面が対向可能に前記流路形成部材に設けられている露光方法。 - 前記流路形成部材の流路には、バッファ空間が形成され、
前記液体供給口への液体供給は、前記バッファ空間を介して行われる請求項1〜8のいずれか一項記載の露光方法。 - 前記基板の露光は、前記基板を走査方向に移動しながら、前記光学素子と前記基板との間の液体を介して、前記基板に露光光を照射することを含む請求項1〜10のいずれか一項記載の露光方法。
- 前記基板の周縁近傍を露光するときに、前記基板の周囲に設けられた、前記基板の表面
とほぼ同じ高さの平面を使って前記投影光学系の下に液体を保持する請求項1〜11のいずれか一項記載の露光方法。 - 請求項1〜12のいずれか一項に記載の露光方法を用いて基板を露光することを含むデバイス製造方法。
- 前記基板は、半導体ウエハを含む請求項13記載のデバイス製造方法。
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JP2009013528A Expired - Fee Related JP4786724B2 (ja) | 2003-07-09 | 2009-01-23 | 露光装置、液体回収装置、露光方法、及びデバイス製造方法 |
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JP2013226196A Expired - Fee Related JP5770814B2 (ja) | 2003-07-09 | 2013-10-31 | 露光装置、及びデバイス製造方法 |
JP2013257535A Expired - Fee Related JP5937054B2 (ja) | 2003-07-09 | 2013-12-13 | 露光装置、及びデバイス製造方法 |
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